NTE105
Abstract: TO36 package pnp germanium to36 Germanium power
Text: NTE105 Germanium PNP Transistor Audio Power Amp Description: The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power switching and amplifier applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
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NTE105
NTE105
TO36 package
pnp germanium to36
Germanium power
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germanium transistor pnp
Abstract: nte213
Text: NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings:
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NTE213
NTE213
500mA
germanium transistor pnp
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"PNP Transistor"
Abstract: germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor
Text: NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
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NTE226
NTE226
200mA
200mA,
"PNP Transistor"
germanium transistor pnp
GERMANIUM TRANSISTOR
pnp germanium transistor
GERMANIUM SMALL SIGNAL TRANSISTORS
pnp transistor 6V
transistor 200ma pnp
GERMANIUM
Germanium diode data sheet
germanium pnp transistor
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pnp germanium to36
Abstract: NTE330 Germanium power
Text: NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.
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NTE330
NTE330
pnp germanium to36
Germanium power
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NTE104M
Abstract: NTE104MP NTE104 transistor germanium germanium pnp transistor Germanium power 50V 1A PNP power transistor
Text: NTE104 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE104 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE104
NTE104
NTE104M
NTE104MP
transistor germanium
germanium pnp transistor
Germanium power
50V 1A PNP power transistor
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NTE158
Abstract: germanium pnp transistor Germanium power
Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low-power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
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NTE158
NTE158
300mA
germanium pnp transistor
Germanium power
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NTE121MP
Abstract: NTE121 GERMANIUM ie 10a germanium pnp transistor Germanium power
Text: NTE121 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE121
NTE121
NTE121MP
GERMANIUM
ie 10a
germanium pnp transistor
Germanium power
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germanium Power Transistor
Abstract: Vcb-60V NTE27 Germanium power
Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
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NTE27
NTE27
germanium Power Transistor
Vcb-60V
Germanium power
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germanium Power Transistor
Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
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NTE27
NTE27
germanium Power Transistor
pnp germanium transistor
germanium transistor pnp
GERMANIUM TRANSISTOR
Germanium power
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NTE158
Abstract: germanium audio Germanium power
Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low−power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
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NTE158
NTE158
300mA
germanium audio
Germanium power
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NTE158
Abstract: Germanium power
Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low–power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
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NTE158
NTE158
300mA
Germanium power
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Untitled
Abstract: No abstract text available
Text: su ^£.mi-dond\jictoi Lptoauoli, Una. LS 2N458A 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 PNP GERMANIUM POWER TRANSISTOR JEDEC TO-3 CASE 2N458A type is a PNP Germanium Alloy Junction Power Transistor manufacture
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2N458A
2N458A
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SMO-14
Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication
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MIL-S-19500A1B(
2N425
2Nb26
-AO07
SMO-14
SLG 2016 D
2SK26
2N42
N4 TAM
marking aaae
2n427
GERMANIUM SMALL SIGNAL TRANSISTORS
2N426
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Untitled
Abstract: No abstract text available
Text: , {Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4277 (GERMANIUM) PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages.
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2N4277
-15Ade,
-20Vde,
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NTE179
Abstract: No abstract text available
Text: NTE179 Germanium PNP Transistor Audio Power Amplifier, High Current Switch Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating
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NTE179
NTE179
100mA
500mA,
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AF279
Abstract: tfk transistor germanium-pnp-mesa-hf-transistor AF279 transistor tfk 140 Germanium mesa AF 279 042PF
Text: Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: V orstufen bis 900 MHz Applications: Pre stages up to 900 MHz Besondere Merkmale: Features: • Passivierte O berfläche • • Leistungsverstärkung 16 dB • Power gain 16 dB
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AF 109 R
Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor
Text: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB
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AF109R
AF 109 R
AF109R
af109
germanium-pnp-mesa-hf-transistor
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2N1046
Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
Text: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an
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2N1046
DC-11
germanium power transistor
diode germanium tu 38 f
Germanium Transistor
Texas Germanium
639 TRANSISTOR PNP
Germanium power
diode germanium tu 38 e
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2N1011
Abstract: marking 67A
Text: MIL-S-ì9500/ó7A EL 10 October i 960 SUPERSEDING MIL-T-19500/67(SigC) 22 January 1959 MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM, 50-WATT TYPE 2N1011 1; 1 Scope,- This specification covers the detail requirements for germanium, PNP, power transistors for use in compatible equipment circuits. (See 3.4 and 6.2 herein.)
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MIL-S-19500/67A
MIL-T-19500/67
50-WATT
2N1011
-65to
5961-AO78
2N1011
marking 67A
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OC 74 germanium transistor
Abstract: GERMANIUM SMALL SIGNAL TRANSISTORS germanium Power Transistor G0503 7N51 Germanium power
Text: MPI 10 GERMANIUM s' / V? , / PNP germanium power transistor designed for high-gain power amplification in the audio range. S T Y L E I: PIN 1. B A SE 2. EM IT T ER CA SE : C O L L E C T O R CASE 11 MAXIMUM R A T IN G S (Tc = 25°C unless otherwise noted)
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10Q-C.
OC 74 germanium transistor
GERMANIUM SMALL SIGNAL TRANSISTORS
germanium Power Transistor
G0503
7N51
Germanium power
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transistor 335
Abstract: 2N2468 germanium pnp transistor Germanium power
Text: 2N2468 GERMANIUM PNP POWER TRANSISTOR PACKAGE STYLE T O - 5 DESCRIPTION: The 2N2468 is a Medium Power Transistor for General Purpose Am plifier and Switching Applications MAXIMUM RATINGS lc 3.0 A V ce -50 V P diss 5.0 W @ Tc = 25 °C Tj -55 °C t o +100 °C
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2N2468
2N2468
transistor 335
germanium pnp transistor
Germanium power
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transistor kc 2026
Abstract: 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 2n173 2N2079A MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026
Text: M IL -S-19500/340 17 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N2079A This specification Is mandatory for use by all D epart m ents and Agencies of the D epartm ent of Defense. 1 s SCOPE 1.1 Scope. T his specification covers the detailed req u irem en ts for a high-pow er, germanium,
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MIL-S-19500/340
2N2079A
Adc-19500/340
2N2079A
2N173
2N2079
2N277
2N2080,
2N2080A
2N278
transistor kc 2026
2n2079
2N1099
GERMANIUM* 2n1099
2N2082
transistor sec 621
MIL-S-19500 FOR POWER LINE TRANSISTOR
kc 2026
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Untitled
Abstract: No abstract text available
Text: 2N2468 GERMANIUM PNP POWER TRANSISTOR PACKAGE STYLE T O - 5 .335 *“ .370“ * i , 305 • p .3 3 5 J DESCRIPTION: The 2N2468 is a Medium Power Transistor for General Purpose Am plifier and Switching Applications T1.50 MIN. 3.0 A lc -50 V ce P diss 5.0 W @ Tc = 25 °C
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2N2468
2N2468
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MP1613
Abstract: MPT613 adc 515 pnp germanium low power transistor 100-C Germanium power
Text: MP1613 GERMANIUM S T Y L E 1: PIN I. B A S E 2. E M IT T E R C A S E: C O L L E C T O R Medium-current germanium PNP power transistor, designed for use in 12 Volt: vertical deflection circuits in television receivers; features: high breakdown voltage, low leakage current, and low saturation volt
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MP1613
J001I
MP1613
MPT613
adc 515
pnp germanium low power transistor
100-C
Germanium power
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