Analog Demultiplexers
Abstract: CXA2111R CXA2112R LCX016 LCX017 precision waveform generator LCX017 sony
Text: CXA2112R LCD Driver Description The CXA2112R is a driver IC developed for use in the 6-input/12-input Sony polysilicon TFT LCD panel LCX016/017 . It has a line invert amplifier and analog de-multiplexers, timing generator and output buffers required for these. CXA2112R can directly
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CXA2112R
CXA2112R
6-input/12-input
LCX016/017)
LCX016/017.
LCX016,
LCX017.
100MHz)
signalCXA2112R
Analog Demultiplexers
CXA2111R
LCX016
LCX017
precision waveform generator
LCX017 sony
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STGP10NB37LZ
Abstract: SCHEMATIC IGNITION WITH IGBTS
Text: STGP10NB37LZ N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh IGBT • ■ ■ ■ ■ ■ TYPE VCES VCE sat IC STGP10NB37LZ CLAMPED < 1.8 V 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY
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STGP10NB37LZ
O-220
STGP10NB37LZ
SCHEMATIC IGNITION WITH IGBTS
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IXTH50N20
Abstract: SFF50N20M SFF50N20Z
Text: PRELIMINARY SFF50N20M SFF50N20Z SOLID STATE DEVICES, INC. 14830 Valley View Av. * La Mirada, Ca 90670 Phone: 562 404-7855 * Fax: (562) 404-1773 50 AMPS 200 VOLTS 0.055 S N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: Rugged construction with polysilicon gate
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SFF50N20M
SFF50N20Z
IXTH50N20
O-254
O-254Z
125oC
SFF50N20M
SFF50N20Z
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AEC-Q100
Abstract: BGA2002 001aam919
Text: BGA2002 MMIC amplifier Rev. 3 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a
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BGA2002
OT343R
AEC-Q100
BGA2002
001aam919
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LC15007
Abstract: SANYO TFT LV4149W ALR129FGX LV4141W sanyo lcd controller sanyo LCD camera display XENB sanyo tft screen
Text: Ordering number : ENN7661 ALR129FGX LCD Module ALR129FGX Low-Temperature Polysilicon 1.5-inch TFT LCD Module This low power consumption 1.5 inch Low-Temperature polysilicon TFT LCD module is suitable for view finder of digital still camera. Features • •
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ENN7661
ALR129FGX
poli7901000181
LC15007
SANYO TFT
LV4149W
ALR129FGX
LV4141W
sanyo lcd controller
sanyo LCD camera display
XENB
sanyo tft screen
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lv4135
Abstract: lv4137 sanyo tft display ALP024AGX LV4135W sanyo led display LV4137W 76655 2.8 inch video display circuits XENB
Text: Ordering number : ENN7655 ALP024AGX LCD Module ALP024AGX Low-Temperature Polysilicon 0.50-inch TFT LCD Module This low power consumption 0.50 inch Low-Temperature polysilicon TFT LCD module is suitable for view finder of digital still camera or digital video camera.
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ENN7655
ALP024AGX
50-inch
poli7901000181
lv4135
lv4137
sanyo tft display
ALP024AGX
LV4135W
sanyo led display
LV4137W
76655
2.8 inch video display circuits
XENB
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SL10100
Abstract: SL80
Text: O K I Semiconductor M S M 5 1 V 4 2 6 0 /S L _ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T he M SM 51V4260/SL is a 262,144-word x 16-bit d ynam ic R A M fabricated in O K I's C M O S silicon gate technology. The M SM 51V4260/SL achieves high integration, high-speed operation, and lowpow er consum ption due to qu adruple polysilicon single m etal C M O S . The M SM 51V4260/SL is
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MSM51V4260/SL_
144-Word
16-Bit
MSM51V4260/SL
40-pin
44/40-pin
SL10100
SL80
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LCX017 sony
Abstract: Analog Demultiplexers cxa2111r sony lcd CXA2112R LCX016 LCX017 LCX* sony CXA2111
Text: SONY CXA2112R LCD Driver Description The CXA2112R is a driver IC developed for use in the 6-input/12-input Sony polysilicon TFT LCD panel LCX016/017 . It has a line invert amplifier and analog de-multiplexers, timing generator and output buffers required for these. CXA2112R can directly
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CXA2112R
6-input/12-input
LCX016/017)
LCX016/017.
LCX016,
LCX017.
