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    POP 168 Search Results

    POP 168 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL54406IRTZ Renesas Electronics Corporation Stereo Click and Pop Eliminator with Audio Muting Visit Renesas Electronics Corporation
    ISL54406IRTZ-T Renesas Electronics Corporation Stereo Click and Pop Eliminator with Audio Muting Visit Renesas Electronics Corporation
    ISL54406IRUZ-T Renesas Electronics Corporation Stereo Click and Pop Eliminator with Audio Muting Visit Renesas Electronics Corporation
    ISL54405IVZ-T Renesas Electronics Corporation CD/MP3 Quality Stereo 2:1 Multiplexer with Click and Pop Elimination Visit Renesas Electronics Corporation
    ISL54405IVZ Renesas Electronics Corporation CD/MP3 Quality Stereo 2:1 Multiplexer with Click and Pop Elimination Visit Renesas Electronics Corporation

    POP 168 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT29C2G24MAKLAJG-75 IT

    Abstract: MT29C2G24MAKLAjg JW256
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		PDF 168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29C2G24MAKLAJG-75 IT MT29C2G24MAKLAjg JW256

    MT29F2G16AB

    Abstract: MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		PDF 168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29F2G16AB MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET

    smd marking K23

    Abstract: lpddr SMD transistor MARKING CODE g23 marking k22 SMD 168-ball LPDDR sac105 LPDDR Pop smd transistor ab2 MT46H64M32 SMD transistor k23
    Text: Preliminary‡ 168-Ball x16, x32 Mobile LPDDR PoP TI OMAP Mobile DDR SDRAM Addendum Mobile LPDDR 168-Ball Package-on-Package (PoP) TI OMAP MT46HxxxMxxLxJG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS)


    Original     		PDF 168-Ball MT46HxxxMxxLxJG 09005aef833508fb/Source: 09005aef83350d72 smd marking K23 lpddr SMD transistor MARKING CODE g23 marking k22 SMD 168-ball LPDDR sac105 LPDDR Pop smd transistor ab2 MT46H64M32 SMD transistor k23

    LA-1901

    Abstract: EPCOS R800 rg82855 rg82855pm LR431 c2t225 dell 90W ac adapter schematic SN7002 ddq12 1203P1
    Text: 5 4 3 2 1 D D LKB-ADDs, Plus Schematic REV : A02 C C @ 1@ 2@ 3@ 4@ : : : : : Depop Component for All Pop Component for Lindbergh Series Pop Component for Kapalua series Depop Component for Lindbergh Plus series Pop Component for Lindbergh Plus series B B DDQ12/LA1901 Schematic with Capture CIS and Function field


    Original     		PDF DDQ12/LA1901 DDQ12/11/01 LA-1901 ADM1032 PL120 PL126 LA-1901 EPCOS R800 rg82855 rg82855pm LR431 c2t225 dell 90W ac adapter schematic SN7002 ddq12 1203P1

    MT29F4G08ABA

    Abstract: MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,


    Original     		PDF 168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08

    CSN-11

    Abstract: MT46H64M32L2KQ 168B micron lpddr lpddr smd code marking CK BA121 Marking Code TI OMAP micron marking code information marking code micron label
    Text: Preliminary‡ 168-Ball x32 Mobile LPDDR PoP TI OMAP Addendum Features Mobile LPDDR Addendum 168-Ball Package-on-Package (PoP) WFBGA TI OMAP MT46HxxxMxxL2KQ Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS)


    Original     		PDF 168-Ball MT46HxxxMxxL2KQ 09005aef83a3b4e1/Source: 09005aef83a3b4cb CSN-11 MT46H64M32L2KQ 168B micron lpddr lpddr smd code marking CK BA121 Marking Code TI OMAP micron marking code information marking code micron label

    MT29C4G48MAZAPAKQ-5

    Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


    Original     		PDF 168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package

    MT29F4G08ABA

    Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAPŒ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,


    Original     		PDF 168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29C4G48 ELPIDA LPDDR2 POP

    MT29F4G08ABA

    Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
    Text: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


    Original     		PDF 168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29F4G08ABA MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96

