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    PO 3000 Search Results

    PO 3000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ST3000GXH35A Toshiba Electronic Devices & Storage Corporation IEGT, 4500 V, 3000 A, 2-168A2S Visit Toshiba Electronic Devices & Storage Corporation
    CS-USBAM003.0-001 Amphenol Cables on Demand Amphenol CS-USBAM003.0-001 Amphenol Premium USB 3.0/3.1 Gen1 Certified USB Type A-A Cable - USB 3.0 Type A Male to Type A Male [5.0 Gbps SuperSpeed] 1m (3.3') Datasheet
    CS-USBAB003.0-002 Amphenol Cables on Demand Amphenol CS-USBAB003.0-002 Amphenol Premium USB 3.0/3.1 Gen1 Certified USB Type A-B Cable - USB 3.0 Type A Male to Type B Male [5.0 Gbps SuperSpeed] 2m (6.6') Datasheet
    CS-USBAB003.0-001 Amphenol Cables on Demand Amphenol CS-USBAB003.0-001 Amphenol Premium USB 3.0/3.1 Gen1 Certified USB Type A-B Cable - USB 3.0 Type A Male to Type B Male [5.0 Gbps SuperSpeed] 1m (3.3') Datasheet
    CS-USBAM003.0-002 Amphenol Cables on Demand Amphenol CS-USBAM003.0-002 Amphenol Premium USB 3.0/3.1 Gen1 Certified USB Type A-A Cable - USB 3.0 Type A Male to Type A Male [5.0 Gbps SuperSpeed] 2m (6.6') Datasheet
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    PO 3000 Price and Stock

    Hirschmann Electronics GmbH & Co Kg MACH104-16TX-POEP

    Unmanaged Ethernet Switches Managed 20-port Full Gigabit 19" Switch with PoEP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MACH104-16TX-POEP 1
    • 1 $8942.4
    • 10 $8942.4
    • 100 $8942.4
    • 1000 $8942.4
    • 10000 $8942.4
    Buy Now

    Fluke Corporation FI-3000TP-AMPO12F

    Fiber Optic Testing MPO 12 OR 24 APC TIP FOR BULKHEADS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FI-3000TP-AMPO12F
    • 1 $238.69
    • 10 $238.69
    • 100 $238.69
    • 1000 $238.69
    • 10000 $238.69
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    ADLINK Technology Inc DLAP-3000 Power Button Module

    Switching Power Supplies DLAP-3000 Power Button Module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DLAP-3000 Power Button Module
    • 1 $79.98
    • 10 $75.14
    • 100 $67.86
    • 1000 $67.86
    • 10000 $67.86
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    ADLINK Technology Inc DLAP-3000 AC-DC power supply kit 500W

    Switching Power Supplies DLAP-3000 AC-DC power supply kit 500W(12V/41.7A), one cable 2x4P(4.2), 3 cables with one AC inlet.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DLAP-3000 AC-DC power supply kit 500W
    • 1 $219.74
    • 10 $206.02
    • 100 $199.15
    • 1000 $199.15
    • 10000 $199.15
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    Hirschmann Electronics GmbH & Co Kg MACH104-16TX-POEP-L3P

    Unmanaged Ethernet Switches Managed 20-port Full Gigabit 19" Switch with PoEP and L3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MACH104-16TX-POEP-L3P
    • 1 $11732.29
    • 10 $11732.29
    • 100 $11732.29
    • 1000 $11732.29
    • 10000 $11732.29
    Get Quote

    PO 3000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2601NH

    Abstract: T 7224 Diode 78 DIOD
    Text: Datenblatt / Data sheet SH Puls Po wer Diod e Pulse Po wer Diode D 2601NH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages


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    2601NH 2601NH T 7224 Diode 78 DIOD PDF

    78 DIOD

    Abstract: p j 85 diod
    Text: Datenblatt / Data sheet SH Puls Po wer Diod e Pulse Po wer Diode D 2601NH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages


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    2601NH 78 DIOD p j 85 diod PDF

    sat 1205

    Abstract: 100w stereo class b amplifier with tone controls 100w car amplifier car woofer amplifier circuit diagram 15W stereo amplifiers with tone controls circuits 100w audio amplifier circuit diagram class D HZIP11 10w stereo class d amplifier with tone controls bass treble control circuit for woofer 100 100w stereo amplifier
    Text: UTC 1205 LINEAR INTEGRATED CIRCUIT 20W BRIDGE AMPLIFIER FOR CAR RADIO DESCRIPTION The UTC 1205 is class B dual audio power amplifier, have designed for car radio application. HZIP-11 FEATURES * High output power: Po=10+10W@RL=2Ω, d=10% Po=20W@RL=4Ω, d=1%


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    HZIP-11 HSIP-14 HSIP-14* QW-R107-026 sat 1205 100w stereo class b amplifier with tone controls 100w car amplifier car woofer amplifier circuit diagram 15W stereo amplifiers with tone controls circuits 100w audio amplifier circuit diagram class D HZIP11 10w stereo class d amplifier with tone controls bass treble control circuit for woofer 100 100w stereo amplifier PDF

    S-AU80

    Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
    Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors


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    10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AU80 TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic PDF

    S-AV17

    Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079
    Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors


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    10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AV17 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ad vanced Thermal Prot ect i on f or Hig h Po wer LEDs wi t h 60V LED Dr i ver I C I LD6150 Appl icat io n Not e AN - EVAL- I LD6150 Revision: 2.1 Date: 22 July 2014 Po wer Manag em ent and Mult im ar k et Edition 2014-07-22 Published by Infineon Technologies AG


