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    POWER MOSFET 220 V 15 A Search Results

    POWER MOSFET 220 V 15 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK421G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET 220 V 15 A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STP14NF10FP

    Abstract: STB14NF10 STP14NF10
    Text: STB14NF10 STP14NF10 STP14NF10FP N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STB14NF10 STP14NF10 STP14NF10FP • ■ ■ ■ ■ VDSS RDS on ID 100 V 100 V 100 V <0.13 Ω <0.13 Ω <0.13 Ω 15 A


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    STB14NF10 STP14NF10 STP14NF10FP O-220/TO-220FP/D2PAK STP14NF10 O-263) O-263 O-220FP STP14NF10FP STB14NF10 PDF

    Untitled

    Abstract: No abstract text available
    Text: STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB Order code VDSS @ TJmax RDS on max ID 3 STF18N65M5 STI18N65M5


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    STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 O-220FP, O-220 O-247 STF18N65M5 STI18N65M5 STP18N65M5 PDF

    IRF750A

    Abstract: No abstract text available
    Text: IRF750A Advanced Power MOSFET FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology RDS on = 0.3 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 400V


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    IRF750A O-220 IRF750A PDF

    Untitled

    Abstract: No abstract text available
    Text: KSM3N80 800V N-Channel MOSFET TO-220 Features • • • • • • 3.0A, 800V, RDS on = 5.0Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 7.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description These N-Channel enhancement mode power field effect


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    KSM3N80 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSM4N60 600V N-Channel MOSFET TO-220 Features • • • • • • 4.4A, 600V, RDS on = 2.2Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 8.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description These N-Channel enhancement mode power field effect


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    KSM4N60 O-220 PDF

    orega transformer SMT4

    Abstract: MC44603P THOMSON B2 ferrite material orega flyback transformers orega flyback transformer MC44603 E-4215A orega transformer OREGA smt4 SMT4 former
    Text: MOTOROLA Order this document by AN1669/D SEMICONDUCTOR APPLICATION NOTE AN1669 MC44603 in a 110 W Output SMPS Application 80-140 Vrms and 180-280 Vrms Mains Voltages by Joël Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France


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    AN1669/D AN1669 MC44603 MC44603. orega transformer SMT4 MC44603P THOMSON B2 ferrite material orega flyback transformers orega flyback transformer E-4215A orega transformer OREGA smt4 SMT4 former PDF

    pin details of str f6654

    Abstract: f6656 f6654 STR-S5707 STR-S5707 applications STR F6656 STR-S5707 STR-S5708 GK-002-1A F6653 Quasi-resonant flyback transformer
    Text: Data Sheet 28114A STR-S5707 AND STR-S5708 OFF-LINE SWITCHING REGULATORS – WITH BIPOLAR SWITCHING TRANSISTOR COLLECTOR 1 COMMON 2 BASE 3 SINK 4 OVER-CURRENT PROTECTION 5 INHIBIT 6 32 V SENSE 7 DRIVE 8 V IN 9 The STR-S5707 and STR-S5708 are specifically designed to meet


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    8114A STR-S5707 STR-S5708 STR-S5708 8033S 8050S 8090S 2-40V 8120S pin details of str f6654 f6656 f6654 STR-S5707 applications STR F6656 STR-S5707 STR-S5708 GK-002-1A F6653 Quasi-resonant flyback transformer PDF

    f6654

    Abstract: F6653 STR-S6707 f6656 F6626 s6707 8120S Quasi-resonant flyback transformer quasi resonant STR F6654
    Text: OFF-LINE SWITCHING REGULATORS – WITH BIPOLAR SWITCHING TRANSISTOR COLLECTOR 1 COMMON 2 BASE 3 SINK 4 DRIVE 5 OVER-CURRENT PROTECTION 6 FDBK 7 INHIBIT 8 V IN 9 The STR-S6703 and STR-S6704 are specifically designed to meet the requirement for increased integration and reliability in off-line quasiresonant flyback converters. These devices incorporate the primary


