POWEC Search Results
POWEC Datasheets Context Search
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8n20
Abstract: 8n18 C-313 SEFP8N20 POWEC
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fPM18 SEFP8N20 80V/200V 20Kfl) C-313 300duty 8n20 8n18 C-313 SEFP8N20 POWEC | |
powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
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111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor | |
Contextual Info: PowerCat C5E F/UTP Cable PVC TECHNICAL SPECIFICATIONS Features summary Molex Premise Networks PowerCat C5E 4 Pair F/UTP cable has been designed to support high speed data transmission systems. This cable is part of the PowerCat System range of products that have |
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dB/100 f/100) ns/100m 9A-504-FT 9A-504-FT# | |
IC 1691 AI CIRCUIT DIAGRAM
Abstract: 1691 AI 50/MSC 1691 A1
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125mAh MAX1691 16-PIN IC 1691 AI CIRCUIT DIAGRAM 1691 AI 50/MSC 1691 A1 | |
bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
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Contextual Info: cP IITSU May 1997 Revision 0.3 data sheet GOB512UV6431 A -(67/84/100/125)Q-S 4 MByte (512Kx 64) CMOS Synchronous Graphic Module General Description The GOB512llV6431(A)-(67/84/100/125)Q-S is a high performance, 4-megabtye synchronous, graphic RAM module organized |
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GOB512UV6431 512Kx GOB512llV6431 144-pin, G83222- 256Kx32 GOB512UV6431 GOB512UV6431A Q02327Ã | |
29L510
Abstract: l510 L510B Am29510/L510
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Am29510/L510 35-bit 32-bit 110ns 16-bit 03563B 29L510 l510 L510B | |
Z84 D
Abstract: z80pio Z80CPU Ates
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Z84C00 Z84C30 Z84C4X Z84C15 Z84015 Z84C20 84-pin Z84013 100-pin Z84 D z80pio Z80CPU Ates | |
Contextual Info: fax id: 1030 CY7C199 32K x 8 Static RAM Features • Highspeed — 10 ns • Fast tpoE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only) |
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CY7C199 CY7C199 300-mil-wide | |
DH0034Contextual Info: ELANTEC INC TÔ 3129557 ELANTEC Î>Ë| BISTSS? ODOGS3D 1 INC 98 D 0 0 5 3 0 HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS 9 S 3 -31 ÏQ033C . Fast Bu/f^K Amplifier Features General Description • • • • • • The ELH0033 is a high-spefed, E Ë ^n p ^ ^o ltag M o llo w er/b u ffer |
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Q033C ELH0033 500V/ps 100mA 100MHz MIL-STD-883 ELH0033, ELH0033/ELH0033C DH0034 | |
ASP-105884-01
Abstract: 13002 hj B1 PA66-GF13 5mm ldr ASP-105885-01 mj 13003 IRF 3055 DIN 16901 130 plastic PCI x1 express PCB dimensions artwork Training TV repair
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Series09 ASP-105884-01 13002 hj B1 PA66-GF13 5mm ldr ASP-105885-01 mj 13003 IRF 3055 DIN 16901 130 plastic PCI x1 express PCB dimensions artwork Training TV repair | |
WRD-YKD-5W
Abstract: microdc
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DIP24 DIP24 WRD120505YKD-5W WRD120909YKD-5W WRD121212YKD-5W WRD121515YKD-5W WRD122424YKD-5W WRD240505YKD-5W WRD240512YKD-5W WRD-YKD-5W microdc | |
Contextual Info: EL2005/EL2005C ELANTEC INC % HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS DeJ BIETSS? • Low input current—50 pA • Low offset &drift— 2mV/25fiV/°C • High slew rate—1500V/jiS • F&st rise &fall time—2.5ns • High input resistance1000GQ • Bandwidth—140MHz |
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EL2005/EL2005C 2mV/25fiV/Â 500V/jiS resistance1000GQ 140MHz ELH0033 MHrSTD-883 EL2005CG MDP0002 EL2005CG/E+ | |
powecContextual Info: KM41C4000C, KM41V4000C CMOS DRAM 4M x 1 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access |
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KM41C4000C, KM41V4000C 1024cycles powec |