    MT46H64M32

    Abstract: marking k22 SMD pop 168 U22-T23 marking code micron label micron lpddr SMD marking code B10 SMD CODE aa23 AB22-AB23 AC18-AC19
    Text: Preliminary‡ 168-Ball x16, x32 LPDDR-SDRAM PoP TI OMAP Features LPDDR-SDRAM 168-Ball Package-on-a-Package (PoP) TI OMAP MT46HxxxMxxLxJG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)


    Original     		PDF 168-Ball MT46HxxxMxxLxJG 09005aef833508fb/Source: 09005aef83350d72 MT46H64M32 marking k22 SMD pop 168 U22-T23 marking code micron label micron lpddr SMD marking code B10 SMD CODE aa23 AB22-AB23 AC18-AC19

    MT29C4G48MAZBBAKQ-48 IT

    Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)


    Original     		PDF 168-Ball MT29C4G48MAZBBAKQ-48 MT29C4G96MAZBBCJG-48 MT29C8G96MAZBBDJV-48 09005aef855512a5 168ball MT29C4G48MAZBBAKQ-48 IT MT29C8G96MAZBBDJV-48 IT mt29c4g96

    MT29C2G24m

    Abstract: MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD
    Text: Preliminary‡ 168-Ball NAND Flash and LP-DRAM PoP TI-OMAP MCP Features NAND Flash and LP-DRAM 168-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		PDF 168-Ball 09005aef83071038/PDF: 09005aef83070ff3 168ball MT29C2G24m MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD

    JEDEC Jc-11 free

    Abstract: PSVFBGA FCCSP 0.3mm pitch csp package Amkor Technology amkor flip Amkor CSP mold compound Amkor Wafer level mold compound 0.65mm pitch BGA mold cap
    Text: LAMINATE data sheet Package on Package PoP Family Bottom PoP Technologies: Features: After three years of development in package stacking technology and infrastructure, Amkor launched the multiple award winning PSvfBGA platform in the 4th quarter of 2004. The next four years saw many new


    Original     		PDF wirebon00 JEDEC Jc-11 free PSVFBGA FCCSP 0.3mm pitch csp package Amkor Technology amkor flip Amkor CSP mold compound Amkor Wafer level mold compound 0.65mm pitch BGA mold cap

    DDR molex 184

    Abstract: RG82855 compal Pln c115 60-Amp LPC47N254 C936 Compal Electronics la-1901 dell
    Text: 5 4 3 2 1 D D LBK-ADDs Schematic REV : A00 C C @ : Depop Component for All 1@ : Pop Component for Lindbergh Series 2@ : Pop Component for Kapalua series B B DDQ12/LA1901 Schematic with Capture CIS and Function field uFCPGA Banias 06-24-2003 REV: 1.0 A A DELL CONFIDENTIAL/PROPRIETARY


    Original     		PDF DDQ12/LA1901 DDQ12/11/01 LA-1901 ADM1032 400MHz DC04001440L SC1476 DDR molex 184 RG82855 compal Pln c115 60-Amp LPC47N254 C936 Compal Electronics la-1901 dell

    EDB4432BAPA

    Abstract: No abstract text available
    Text: DATA SHEET 4G bits DDR2 Mobile RAM PoP 12mm x 12mm, 168-ball FBGA EDB4432BAPA Specifications Features • Density: 4G bits • Organization — 16M words × 32 bits × 8 banks • Data rate: 1066Mbps (max.) • Package: 168-ball FBGA — Package size: 12.0mm × 12.0mm


    Original     		PDF 168-ball EDB4432BAPA 1066Mbps M01E1007 E1775E40 EDB4432BAPA

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2G bits DDR2 Mobile RAM PoP 12mm x 12mm, 168-ball FBGA EDB2432BCPE Specifications Features • Density: 2G bits • Organization — 8M words × 32 bits × 8 banks • Data rate: 800Mbps (max.) • Package: 168-ball FBGA — Package size: 12.0mm × 12.0mm


    Original     		PDF 168-ball EDB2432BCPE 800Mbps M01E1007 E1881E20

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 8G bits DDR2 Mobile RAM PoP 12mm x 12mm, 168-ball FBGA EDB8132B3PB Specifications Features • Density: 8G bits • Organization — 16M words × 32 bits × 8 banks × 2 ranks — 2 pieces of 4Gb (×32) in one package • Data rate: 1066Mbps (max.)


