Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    POWER MOS FET MANUAL Search Results

    POWER MOS FET MANUAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOS FET MANUAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pa1556ah

    Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
    Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET


    Original     		PDF O-251/-252, O-220/-262 SC-96 SC-95 SC-96 OT-23) D10702EJAV0PF00 pa1556ah PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326

    G1563

    Abstract: D1563 2SK1658 C10535E VP15-00-3 NEC MARKING surface TC236
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING Unit : mm driven by 2.5 V power supply. 2.1 ±0.1 1.25 ±0.1 As the MOS FET is low Gate Leakage Current, it is suitable for appliances


    Original     		PDF 2SK1658 2SK1658 G1563 D1563 C10535E VP15-00-3 NEC MARKING surface TC236

    PA1552BH

    Abstract: PA1552 IEI-1213 MEI-1202 MF-1134 PA155
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1552B is N-channel Power MOS FET Array in millimeters that built in 4 circuits designed, for solenoid, motor and


    Original     		PDF PA1552B PA1552B PA1552BH PA1552BH PA1552 IEI-1213 MEI-1202 MF-1134 PA155

    52n06

    Abstract: NP52N06SLG np52n06slg-e1-ay NP52 NP52N06S
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP52N06SLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP52N06SLG is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE NP52N06SLG-E1-AY


    Original     		PDF NP52N06SLG NP52N06SLG NP52N06SLG-E1-AY O-252 NP52N06SLG-E2-AY O-252) 52n06 np52n06slg-e1-ay NP52 NP52N06S

    pa1520

    Abstract: PA1520BH IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET Compound Field Effect Power Transistor µPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The µPA1520B is N-channel Power MOS FET Array that PACKAGE DIMENSIONS built in 4 circuits designed for solenoid, motor and lamp in millimeters


    Original     		PDF PA1520B PA1520B PA1520BH pa1520 PA1520BH IEI-1213 MEI-1202 MF-1134

    PA1572

    Abstract: C10535E C10943X MEI-1202 PT2320 PA1572BH
    Text: DATA SHEET Compound Field Effect Power Transistor µPA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and


    Original     		PDF PA1572B PA1572B PA1572BH 10Pin PA1572 C10535E C10943X MEI-1202 PT2320 PA1572BH

    G1133

    Abstract: C10535E C10943X MEI-1202 6 PIN case mos fet p-channel uPA1523BH
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1523B P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The µPA1523B is P-channel Power MOS FET Array that built PACKAGE DIMENSIONS in millimeters in 4 circuits designed for solenoid, motor and lamp driver.


    Original     		PDF PA1523B PA1523B PA1523BH G1133 C10535E C10943X MEI-1202 6 PIN case mos fet p-channel uPA1523BH

    PA1523BH

    Abstract: TEA-1037 C10535E C10943X MEI-1202 TEA-1035
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR mPA1523B P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The mPA1523B is P-channel Power MOS FET Array that built PACKAGE DIMENSIONS in millimeters in 4 circuits designed for solenoid, motor and lamp driver.


    Original     		PDF PA1523B PA1523B PA1523BH TEA-1037 C10535E C10943X MEI-1202 TEA-1035

    G10597

    Abstract: pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059 PA1500B
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver.


    Original     		PDF PA1500B PA1500B G10597 pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059

    2sk4075

    Abstract: TRANSISTOR K4075 k4075 2sK4075 TRANSISTOR 2SK4075-ZK k407
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4075-ZK-E1-AY Pure Sn Tin


    Original     		PDF 2SK4075 2SK4075 2SK4075-ZK-E1-AY 2SK4075-ZK-E2-AY O-252 O-252) TRANSISTOR K4075 k4075 2sK4075 TRANSISTOR 2SK4075-ZK k407

    K4076

    Abstract: 2SK4076 LOT CODE NEC 2SK407 2SK4076-ZK
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4076 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4076 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4076-ZK-E1-AY Pure Sn Tin


    Original     		PDF 2SK4076 2SK4076 2SK4076-ZK-E1-AY O-252 2SK4076-ZK-E2-AY O-252) K4076 LOT CODE NEC 2SK407 2SK4076-ZK

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2338 LC05111CMT Advance Information http://onsemi.com CMOS LSI 1-Cell Lithium-Ion Battery Protection IC with integrated Power MOS FET Overview The LC05111CMT is a protection IC for 1-cell lithium-ion secondary batteries with integrated power MOS FET.