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    STR-S6703 STR-S6704 8033S 8050S 8090S 2-40V 8120S 8150S f6654 F6653 STR-S6707 f6656 F6626 s6707 8120S Quasi-resonant flyback transformer quasi resonant STR F6654 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-FC220SA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 220 A FEATURES • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche SOA


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    VS-FC220SA20 OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-FC220SA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 220 A FEATURES • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche SOA


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    VS-FC220SA20 OT-227 E78996 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    z24 mosfet

    Abstract: No abstract text available
    Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


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    AGR09180EF Hz--895 DS04-123RFPP DS04-031RFPP) z24 mosfet PDF

    7805 sot23

    Abstract: LDO 7805 7805 sot 82 7805 LDO 7805 SOT-23 linear regulator 7805 7805 so8 sw 7805 7805 to 92 MC78L05AC
    Text: SiDB766707 Vishay Siliconix SiC714CD10 MOSFET Plus Driver Evaluation Board FEATURES • MOSFET Plus Driver PowerPAK MLF 10 x 10 Product Demonstration • 10 V to 14 V Input Voltage • Switching Frequency: 100 kHz to > 1 MHz • Up to 27 A Output Current


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    SiDB766707 SiC714CD10 TL5001) 17-Mar-06 7805 sot23 LDO 7805 7805 sot 82 7805 LDO 7805 SOT-23 linear regulator 7805 7805 so8 sw 7805 7805 to 92 MC78L05AC PDF

    NCP1450ASN50T1

    Abstract: 27T1 bjt ce amplifier JESD22-A114 JESD22-A115 JESD78 NCP1450A NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1
    Text: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step-up DC-DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


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    NCP1450A NCP1450A NCP1450A/D NCP1450ASN50T1 27T1 bjt ce amplifier JESD22-A114 JESD22-A115 JESD78 NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1 PDF

    5 pin IC marking DAZ

    Abstract: NCP1450ASN50T1 bjt 100 A114 A115 JESD22 NCP1450A NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1
    Text: NCP1450A PWM Step-up DC-DC Controller The NCP1450A series are PWM step–up DC–DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


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    NCP1450A NCP1450A r14525 NCP1450A/D 5 pin IC marking DAZ NCP1450ASN50T1 bjt 100 A114 A115 JESD22 NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1 PDF

    IRF750

    Abstract: No abstract text available
    Text: IRF750 A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


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    IRF750 O-220 IRF750 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF750A A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


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    IRF750A O-220 PDF

    STR-S6707 circuit diagram

    Abstract: F6654 strs6707 Quasi Resonant Converter flyback S5708 f6656 F6653 STR-S6703 FLYBACK APPLICATION NOTES STR-S6707 thru STR-S6709
    Text: OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR The STR-S6703 and STR-S6704 are specifically designed to meet the requirement for increased integration and reliability in off-line quasi­ resonant flyback converters. These devices incorporate the primary


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    STR-S6703 STR-S6704 STR-S6704 STR-S6707 circuit diagram F6654 strs6707 Quasi Resonant Converter flyback S5708 f6656 F6653 FLYBACK APPLICATION NOTES STR-S6707 thru STR-S6709 PDF

    STR-S6707 circuit diagram

    Abstract: STR-S6708 STRs6707 STR-S6707 STRS6708 STR-S6707 thru STR-S6709
    Text: Data Sheet 28113* STR-S6707 t h r u STR-S6709 OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR The STR-S6707, STR-S6708, and STR-S6709 are specifically designed to meet the requirement for increased integration and reliabil­ ity in off-line quasi-resonant flyback converters. These devices incorpo­


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    STR-S6707 STR-S6709 STR-S6707, STR-S6708, STR-S6709 STR-S6707 circuit diagram STR-S6708 STRs6707 STRS6708 STR-S6707 thru STR-S6709 PDF

