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    POWER MOSFET J 162 Search Results

    POWER MOSFET J 162 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET J 162 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20n60s1

    Abstract: 60v 10a p type mosfet 20n60s
    Text: / FMP20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] 2.7 ±0.1 ±0 .2 6.4 ±0.2 φ3 .6 3.6 ±0.2 Applications UPS Server Telecom Power conditioner system


    Original     		PDF FMP20N60S1 O-220 O-220AB 20n60s1 60v 10a p type mosfet 20n60s

    20N60S1

    Abstract: Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S
    Text: / FMV20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]


    Original     		PDF FMV20N60S1 O-220F 20N60S1 Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S

    FMW20N60S1

    Abstract: 20n60s1 20n60s mosfet 600V 20A FMW20N60S1HF
    Text: / FMW20N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]


    Original     		PDF FMW20N60S1HF O-247-P2 FMW20N60S1 20n60s1 20n60s mosfet 600V 20A FMW20N60S1HF

    20N60S1

    Abstract: FMH20N60S1 600V 20A N-Channel MOSFET TO-3P
    Text: / FMH20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] φ3.2± 0.1 5±0.1 1.5±0.2 4.5±0.2 Drain D 3 ±0.2 1.5 Applications 15.5max 13 ± 0.2 10 ± 0.2


    Original     		PDF FMH20N60S1 20N60S1 FMH20N60S1 600V 20A N-Channel MOSFET TO-3P

    EPC-19 TRANSFORMER

    Abstract: AHB ZVS AN9506 resonant single ended forward converter HIP4081 phase shifted full-bridge ZVS dc-dc converter 74ACT86 Full-bridge series resonant converter an9325 EPC TRANSFORMER
    Text: No. AN9506 Intersil Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing


    Original     		PDF AN9506 500kHz, HIP4081A HIP4081A EPC-19 TRANSFORMER AHB ZVS AN9506 resonant single ended forward converter HIP4081 phase shifted full-bridge ZVS dc-dc converter 74ACT86 Full-bridge series resonant converter an9325 EPC TRANSFORMER

    AHB ZVS

    Abstract: EPC-19 TRANSFORMER TDK Ferrite Core PC40 500w Full bridge transformer AN9506 HIP4081 pwm controller 10Turns Design of Isolated Converters Using Simple Switch HIP4081 single phase bridge fully controlled rectifier
    Text: No. AN9506 Intersil Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing


    Original     		PDF AN9506 500kHz, HIP4081A HIP4081A AHB ZVS EPC-19 TRANSFORMER TDK Ferrite Core PC40 500w Full bridge transformer AN9506 HIP4081 pwm controller 10Turns Design of Isolated Converters Using Simple Switch HIP4081 single phase bridge fully controlled rectifier

    EPC-19 TRANSFORMER

    Abstract: AN9506 an9325 BAE-030D 500w Full bridge transformer ZVS phase-shift converters AHB ZVS 1/3 phase bridge fully controlled rectifier TDK Ferrite Core PC40 500W dc/dc converter pwm
    Text: Harris Semiconductor No. AN9506 Harris Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing


    Original     		PDF AN9506 500kHz, HIP4081A HIP4081A EPC-19 TRANSFORMER AN9506 an9325 BAE-030D 500w Full bridge transformer ZVS phase-shift converters AHB ZVS 1/3 phase bridge fully controlled rectifier TDK Ferrite Core PC40 500W dc/dc converter pwm

    lv 5682

    Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
    Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically


    OCR Scan     		PDF RD60HUF1 RD60HUF1 lv 5682 mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 MOSFET, 3077 transistor k 2837

    Untitled

    Abstract: No abstract text available
    Text: IRFP440 A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFP440

    HA1190

    Abstract: No abstract text available
    Text: IRFP440A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFP440A HA1190

    C1413

    Abstract: T039 package
    Text: Aß N -C h an n e l RF Power MOSFET UF2801K1 1 Watt, 100-500 MHz, 28 V Features • • • • • lD j DMOS Structure Lower Capacitances for Broadband Operation Lower Noise Floor 100 MHz to 500 MHz Operation Common Source T039 Package Configuration Absolute Maximum Ratings at 25°C