    Original     		PDF A2338 LC05111CMT LC05111CMT A2338-17/17

    k4075

    Abstract: 2SK4075 TRANSISTOR K4075 2sK4075 TRANSISTOR 2sk*4075 2SK4075-ZK-E1-AY 2SK4075-ZK-E2-AY 2SK4075-ZK NEC Date code Marking 2SK40
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING 2SK4075-ZK-E1-AY Pure Sn Tin 2SK4075-ZK-E2-AY


    Original     		PDF 2SK4075 2SK4075 2SK4075-ZK-E1-AY O-252 2SK4075-ZK-E2-AY O-252) k4075 TRANSISTOR K4075 2sK4075 TRANSISTOR 2sk*4075 2SK4075-ZK-E1-AY 2SK4075-ZK-E2-AY 2SK4075-ZK NEC Date code Marking 2SK40

    G3VM-601G

    Abstract: Omron
    Text: G3VM-601G MOS FET Relays Ultrasensitive MOS FET Relays in 600-V Load series for electric power saving. • Trigger LED forward current of 1 mA maximum facilitates power saving designs and prolonged battery life. • Continuous load current of 90 mA. RoHS compliant


    Original     		PDF G3VM-601G K171-E1-01 G3VM-601G Omron

    2SK1583

    Abstract: IEI-1213 MEI-1202 TC-2297B
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1583 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK1583 is an N-channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con­


    OCR Scan     		PDF 2SK1583 IEI-1213 MEI-1202 TC-2297B

    TC-2329A

    Abstract: F16V 2SJ207 IEI-1213 iei-1209
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHAIMNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con­


    OCR Scan     		PDF 2SJ207 2SJ207, TC-2329A F16V 2SJ207 IEI-1213 iei-1209

    2SJ202

    Abstract: 2SK1580 T100 T200
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ202 P-CHANNEL MOS FET FOR SWITCHING The 2SJ202 is an P-channel vertical type MOS FET w hich can be OUTLINE DIMENSIONS Unit : mm driven by 2.5 V power supply. 2.1 ± 0.1 As the MOS FET is driven by low voltage and does n o t require con­


    OCR Scan     		PDF 2SJ202 2SK1580 T100 T200

    T500 I2 60 05 AT

    Abstract: 2SJ212 T500 7748b IEI-1209
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ212 P-CHANNEL MOS FET FOR S W IT C H IN G The 2SJ212, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching


    OCR Scan     		PDF 2SJ212 2SJ212, T500 I2 60 05 AT 2SJ212 T500 7748b IEI-1209

    2SJ207

    Abstract: IEI-1213
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHANNEL MOS FET FOR SWITCHING The 2SJ207, P-channel vertical type MOS FET, is a switching device PACKAGE DIM ENSIONS U n it: mm which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con­


    OCR Scan     		PDF 2SJ207 2SJ207, IEI-1213

    UPA1500

    Abstract: IC-3326 DIODE u5 TEA-1037 IEI-1213 MEI-1202 MF-1134 IPA1500H fet 9411
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR »PA1500 N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The /iP A1500 is N-channel Power MOS FET Array in millimeters that built in 4 circuits and surge absorber designed for solenoid, m otor and lamp driver.


    OCR Scan     		PDF uPA1500 /IPA1500H 12-Pin IC-3326 DIODE u5 TEA-1037 IEI-1213 MEI-1202 MF-1134 IPA1500H fet 9411

    IEI-1207

    Abstract: PA1602 IC-3370 iso 1207 16PIN IC 3370
    Text: DATA SHEET NEC COMPOUND äm m mFIELD m EFFECT POWER TRANSISTOR r „PAI 602 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The ¡iPA1602 is Monolithic N-channel Power MOS FET Array that built CONNECTION DIAGRAM in 7 circuits designed for LED, Relay, Thermal Head, and so on.


    OCR Scan     		PDF uPA1602 IEI-1207 PA1602 IC-3370 iso 1207 16PIN IC 3370

    PA1500B

    Abstract: PA1500BH
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR ju P A 1 5 0 0 B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The /¿PA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for


    OCR Scan     		PDF uPA1500B uPA1500BH PA1500B PA1500BH

    2SJ210

    Abstract: MARK H16 2SJ21 T200 T400
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOS FET FOR SWITCHING The 2SJ210, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS Unit : mm which can be driven directly by the output of ICs having a 5 V power 2.8 ± 0.2 source. 1.5


    OCR Scan     		PDF 2SJ210 2SJ210, 2SJ210 MARK H16 2SJ21 T200 T400

    IC-3328

    Abstract: *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array
    Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS The juPA1520 is N-channel Power MOS FET Array that built in 4 in millimeters circuits designed for solenoid, m otor and lamp driver. 26.8 MAX. 4.0 FEATURES • 4 V driving is possible


    OCR Scan     		PDF uPA1520 10-Pin JiPA1520H IC-3328 *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array