    Original     		PDF 168-ball EDB8132B3PB 1066Mbps M01E1007 E1776E40

    eMMC "thermal impedance"

    Abstract: PCIMX535DVV1C emmc Card connector 062N n78c 4.712 eMMC PoP emmc pcb layout 100KPD diode 4.7-16
    Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 2, 5/2011 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA PoP 12 x 12 mm


    Original     		PDF IMX53CEC MCIMX53xD MX53xD DDR2/LVDDR2-800, eMMC "thermal impedance" PCIMX535DVV1C emmc Card connector 062N n78c 4.712 eMMC PoP emmc pcb layout 100KPD diode 4.7-16

    APA2066

    Abstract: STD-020C SOP 16Pin tray
    Text: APA2066 Stereo 1.8-W Audio Power Amplifier Features General Description • Low Supply Current , IDD = 12mA • High PSRR Power Supply Ripple Rejection • De-pop Circuitry Integrated • Thermal Shutdown Circuitry Integrated • Output Power at 1% THD+N , VDD =5V


    Original     		PDF APA2066 APA2066 16-pin APA2066, STD-020C SOP 16Pin tray

    Untitled

    Abstract: No abstract text available
    Text: w Product Brief WM8900 Ultra low Power CODEC for Portable Multimedia Applications Featuring Class G Ground Referenced Headphone Driver DESCRIPTION FEATURES The WM8900 is designed for portable multimedia applications requiring low power consumption, high performance audio and a compact form factor. Pop and


    Original     		PDF WM8900 WM8900

    ic 4440 for audio amplification

    Abstract: WM8900L 4440 audio amplifier WM8900 audio amplifier circuit diagram by 4440 ic 4440 for sound amplification ceramic capacitor, .1uF ic 4440 microphones amplification ta 7176 datasheet capacitor 1000 uf 63v
    Text: w WM8900 Ultra Low Power CODEC for Portable Multimedia Applications Featuring Class G Ground Referenced Headphone Driver DESCRIPTION The WM8900 is designed for portable multimedia applications requiring low power consumption, high performance audio and a compact form factor. Pop and click optimised ground


    Original     		PDF WM8900 -82dB 48kHz -84dB -15dB ic 4440 for audio amplification WM8900L 4440 audio amplifier WM8900 audio amplifier circuit diagram by 4440 ic 4440 for sound amplification ceramic capacitor, .1uF ic 4440 microphones amplification ta 7176 datasheet capacitor 1000 uf 63v

    Untitled

    Abstract: No abstract text available
    Text: APA2066 Stereo 1.8-W Audio Power Amplifier Features General Description • Low Supply Current , IDD = 12mA • High PSRR Power Supply Ripple Rejection • De-pop Circuitry Integrated • Thermal Shutdown Circuitry Integrated • Output Power at 1% THD+N , VDD =5V


    Original     		PDF APA2066 APA2066 16-pin APA2066,

    pin vga CRT pinout

    Abstract: samsung* lpddr2 LPDDR2-800 i.MX53 PCIMX535DVV1C emmc DDR pcb layout Samsung eMMC 4.41 LPDDR2 PoP JESD209-2 flexcan2
    Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 3, 7/2011 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA PoP 12 x 12 mm


    Original     		PDF IMX53CEC MCIMX53xD MX53xD pin vga CRT pinout samsung* lpddr2 LPDDR2-800 i.MX53 PCIMX535DVV1C emmc DDR pcb layout Samsung eMMC 4.41 LPDDR2 PoP JESD209-2 flexcan2

    2020B

    Abstract: se 047 equivalent
    Text: APA2020B Stereo 1.8-W Audio Power Amplifier Features General Description • Low Supply Current , IDD = 12mA • High PSRR Power Supply Ripple Rejection • De-pop Circuitry Integrated • Thermal Shutdown Circuitry Integrated • Output Power at 1% THD+N , VDD =5V


    Original     		PDF APA2020B APA2020B 24-pin APA2020B, 2020B se 047 equivalent