100MHz)
CXA2112R
64PIN
LCX017 sony
Analog Demultiplexers
cxa2111r
sony lcd
LCX016
LCX017
LCX* sony
CXA2111
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MSM511000
Abstract: ZIP20-P-400 dip26
Text: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is
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MSM511000B/BL
576-Word
MSM511000B/BL
18-pin
26/20-pin
20-pin
MSM511000BL
MSM511000
ZIP20-P-400
dip26
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MSM51V16805A
Abstract: No abstract text available
Text: • O K I Semiconductor_ M SM 51V16805A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FA ST P A G E M O D E T Y P E WITH ED O DESCRIPTION The MSM51V16805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16805A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16805A is
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MSM51V16805A_
152-Word
MSM51V16805A
28-pin
cycles/64
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IRFS9640
Abstract: IRFS9641
Text: P-CHANNEL POWER MOSFETS IRFS9640/9641 FEATURES • • • • • • • Lower R d sio n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFS9640/9641
IRFS9640
-200V
IRFS9641
-150V
O-220F
-100V
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SSS4N80
Abstract: SSS4N70 "VDSS 800V" 40A mosfet
Text: N-CHANNEL POWER MOSFETS SSS4N80/70 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSS4N80/70
SSS4N80
SSS4N70
O-220F
"VDSS 800V" 40A mosfet
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IRFS150
Abstract: 250M IRFS151 diode deg avalanche zo 150 60
Text: N-CHANNEL POWER MOSFETS IRFS150/151 FEATURES • Low er Rds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFS150/151
IRFS150
IRFS151
7Tbm42
250M
diode deg avalanche zo 150 60
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IRFS840
Abstract: IRFS841 IRFS842 IRFS843
Text: SAMSUNG ELECTRONICS INC L.7E » • 7Tb4142 001730^ £k>5 ■ SM6K N-CHANNEL POWER MOSFETS IRFS840/841/842/843 FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s Fast sw itch in g tim es R ug ged polysilicon g a te cell stru ctu re
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IRFS840/841/842/843
O-220F
IRFS840/841/842/843
IRFS840
IRFS841
IRFS842
IRFS843
IRFS84G
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IRFS521
Abstract: IRFS520
Text: N-CHANNEL POWER MOSFETS IRFS520/521 FEATURES • • • • • • • Lower R ds <o n Improved inductive rugged ness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFS520/521
IRFS52Ã
IRFS521
to-220f
IRFS520
D02ST74
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SSH60N10
Abstract: 21133 250M SSH60N08
Text: N-CHANNEL POWER MOSFETS SSH60N10/08 FEATURES • • • • • • • Lower R ds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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SSH60N10/08
SSH60N10
SSH60N08
21133
250M
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9211
Abstract: irfu9210 20A, 50V, P-Channel U9210 IRFR9210
Text: IRFR9210/9211 IRFU9210/9211 P-CHANNEL POWER MOSFETS FEATURES D -P A K • Low er R d s <o n • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Lo w er input cap acitance • Extended sa fe operating area
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IRFR9210/9211
IRFU9210/9211
IRFR9210/U9210
-200V
IRFR9211/U9211
-150V
9211
irfu9210
20A, 50V, P-Channel
U9210
IRFR9210
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SSP3N90
Abstract: tf25c MOSFET 900V 3A
Text: N-CHANNEL POWER MOSFETS SSP3N90 FEATURES • • • • • • • Lower R d s io n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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SSP3N90
O-220
SSP3N90
0G2fl44D
tf25c
MOSFET 900V 3A
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IRFS730
Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 IRFS730/731/732/733 DDlTBbl 777 «SPIC K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance
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7Rb414B
IRFS730/731/732/733
to-220f
IRFS730/731
/732Z733
IRFS730
IRFS731
IRFS732
IRFS733
733 mosfet
731 MOSFET
IR 733
0D173
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Untitled
Abstract: No abstract text available
Text: microCMOS NMC6164 8192 x 8-Bit Static RAM General Description Features The NMC6164 is a 8192-word by 8-bit new generation s ta tic RAM. It is fabricated w ith N a tio n a l's proprietary m icroC M O S do uble-polysilicon tech nolog y w hich com bines high pe rform ance and high de nsity w ith low power
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NMC6164
8192-word
28-pin
NMC6164
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IRFIZ44
Abstract: IRFIZ40 IRFWZ40 IRFWZ44 LS50A
Text: N-CHANNEL POWER MOSFETS IRFWZ44/40 IRFIZ44/40 FEATURES • • • • • • • D!-PAK Lower R d sio n Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFWZ44/40
IRFIZ44/40
IRFWZ44/IZ44
IRFWZ40/IZ40
IRFWZ44
IRFIZ44
IRFWZ40
IRFIZ40
LS50A
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250M
Abstract: IRFS820 IRFS821
Text: N-CHANNEL POWER MOSFETS IRFS820/821 FEATURES TQ-220F • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFS820/821
IRFS820
IRFS821
to-220f
250M
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1N45
Abstract: Mosfet 1N45 SSU1N50 1n45 mosfet 250M u1n50
Text: SSR1N50/45 SSU1N50/45 N-CHANNEL POWER MOSFET FEATURE • • • • • • • D-PAK Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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SSR1N50/45
SSU1N50/45
SSR1N50/U1N50
SSR1N45/U1N45
SSR1N50/1N45
SSU1N50/1N45
widths300,
7Tb4142
1N45
Mosfet 1N45
SSU1N50
1n45 mosfet
250M
u1n50
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SSH6N60
Abstract: 250M SSH6N55 MOSFET 600v 60a
Text: N-CHANNEL POWER MOSFETS SSH6N60/55 FEATURES • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSH6N60/55
SSH6N60
SSH6N55
7clhm42
0Q2R21S
250M
MOSFET 600v 60a
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