2SJ21 Search Results

marking PP

Abstract: 2SJ213 mosfet vgs 5v vds 100v MOSFET SMD pp
Contextual Info: MOSFET SMD Type MOS Fied Effect Transistor 2SJ213 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance RDS on =4.2 MAX.@VGS=-1.0V,ID=-0.3A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1

2SJ211

Abstract: N15j
Contextual Info: •At In MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOS FET FOR SWITCHING T he 2 S J 2 1 1 , P-channel vertical ty p e M O S F E T , is a sw itching device PACKAGE DIMENSIONS Unit : mm source. 2.8 ±0.2 1.5 w hich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V p ow er

2SJ210

Abstract: MARK H16 2SJ21 T200 T400
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOS FET FOR SWITCHING The 2SJ210, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS Unit : mm which can be driven directly by the output of ICs having a 5 V power 2.8 ± 0.2 source. 1.5

Hitachi DSA001651

Contextual Info: 2SJ218 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ215

Abstract: Hitachi DSA001651
Contextual Info: 2SJ215 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ219

Abstract: Hitachi 2SJ Hitachi DSA001651
Contextual Info: 2SJ219 L , 2SJ219(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ214

Abstract: 2sj172 2SJ214S Hitachi 2SJ Hitachi DSA001651
Contextual Info: 2SJ214 L , 2SJ214(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ218

Abstract: 2SJ217 Hitachi Scans-001
Contextual Info: 2SJ218 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

j172

Abstract: 2SJ214S 2SJ214L 2SJ214
Contextual Info: 2SJ214 L , 2SJ214(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ211

Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE _ _ _ 2SJ211 P-CHANNEL MOS FET FOR SW ITCHING The 2SJ211, P-channel vertical type MOS FET, is a s w itch ing device P A C K A G E DIMENSIONS Unit : mm w h ich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V power

Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRAN SISTO R _ 2SJ213 P-CHANNEL MOS FET FOR SW ITCHING The 2S J213, P-channel vertical type MOS FET, is a sw itch ing device PACKAGE DIMENSIONS Unit : mm w hich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V pow er

2SJ211

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 •A t I n MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOS FET FOR SWITCHING The 2SJ211, P-channel vertical type MOS F ET, is a switching device

2SJ217

Abstract: 2SJ218
Contextual Info: HITACHI 2SJ218-SILICON P-C H AN N EL MOS FET HIGH SPEED POWER SWITCHING cm •FEATURES # Low ON-Resistance # High Speed Switching # High Speed Switching # 4 V Gate Drive Device - Can be driven from 5V source l.O a ic 2. Drain # Suitable for Motor Drive, DC-DC Converter,

2SJ216

Abstract: Hitachi DSA001651
Contextual Info: 2SJ216 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device _ Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SJ215 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SJ216- 44Tb2DS OGie^bT I?«? « H i m HITACHI/ OPTOELECTRONICS hlE D SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FE A T U R E S # Low On-Resistance # High Speed Switching # Low Drive Current # 4 V Gate Drive Device - Can be driven from 5V source

2SJ213

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ213 P-CHANNEL MOS FET FOR SWITCHING The 2SJ213, P-channel vertical type MOS F ET, is a switching device

Contextual Info: 2SJ219 L , 2SJ219(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ216

Abstract: 2SJ215 Hitachi 2SJ Hitachi DSA00514
Contextual Info: 2SJ216 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SJ217 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ213

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ213 P-CHANNEL MOS FET FOR SWITCHING The 2SJ213, P-channel vertical type MOS F ET, is a switching device PACKAGE DIMENSIONS Unit : mm which can be driven directly by the o utp ut o f ICs having a 5 V power source.

h18 smd transistor

Abstract: smd marking H18 SMD Transistor h18 SOT 23 marking H18 2SJ211 mosfet vgs 5v vds 100v
Contextual Info: MOSFET SMD Type MOS Fied Effect Transistor 2SJ211 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Not necessary to consider driving current because of 1 0.55 Directly driven by Ics having a 5V poer supply. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1

2SJ212

Abstract: T500 t500 06 60 05
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ212 P-CHANNEL MOS FET FOR S W IT C H IN G The 2SJ212, P-channel vertical type MOS FET, is a switching device

WE74

Abstract: 2SJ212
Contextual Info: NEC M O S Field Effect Transistor 2SJ212 M O S FET KBm 2SJ212Ü P f- ì* -t' /l'MM MOS F E T T \ 5 V ïtï 3 U C ¿0 £H* fc i § W M m W iW ^ T tÊ * X ^ -{È • mm -f ' y f - > * M O S F E T i i : t >ffiijL*s'fg <, X ^ y f > 7 & H b ü t l Z U § £ £ > ,