PNP TRANSISTOR 0.1A 60V Search Results

PNP TRANSISTOR 0.1A 60V Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N
TTA2070	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini

PNP TRANSISTOR 0.1A 60V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
A733P Abstract: transistor a733 pnp A733-P a733 A733R Transistor a733 a733 transistor Transistor TO-92 A733 A733 P a733p transistor Contextual Info: A733 -0.1A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank	Original	A733-R A733-Q A733-P A733-K 04-Mar-2011 -100mA, -10mA 100Hz, A733P transistor a733 pnp A733-P a733 A733R Transistor a733 a733 transistor Transistor TO-92 A733 A733 P a733p transistor	PDF
2SA1611 Abstract: 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking Contextual Info: 2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 A L	Original	2SA1611 OT-323 2SC4177 2SA1611-M4 2SA1611-M6 2SA1611-M7 2SA1611-M5 -100mA, -10mA 2SA1611 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking	PDF
2SA1440 Abstract: 2SA144 SWITCHING TRANSISTOR 60V Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1440 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -0.5A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -2A, IB= -0.1A)	Original	2SA1440 2SA1440 2SA144 SWITCHING TRANSISTOR 60V	PDF
Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)	Original	2SA2094 2SC5866 SC-96) R1102A	PDF
2SB1393 Abstract: 2SD1985 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1393 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -1.2V(Max,)@ IC= -3A ·Complement to Type 2SD1985	Original	2SB1393 2SD1985 2SB1393 2SD1985	PDF
transistor a09 Abstract: ic 556 datasheet "PNP Transistor" ic 556 TSA1036 PNP Epitaxial Silicon Transistor sot-23 TSA1036CX TSC2411 transistor a09 SOT-23 Contextual Info: TSA1036 General Purpose PNP Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCBO -60V BVCEO -60V IC -0.6A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA Complementary part with TSC2411	Original	TSA1036 OT-23 -150mA -15mA TSC2411 TSA1036CX transistor a09 ic 556 datasheet "PNP Transistor" ic 556 TSA1036 PNP Epitaxial Silicon Transistor sot-23 TSC2411 transistor a09 SOT-23	PDF
2sd315 Abstract: 2SB509 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB509 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD315	Original	2SB509 2SD315 2sd315 2SB509	PDF
2SB813 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB813 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·High Power Dissipation APPLICATIONS ·Designed for AF power amplifier applications	Original	2SB813 2SB813	PDF
2SA766 Abstract: 2SC1450 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA766 DESCRIPTION •Collector-Base Breakdown Voltage: V BR CBO= -150V(Min) ·High Collector Power Dissipation·Complement to Type 2SC1450 APPLICATIONS ·Line-operated vertical deflection output	Original	2SA766 -150V 2SC1450 2SA766 2SC1450	PDF
2SB1038 Abstract: 2sd1310 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1038 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1310	Original	2SB1038 2SD1310 -50mA; 2SB1038 2sd1310	PDF
2SB1392 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1392 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Good Linearity of hFE APPLICATIONS ·Designed for low frequency power amplifier applications.	Original	2SB1392 2SB1392	PDF
2SB761 Abstract: SWITCHING TRANSISTOR 60V 2SD856 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB761 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD856 APPLICATIONS ·Designed for AF power amplifier applications.	Original	2SB761 2SD856 2SB761 SWITCHING TRANSISTOR 60V 2SD856	PDF
2SB1217 Abstract: 2SD1818 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1217 DESCRIPTION •High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818	Original	2SB1217 2SD1818 2SB1217 2SD1818	PDF
TRANSISTOR MJ11029 Abstract: transistor mj11028 equivalent MJ11028 MJ11029 TRANSISTOR MJ11028 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to Type MJ11028	Original	MJ11028 -250mA 500mA -500mA TRANSISTOR MJ11029 transistor mj11028 equivalent MJ11028 MJ11029 TRANSISTOR MJ11028	PDF

