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    PNP 2N3906 BETA Search Results

    PNP 2N3906 BETA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PNP 2N3906 BETA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3906

    Abstract: 2SB0709 PMBT3906 2n3906 beta
    Text: F75395 ±1oC Temperature Sensor with ß Compensation Release Date: May, 2008 Revision: V0.15P F75395 F75395 Datasheet Revision History Version Date Page Revision History V0.10P 2007/7/30 - Preliminary Version V0.11P 2007/8/7 - Add function description V0.12P


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    PDF F75395 F75395 4C/30h 2N3906 2SB0709 PMBT3906 2n3906 beta

    F75383

    Abstract: F75393 2n3906 beta 2n3906 equivalent F75384 F75393 S 2N3906 thermal transistor BY395 pnp 2N3906 beta
    Text: F75393 ±1oC Temperature Sensor with ß Compensation Release Date: May, 2008 Revision: V0.16P F75393 F75393 Datasheet Revision History Version Date Page Revision History V0.10P 2007/7/23 - Preliminary Version V0.11P 2007/9/20 - Add register description V0.12P


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    PDF F75393 F75393 F75394 2N3906) 2N3906 2200pF F75383 2n3906 beta 2n3906 equivalent F75384 F75393 S 2N3906 thermal transistor BY395 pnp 2N3906 beta

    cr68

    Abstract: 55HT4 temperature sensor IC CR68 2 IC Temperature Sensors 2N3906 2SB0709 PMBT3906 CR-73
    Text: F75367 F75367 Datasheet ±1oC Temperature Sensor with I2C-SST Bridge Release Date: February, 2008 Revision: V0.11P Feb., 2008 V0.11P F75367 F75367 Datasheet Revision History Version Date Page Revision History V0.10P 2007/12/20 - Preliminary Version. V0.11P


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    PDF F75367 F75367 cr68 55HT4 temperature sensor IC CR68 2 IC Temperature Sensors 2N3906 2SB0709 PMBT3906 CR-73

    bc23 transistor

    Abstract: 100334 BC10 npn transistor
    Text: TMP441 TMP442 www.ti.com . SBOS425A – DECEMBER 2008 – REVISED MARCH 2009 ±1°C TEMPERATURE SENSOR with Automatic Beta Compensation,


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    PDF TMP441 TMP442 SBOS425A OT23-8 OT23-8 TMP442 bc23 transistor 100334 BC10 npn transistor

    Untitled

    Abstract: No abstract text available
    Text: TMP441 TMP442 www.ti.com . SBOS425A – DECEMBER 2008 – REVISED MARCH 2009 ±1°C TEMPERATURE SENSOR with Automatic Beta Compensation,


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    PDF TMP441 TMP442 SBOS425A OT23-8 OT23-8 TMP442

    BC23/12/ba20 transistor

    Abstract: No abstract text available
    Text: TMP441 TMP442 www.ti.com . SBOS425A – DECEMBER 2008 – REVISED MARCH 2009 ±1°C TEMPERATURE SENSOR with Automatic Beta Compensation,


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    PDF TMP441 TMP442 SBOS425A OT23-8 OT23-8 BC23/12/ba20 transistor

    Untitled

    Abstract: No abstract text available
    Text: TMP441 TMP442 www.ti.com . SBOS425A – DECEMBER 2008 – REVISED MARCH 2009 ±1°C TEMPERATURE SENSOR with Automatic Beta Compensation,


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    PDF TMP441 TMP442 SBOS425A OT23-8 OT23-8

    Untitled

    Abstract: No abstract text available
    Text: TMP441 TMP442 www.ti.com . SBOS425A – DECEMBER 2008 – REVISED MARCH 2009 ±1°C TEMPERATURE SENSOR with Automatic Beta Compensation,


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    PDF TMP441 TMP442 SBOS425A OT23-8 OT23-8 TMP442

    transistors BC23

    Abstract: BC23/12/ba20 transistor
    Text: TMP441 TMP442 www.ti.com . SBOS425A – DECEMBER 2008 – REVISED MARCH 2009 ±1°C TEMPERATURE SENSOR with Automatic Beta Compensation,


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    PDF TMP441 TMP442 SBOS425A OT23-8 OT23-8 transistors BC23 BC23/12/ba20 transistor

    2N3904 SOT-23 MARKING CODE

    Abstract: No abstract text available
    Text: TMP441 TMP442 www.ti.com . SBOS425A – DECEMBER 2008 – REVISED MARCH 2009 ±1°C TEMPERATURE SENSOR with Automatic Beta Compensation,


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    PDF TMP441 TMP442 SBOS425A OT23-8 OT23-8 TMP442 2N3904 SOT-23 MARKING CODE

    ERF 2030

    Abstract: HM 1211 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 -IN4I48 ERF 2030 HM 1211

    pnp 2N3906 beta

    Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
    Text: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION


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    PDF 2N3395 2N3396 2N3397 2N3398 2N2926 2N4401 2N4402 2N4403 MPS2713 MPS2714 pnp 2N3906 beta 2n4058 N3904 to-92hs D29E2-J1

    ERF 2030

    Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @10mA V Min. 1 II • m fT Ccb @ 10V - Typical 1 MHz Continuous Max. @ lc (mA) (MHz) Typical (Pp) ImA) 'F E b v ceo Device V CE(sat) Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 -IN4I48 ERF 2030 GES6220

    GES6220

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO -92 PACKAGE Device 'F E bvceo VCE sat Type @10mA(V) Min. Max. @ lc(mA) I I • m 1 GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 NPft


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 QES6004- GES6004: GES6220 GES6001

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device 1 60 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007 GES6010 GES6011 GES6012 GES6013 GES6014


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40LECTOR-BASE ges6007 GES6001 GES6002

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40MBIENT 9ES6003 GES6001 GES6002

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON S IG N A L TRAN SIS TO R S G E N E R A L PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005


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    PDF to-92 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 QES6004- GES6001 GES6002

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 ges6011, 6ES60II GES6001 GES6002

    800-0400

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 VCE (sat) Max. @ lc (m A ) 40 00 00 60


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40LECTOR-BASE GES6007 800-0400 GES6001

    ES5448

    Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40MBIENT 9ES6003 ES5448 GES6220

    2N3901

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES60I GES6014, 2N3901 GES6001

    GES6220

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Type @ 1 0 m A V Min. 1 60 GES5822 NP hl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 GES5828 GES6000 GES6001 GES6002 200 200 120 200 300 40 40 25 25 25 50 00 00 OB 500 800 300 300


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES5447 GES6220 GES6001

    GES6220

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device 1 I I • m 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000 GES6001 GES6002 50 00 00 OB 500 800 300 300 500 GES6003 GES6004 GES6005 GES6006 GES6007 NP» NM mp un PHP


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    PDF to-92 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6220 GES6001

    NPN transistor 2n4400 beta value

    Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
    Text: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN


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    PDF 2N2711 2N2712 2N2924 2N2925 2N2926Â 2N4401 2N4402 2N4403 MPS2713 MPS2714 NPN transistor 2n4400 beta value TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644