    OCR Scan     		PDF UF2801K1 C1413 T039 package

    Untitled

    Abstract: No abstract text available
    Text: IRF340 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRF340

    Untitled

    Abstract: No abstract text available
    Text: IRFP340A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFP340A

    Untitled

    Abstract: No abstract text available
    Text: s e MIKRDn Absolute Maximum Ratings Symbol V rrm Ifsm l2t Tsolder Tvj, T stg Tvj, Tstg Conditions ' Values Units 1200 V 180 162 375 -5 5 + 150 A A^s °C SEMICELL CAL - Diode Chips3 SKCD 18C 120 I > 2 bondwires 300 nm 0 ) tp = 10 ms; sin; T j = 150 °C tp = 10 ms; sin; T j = 150 °C


    OCR Scan     		PDF C/125 CD018205 00Db7E4

    Untitled

    Abstract: No abstract text available
    Text: IRFW/I630A FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0.4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V ■ Low RDS(ON) : 0.333 £l(Typ.) II


    OCR Scan     		PDF IRFW/I630A Fig15.

    547 MOSFET

    Abstract: *c1251c
    Text: SSP1N50A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss ” 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jjA Max. @ VOS= 500V


    OCR Scan     		PDF SSP1N50A 547 MOSFET *c1251c

    Untitled

    Abstract: No abstract text available
    Text: IRFW/I630A Advanced Power MOSFET FEATURES BV DSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n - ■ Lower Input Capacitance In = 9 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V


    OCR Scan     		PDF IRFW/I630A 30rmal

    Untitled

    Abstract: No abstract text available
    Text: IRFW/I630A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |uA Max. @ VDS = 200V


    OCR Scan     		PDF IRFW/I630A BRFW/I630A

    VM-50V

    Abstract: No abstract text available
    Text: IRFR/U320A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |JA Max. @ VOS= 400V


    OCR Scan     		PDF IRFR/U320A VM-50V

    Lm 4046

    Abstract: No abstract text available
    Text: SSS1N50A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 ¿¿A Max. @ Lower R,DS{ON) 4.046 a (Typ.)


    OCR Scan     		PDF SSS1N50A O-220F Lm 4046

    d2p03

    Abstract: No abstract text available
    Text: M O T O R O LA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MM DF2P03HD Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors M otorola Preferred Device MiniMOS™ devices are an advanced series of power MOSFETs w hich utilize M otorola’s High Cell D ensity H D TM O S process.


    OCR Scan     		PDF DF2P03HD DF2P03HD d2p03

    B1470

    Abstract: K775 mitsubishi MOSFET F3005 FS20KM5 FS20KM-5 MAX240 MITSUBISHI MOSFET FS
    Text: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 1 0 ± 0 .3 • V d s s . 2 .8 ± 0 . 2 250V • rDS ON (MAX) . 0 .1 9 Q


    OCR Scan     		PDF FS20KM-5 -220FN T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S B1470 K775 mitsubishi MOSFET F3005 FS20KM5 FS20KM-5 MAX240 MITSUBISHI MOSFET FS

    B1470

    Abstract: FS20KM-5 K775 M-1510 MAX240 FS 8201 mitsubishi fs20km-5
    Text: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 • V dss . 2.8 ± 0 .2 250V • rDS ON (MAX) . 0 .1 9Q • Id


    OCR Scan     		PDF FS20KM-5 -220FN MAX240Â MAX60S O-22Q, O-220FN, O-220C, O-220S B1470 FS20KM-5 K775 M-1510 MAX240 FS 8201 mitsubishi fs20km-5

    mosfet 4842

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA D esigner's Data Sheet MTP23P06V TMOSV™ Power Field Effect Transistor Motorola Preferred D*vlca P-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about on e-ha lf that of standard MOSFETs. This


    OCR Scan     		PDF MTP23P06V 0E-05 0E-04 0E-03 0E-02 0E-01 mosfet 4842