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    LD6150 AN-EVAL-ILD6150, AN-EVAL-ILD6150 ILD6150 ILD6150 PDF

    SN139

    Abstract: 1S1718
    Text: 4 2 3 1 RELEASED FOR WISLISATIJN- THIS DBAUIU9 15 U W M .IM D. COPYRIGHT 13 BY «IP INCORPORATED □ 1ST ALL SIWTS SMESUM. CF R EV IS IO N S p PO SN 12- - PO SN tot!— MJdAIW* 39 REV PER 2-3-38 0 0 2 0 - 0 1 7 5 -9 0 ora «m DICE FM 1 PO S N 13 P O SN


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    17T05 03-FEB-98 onp32 rp32429/ SN139 1S1718 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2387 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2387 PO W ER AM PLIFIER APPLICATIONS U nit in mm .2 + 0.2 15.9MAX. • High Breakdown Voltage : V^EO = 140V (Min.) • Complementary to 2SB1558 ^o 1 , /


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    2SD2387 2SB1558 PDF

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2384 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2384 PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = 140V (Min.) Complementary to 2SB1555 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SD2384 2SB1555 Emit00 2-21F1A 2SD2384 PDF

    2-21F1A

    Abstract: 2SB1556 2SD2385
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2385 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2385 PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = 140V (Min.) Complementary to 2SB1556 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SD2385 2SB1556 2-21F1A 2SB1556 2SD2385 PDF

    2SB1558

    Abstract: 2SD2387
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2387 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2387 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 03.2 ±0.2


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    2SD2387 2SB1558 2SD2387 PDF

    2SB1557

    Abstract: 2SD2386
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2386 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1557 03.2 ±0.2


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    2SD2386 2SB1557 2SD2386 PDF

    A1297

    Abstract: 2SA1297 2SC3267 A-1297
    Text: TOSHIBA 2SA1297 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : V qE (sat)= —0-5V (Max.) @Iq = —2A Complementary to 2SC3267.


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    2SA1297 A1297 2SC3267. 55MAX. 961001EAA2' A1297 2SA1297 2SC3267 A-1297 PDF

    2-21F1A

    Abstract: 2SB1594 2SD2449
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2449 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 160 V (Min.) Complementary to 2SB1594 M A X IM U M RATINGS (Ta = 25°C)


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    2SD2449 2SB1594 2-21F1A 2SD2449 PDF

    tr5v

    Abstract: 2-21F1A 2SB1555 2SD2384
    Text: TOSHIBA 2SB1555 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SB1555 --140V 2SD2384 tr5v 2-21F1A 2SB1555 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TPD7000F TOSHIBA INTELLIGENT PO W ER DEVICE SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TPD7000F 4-CHANNEL LOW-SIDE PO W ER MOS FET DRIVER TPD7000F is a power MOS FET driver for low-side switching. This 4-channel driver with a built-in circuit is


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    TPD7000F TPD7000F 24-pin SSOP24-P-300-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1297 TOSHIBA 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. — I . • • Low Saturation Voltage : V@e (sat)= -0.5V (Max.) @Iq = -2 A Complementary to 2SC3267.


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    2SA1297 2SC3267. 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V q e O = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C)


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    2SB1555 2SD2384 PDF

    2SB1557

    Abstract: 2SD2386
    Text: TO SH IBA 2SD2386 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 Unit in mm PO W E R A M PLIFIER APPLICATIONS 03.2 ± 0.2 1 5.9 MAX. • • High Breakdown Voltage : V q e O = 140 V (Min.) Complementary to 2SB1557


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    2SD2386 2SB1557 2SD2386 PDF

    2-5K1A toshiba

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE RN5001 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. 1.6 MAX0-4±0.05 PO W ER SW ITCHIN G APPLICATIONS. • W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process


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    RN5001 RN6001 2-5K1A toshiba PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLP2530,TLP2531 TOSHIBA PHOTOCOUPLER G a A M s IRED & PHOTO IC TLP2530, TLP2531 DEGITAL LOGIC ISOLATION U n it in mm LINE RECEIVER PO W ER SUPPLY CONTROL SWITCHING PO W ER SUPPLY 8 7 6 5 5L_E_5L_E.- The T O SH IB A TLP2530 and TLP2531 dual photocouplers consist of a


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    TLP2530 TLP2531 TLP2530, TLP2531 PDF

    to92c

    Abstract: No abstract text available
    Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 High Voltage Transistors Typ e M axim um Ratings N=NPN P=PNP BF420 BF421 BF422 BF423 BFP22 BFP23 BFP25 BFP26 N P N P N P N P V CEO V 'c m.\ Pt mW 300 300 250 250 200 200 300 300 50


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    BF420 BF421 BF422 BF423 BFP22 BFP23 BFP25 BFP26 O-92d to92c PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MP4207 TOSHIBA PO W ER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2-7r-MOSlV 4 IN 1 MP4207 INDUSTRIAL APPLICATIONS Unit in mm O HIGH PO W ER HIGH SPEED SWITCHING APPLICATIONS. O H-SW ITCH DRIVER • 4-Volt Gate Drive. • Small Package by Full Molding. (SIP 10 Pin)


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    MP4207 170mQ 10//A 100/JA PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE RN5002 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. i f 6 MAX- PO W ER SW IT C H IN G APPLICATIONS. 0 .4 ± 0 .05 1.7 MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process


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    RN5002 RN6002 --10V, PDF