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    POWER OSCILLATOR Search Results

    POWER OSCILLATOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER OSCILLATOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE900474-13

    Abstract: NE900474-15 NE9004 NE900400G NE900 NE9002 AN-1001 NE9000 NE9001 UM1000
    Text: NE9004 SERIES Ku-BAND POWER GaAs MESFET FEATURES • DESCRIPTION NE900474-13, -15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER 35 The NE9004 is a 0.5 micron recessed gate GaAs power FET for commercial and space amplifier and oscillator applications to 20 GHz. This device is part of the NE900 series of KuBand power transistors which includes the NE9000, NE9001


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    PDF NE9004 NE900474-13, NE9004 NE900 NE9000, NE9001 NE9002. 24-Hour NE900474-13 NE900474-15 NE900400G NE9002 AN-1001 NE9000 NE9001 UM1000

    Untitled

    Abstract: No abstract text available
    Text: 19-2075; Rev 1; 7/02 Integrated Cellular RF-Section Power-Management IC The first LDO is intended to power the transmitter, receiver, and synthesizer. The second LDO is intended to power the TCXO, and high-power voltage-controlled oscillators VCOs . The third LDO is intended to power


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    PDF MAX8890 referen8890

    5 PIN AAAK IC

    Abstract: MAX8890EGCMMM MAX8890 MAX8890EGCAAA MAX8890EGCAKM MAX8890EGCDDD MAX8890EGCGGG
    Text: 19-2075; Rev 0; 7/01 Integrated Cellular RF-Section Power-Management IC The first LDO is intended to power the transmitter, receiver, and synthesizer. The second LDO is intended to power the TCXO, and high-power voltage-controlled oscillators VCOs . The third LDO is intended to power


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    PDF 100mA MAX8890 5 PIN AAAK IC MAX8890EGCMMM MAX8890 MAX8890EGCAAA MAX8890EGCAKM MAX8890EGCDDD MAX8890EGCGGG

    "Power Management IC"

    Abstract: MAX8890 MAX8890EGCAAA MAX8890EGCAKM MAX8890EGCDDD MAX8890EGCGGG MAX8890EGCMMM 5 PIN AAAK IC
    Text: 19-2075; Rev 0; 7/01 Integrated Cellular RF-Section Power-Management IC The first LDO is intended to power the transmitter, receiver, and synthesizer. The second LDO is intended to power the TCXO, and high-power voltage-controlled oscillators VCOs . The third LDO is intended to power


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    PDF 100mA MAX8890 "Power Management IC" MAX8890 MAX8890EGCAAA MAX8890EGCAKM MAX8890EGCDDD MAX8890EGCGGG MAX8890EGCMMM 5 PIN AAAK IC

    S93421E

    Abstract: No abstract text available
    Text: Return To Product Page BURLE Power Tubes BURLE Types S93421E & S93421EM1 The BURLE S93421E and S93421EM1 are compact, liquid-cooled, beam power tetrodes designed for broadband distributed amplifier service as well as for use as RF power amplifiers, oscillators, regulators, or linear power


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    PDF S93421E S93421EM1 S93421E S93421EM1

    chip 8-pin TL431

    Abstract: TC96C555COA TC96C555CPA TC96C555EOA TC96C555EPA TC96C555MJA power oscillator
    Text: 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR TC96C555 TC96C555 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC96C555 Power Oscillator is an easily programmed IC that can be used in simple switch-mode power supplies, diode doublers and inverters, and similar circuits where


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    PDF TC96C555 TC96C555 TC4423/4/5 25nsec 800pF. chip 8-pin TL431 TC96C555COA TC96C555CPA TC96C555EOA TC96C555EPA TC96C555MJA power oscillator

    st7538

    Abstract: 72kHz
    Text: EVALST7538DUAL Power line transceiver using ST7538 Data Brief General description The EVALST7538DUAL board integrates the ST7538 power line transceiver along with the power supply section, the signal coupling interface section, crystal oscillator and device


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    PDF EVALST7538DUAL ST7538 EVALST7538DUAL ST7538 72kHz 86kHz

    TH54

    Abstract: high power Triode for dielectric heating
    Text: Svetlana TH5-4 Industrial Power Triode T he SvetlanaTM TH5-4 is a high performance ceramic/metal power triode designed for use in industrial and commercial service. The principal use is as a Class C high power oscillator for dielectric heating equipment. In many applications, the plate power supply may be completely unfiltered.


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    PDF 3CX10 000A7/8160 800-5-SVETLANA TH54 high power Triode for dielectric heating

    TH5-6

    Abstract: No abstract text available
    Text: Svetlana TH5-6 Industrial Power Triode T he SvetlanaTM TH5-6 is a high performance ceramic/metal power triode designed for use in industrial and commercial service. The principal use is as a Class C high power oscillator for dielectric heating equipment. In many applications, the plate power supply may be completely unfiltered.