TRANSISTOR 2SB507 Abstract: TRANSISTOR AF 416 pnp 2SD313 E 2sd313 equivalent 2SB507 2sd313 applications 2SD313 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB507 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD313	Original	2SB507 2SD313 TRANSISTOR 2SB507 TRANSISTOR AF 416 pnp 2SD313 E 2sd313 equivalent 2SB507 2sd313 applications 2SD313	PDF
2SB1085A Contextual Info: S "7 > v 7, £ /Transistors 2SB1085A PNP '> ';= !> Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • &M : • i>\|.JfiT\|-;£\|I]/Dim ensions U n it: mm 1) 7 i . 5 (BVC e o = - 1 60V )o 2) A S O A 'l l 'o 3 ) W l i < , C o b A ^ J ^ l ' o 4) 2 S D 1 5 6 2 A t = J > y j T i > 5 o	OCR Scan	2SB1085A -160V 2SD1562A. 2SB1085A	PDF
Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2SA766 Silicon PNP Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage:V(BR)CBO=-150V(Min) • High Collector Power Dissipation• Complement to Type 2SC1450	Original	2SA766 -150V 2SC1450	PDF
2SB1548 Abstract: 2SD2374 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1548 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.2V(Max)@ (IC= -3A, IB= -0.375A)	Original	2SB1548 2SD2374 10MHz 2SB1548 2SD2374	PDF
BFX36 Abstract: transistor 200V 100MA NPN BFT44 BFY81 PNP TO77 package bfx80 Contextual Info: Search Results Part number search for devices beginning "BFT44" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BFT44 PNP TO39 300V 0.5A 100typ - 10/10m 60MHz	Original	BFT44" BFT44 BFT44S 100typ 10/10m 60MHz 70MHz BFT58" BFT58 BFX36 transistor 200V 100MA NPN BFY81 PNP TO77 package bfx80	PDF
2SB1116 Abstract: 2SD1616 2SD161 Contextual Info: 2SB1116 -1 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation Complementary to 2SD1616 G H J CLASSIFICATION OF hFE 1	Original	2SB1116 2SD1616 2SB1116-L 2SB1116-K 2SB1116-U 21-Jan-2011 2SB1116 2SD1616 2SD161	PDF
TRANSISTOR D400 Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)	Original	2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1812 2SA1727 2SA1776 96-609-A313) 2SA1834 2SC5001 TRANSISTOR D400 D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V	PDF
0340 TRANSISTOR PNP Contextual Info: 2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. APPLICATIONS 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962)	Original	2N4898X 2N4899X 2N4900X 2N4900X 2N4899X" 2N4899X-JQR-B 0340 TRANSISTOR PNP	PDF
2SA1214 Abstract: 50V 1A PNP power transistor Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1214 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -50V (Min) ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Desinged for low frequency power amplifier applications.	Original	2SA1214 -55-1mA; -150mA; -100mA; 2SA1214 50V 1A PNP power transistor	PDF
Contextual Info: MCC Features • • • • 2SA733 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Capable of 0.25Watts of Power Dissipation. Collector-current 0.1A Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150 OC	Original	2SA733 25Watts -55OC 50uAdc, 60Vdc, 100mAdc, 10mAdc) 10mAdc, 30MHz)	PDF

PNP TRANSISTOR 0.1A 60V Search Results

PNP TRANSISTOR 0.1A 60V Result Highlights (5)

PNP TRANSISTOR 0.1A 60V Datasheets Context Search

A733P

2SA1611

2SA1440

2SB1393

transistor a09

2sd315

2SB813

2SA766

2SB1038

2SB1392

2SB761

2SB1217

TRANSISTOR MJ11029

TRANSISTOR 2SB507

2SB1085A

2SB1548

BFX36

2SB1116

TRANSISTOR D400

0340 TRANSISTOR PNP

2SA1214