    STR-S5707 STR-S5708

    Abstract: flyback transformer diagram STR-S5707 applications STR-S5707 flyback transformer pin configuration STRS5708 Flyback transformer ratings strs5707 flyback transformer data pin diagram Quasi Resonant Converter flyback
    Text: OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR The STR-S5707 and STR-S5708 are specifically designed to meet the requirement for increased integration and reliability in off-line quasi­ resonant flyback converters with indirect feedback. Each device


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    STR-S5707 STR-S5708 8114A STR-S5708 thermal00/120 110/120V 2-40V STR-S5707 STR-S5708 flyback transformer diagram STR-S5707 applications flyback transformer pin configuration STRS5708 Flyback transformer ratings strs5707 flyback transformer data pin diagram Quasi Resonant Converter flyback PDF

    Flyback transformer design and ratings

    Abstract: flyback transformer pin configuration Flyback transformer ratings STRS5708 Quasi-resonant flyback transformer 8050S REGULATOR F6628 f6654
    Text: OFF-LINE SWITCHING REGULATOR - WITH BIPOLAR SWITCHING TRANSISTOR The STR-S5703 is specifically designed to meet the requirement for increased integration and reliability in off-line quasi-resonant flyback converters with indirect feedback. The device incorporates the primary


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    STR-S5703 STR-S5703 Flyback transformer design and ratings flyback transformer pin configuration Flyback transformer ratings STRS5708 Quasi-resonant flyback transformer 8050S REGULATOR F6628 f6654 PDF

    F6653

    Abstract: f6654 f6656 S6709 F6628 F6676 S5708 s6707 8120S GK-005
    Text: Data Sheet 28101.1 STR-S6411 AND STR-S6411F OFF-LINE SWITCHING REGULATORS - WITH POWER MOSFET OUTPUT r pw m j T~ SOFT , START ’ , OVER-CURRENT PROTECTION ' UVLO - — REF. - 1 SIGNAL / GROUND ' FDBK \ These devices are specifically designed to meet the requirements


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    STR-S6411 STR-S6411F STR-S6411) STR-S6411F) STR-S6411F 110/120V 2-40V F6653 f6654 f6656 S6709 F6628 F6676 S5708 s6707 8120S GK-005 PDF

    LD 33 regulator

    Abstract: flyback transformer design for mosFET flyback equivalent N and P MOSFET
    Text: OFF-LINE SWITCHING REGULATOR - WITH POWER MOSFET OUTPUT The STR-S6525 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in a constant OFF-time mode. The device incorporates the


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    STR-S6525 STR-S6525 LD 33 regulator flyback transformer design for mosFET flyback equivalent N and P MOSFET PDF

    f6656

    Abstract: F6653 S6709 f6654 s6708 F6624 STRS6401 f6626 f6628
    Text: OFF-LINE SWITCHING REGULATORS - WITH POWER MOSFET OUTPUT r These devices are specifically designed to meet the requirements for increased integration and reliability in off-line flyback STR-S6401 and forward (STR-S6401F) converters operating in a fixed-frequency


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    STR-S6401 STR-S6401F STR-S6401) STR-S6401F) STR-S6401F 220/240V 110/120V 2-40V f6656 F6653 S6709 f6654 s6708 F6624 STRS6401 f6626 f6628 PDF

    Untitled

    Abstract: No abstract text available
    Text: TD230 ELECTRONIC CIRCUIT BREAKER . TWO N-CHANNEL MOSFETs CONTROL AND DUAL INDEPENDANT CURRENT SUPERVI­ SION FOR OVER CURRENT PROTECTION . DUAL SUPPLY OPERATION . FROM +3/-5 TO +18/-18V OPERATING VOLT­ AGE . STEP-UPCONVERTER : Vcc +13.5VOUTPUT VOLTAGE . ADJUSTABLE PROTECTION MODE


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    TD230 18/-18V TD230 PDF