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    PDF 3CX10 000A7/8160 800-5-SVETLANA TH5-6

    80C535

    Abstract: 80535 application note 80C515 80515 timer 2 application 80535
    Text: On-Chip Peripheral Components Figure 7-42 Capture with Registers CC1 to CC3 7.6 Power Saving Modes For significantly reducing power consumption, the SAB 80 C 515/80(C)535 provides two Power Saving Modes: – The Power-Down Mode Operation of the component stops completely, the oscillator is turned off. Only the internal


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    PDF 80C515/80C535 80C515/80C535 80C535 80535 application note 80C515 80515 timer 2 application 80535

    4Mhz cryStal oscillator

    Abstract: DS89C450 D1024 DS5230 DS5250 DS80C400 DS87C520 DS87C530 DS89C430
    Text: Maxim > App Notes > MICROCONTROLLERS Keywords: high-speed microcontrollers, DS5230, DS5250, DS87C520, DS87C530, DS89C430, DS89C450, power management, power consumption, battery-powered, stop mode, idle mode, pmm, crystal oscillator, band-gap reference, ring oscillator, power control bit, PCON, timers


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    PDF DS5230, DS5250, DS87C520, DS87C530, DS89C430, DS89C450, DS80C400 DS5250 4Mhz cryStal oscillator DS89C450 D1024 DS5230 DS87C520 DS87C530 DS89C430

    "Power Tube"

    Abstract: Absolute Value Circuit circuit diagram of door interlock system rf triode diagrams thyratron 400 watts amplifier circuit diagram 300 watts amplifier circuit diagram simple 20 watts power amplifier "RF Power Amplifiers" 1500 watt audio amplifier circuit diagram
    Text: NEXT PAGE PRINT PAGE RETURN TO MENU 8072 Power Tube r VHF Linear Amplifier Tube - Coaxial-Electrode Structure - Ceramic-Metal Seals - Full Input to 500 MHz - Conduction Cooled The BURLE 8072 is a small, conduction cooled beam power tube designed for use as an RF power amplifier, oscillator, regulator, distributed amplifier, or linear RF power amplifier in mobile


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    PDF

    triode metal ceramic power

    Abstract: high power Triode for dielectric heating
    Text: SVETLANA TECHNICAL DATA Svetlana NL1096 Industrial Power Triode T he SvetlanaTM NL1096 is a high performance ceramic/metal power triode designed for use in industrial service. Typical use is as a Class C high power oscillator for dielectric heating equipment.


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    PDF NL1096 NL1096 Operati200 triode metal ceramic power high power Triode for dielectric heating

    Philips Semiconductors Selection Guide

    Abstract: LTE42005S BLS2731-10
    Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR


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    PDF RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S

    2N5177

    Abstract: No abstract text available
    Text: GAE GREAT AMERICAN ELECTROINCS 2N5177 Silicon NPN high power UHF transistor 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . Output Power: Frequency Range: Voltage: Package Type:


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    PDF 2N5177 FO-85 0QD0D05

    2N5178

    Abstract: 40w electronic ballast 20W power transistor
    Text: GAE GREAT AMERICAN ELECTROINCS 2N5178 Silicon NPN high power UHF transistor 2N5178 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . Output Power: Frequency Range: Voltage: Package Type:


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    PDF 2N5178 2N5178 FO-85 40w electronic ballast 20W power transistor

    2n5643

    Abstract: MT-72 MT-72 package
    Text: GAE GREAT AMERICAN ELECTROINCS 2N5643 Silicon NPN power VHF transistor 2N5643 is designed for FM or AM power amplifiers, frequency multiplier or oscillator applications in communications equipment Mobile and Aircraft . Output Power: Frequency Range: Voltage:


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    PDF 2N5643 2N5643 MT-72 MT-72 MT-72 package

    2N5642

    Abstract: MT-72
    Text: GAE GREAT AMERICAN ELECTROINCS 2N5642 Silicon NPN power VHF transistor 2N5642 is designed for FM or AM power amplifiers, frequency multiplier or oscillator applications in communications equipment Mobile and Aircraft . Output Power: Frequency Range: Voltage:


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    PDF 2N5642 2N5642 MT-72 MT-72

    2N5177

    Abstract: N10W TI 511 transistor
    Text: GAE GREAT AMERICAN ELECTROINCS 2N5177 Silicon NPN high power UHF transistor 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . Output Power: Frequency Range: Voltage: Package Type:


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    PDF 2N5177 2N5177 FO-85 0QD0D05 N10W TI 511 transistor

    Untitled

    Abstract: No abstract text available
    Text: ' Semiconductor, Inc. 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC96C555 Power Oscillator is an easily pro­ grammed IC that can be used in simple switch-mode power


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    PDF TC96C55 1800pF 20nsec TC96C555 25-5k TC96C555

    2N5178

    Abstract: No abstract text available
    Text: GAE GREAT AMERICAN ELECTROINCS 2N5178 Silicon NPN high power UHF transistor 2N5178 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . Output Power: Frequency Range: Voltage: Package Type:


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    PDF 2N5178 2N5178 FO-85

    2N5177

    Abstract: No abstract text available
    Text: SGI Silicon Group Inc. 2N5177 Silicon NPN high power UHF transistor 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . ^Output power: 20 watt (typ) 100 - 500 MHz Frequency range:


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    PDF 2N5177 2N5177

    2n3733

    Abstract: "vhf,uhf transistor" 4 watt VHF 100-400MHz
    Text: GAE GREAT AMERICAN ELECTROINCS 2N3733 Silicon NPN high power VHF/UHF transistor 2N3733 is intended for class “C” amplifier, auto-oscillator or frequency multiplier circuits in the 100-400 Mhz region. Output Power: Output Power: Frequency Range: Voltage:


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    PDF 2N3733 2N3733 400Mhz) 150Mhz) "vhf,uhf transistor" 4 watt VHF 100-400MHz

    Untitled

    Abstract: No abstract text available
    Text: ~ Semiconductor, Inc. TC96C555 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ TheTC96C555 Power Oscillator is an easily programmed IC that can be used in simple switch-mode power supplies, diode doublers and Inverters, and similar circuits where


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    PDF TC96C555 1800pF 150ns TheTC96C555 TC96C555