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    PN 2222A Price and Stock

    onsemi PN2222ABU

    TRANS NPN 40V 1A TO92-3
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    DigiKey PN2222ABU Bulk 27,266 1
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    onsemi PN2222ATF

    TRANS NPN 40V 1A TO92-3
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    DigiKey PN2222ATF Cut Tape 19,051 1
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    onsemi PN2222ATFR

    TRANS NPN 40V 1A TO92-3
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    DigiKey PN2222ATFR Cut Tape 18,661 1
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    onsemi PN2222ATA

    TRANS NPN 40V 1A TO92-3
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    DigiKey PN2222ATA Ammo Pack 16,000 2,000
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    STMicroelectronics PN2222A

    TRANS NPN 40V 0.6A TO92-3
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    DigiKey PN2222A Bulk 20,000
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    Bristol Electronics PN2222A 769
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    PN 2222A Datasheets (111)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PN2222A AUK 600 mA, NPN Silicon Transistor Original PDF
    PN2222A Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 40V 800MA TO-92 Original PDF
    PN2222A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    PN2222A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    PN2222A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    PN2222A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    PN2222A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    PN2222A Micro Commercial Components NPN General Purpose Amplifier Original PDF
    PN2222A National Semiconductor Bipolar Transistor, NPN General Purpose Amplifier Original PDF
    PN2222A NXP Semiconductors PN2222A - NPN switching transistor - Complement: PN2907A ; fT min: 300 MHz; hFE max: 300 ; hFE min: 100 ; IC max: 600 mA; Polarity: NPN ; Ptot max: 500 mW; toff: 250 ns; VCEO max: 40 V Original PDF
    PN2222A On Semiconductor General Purpose Transistor Original PDF
    PN2222A On Semiconductor General Purpose Transistors Original PDF
    PN2222A On Semiconductor PN2222 - TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN, BIP General Purpose Small Signal Original PDF
    PN2222A Philips Semiconductors Small-signal Transistors Original PDF
    PN2222A Philips Semiconductors NPN switching transistor Original PDF
    PN2222A ROHM NPN Medium Power Transistor (Switching) Original PDF
    PN2222A Sinyork Mini size of Discrete semiconductor elements Original PDF
    PN2222A STMicroelectronics SMALL SIGNAL NPN TRANSISTOR Original PDF
    PN2222A STMicroelectronics SMALL SIGNAL NPN TRANSISTOR Original PDF
    PN2222A Taitron Components NPN General Purpose Transistor Original PDF

    PN 2222A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2222A fairchild

    Abstract: 22222a 2222a sot223 PN2222ABU SOT-23 EBC 2222A to-92 npn PN2222ANLbu
    Text: MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Mark:1P EBC C SOT-223 B B NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. Absolute Maximum Ratings * Ta=25°C unless otherwise noted


    Original
    PDF PN2222A MMBT2222A PZT2222A OT-23 OT-223 500mA. PN2222A O-92-3 PN2222ABU PN2222ANLBU 2222A fairchild 22222a 2222a sot223 SOT-23 EBC 2222A to-92 npn

    2N2222

    Abstract: PN2222 2N2222A 2N2222 pnp 2N2222-PN2222 FN2222A 2n2222 micro electronics PN2222A le PN2222A 2N2222 power
    Text: 2N2222 PN 2222 2 N 2222A PN 2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.


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    PDF 2N2222 PN2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, 2N2907, 2N2907A, 2N2222 pnp 2N2222-PN2222 FN2222A 2n2222 micro electronics PN2222A le 2N2222 power

    transistor pn 2222a

    Abstract: transistor 2222a to-92 marking EB 202 transistor
    Text: PN2907A PNP SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction KM hM Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available PN 2222A TO-92


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    PDF PN2907A IL-STD-202, -15mA -50mA -50mA -150mA -500mA -50mA, 100MHz transistor pn 2222a transistor 2222a to-92 marking EB 202 transistor

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    st2222a

    Abstract: RXT2222A st 2222A transistor 2222a transistor 2222a to-92 r1p 11 TRANSISTOR sst2222a pn 2222a
    Text: Transistors I NPN Medium Power Transistor Switching UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A •Features •External dimensions (Units : mm) 1 } B V ceo< 4 0 V ( ¡c ~ 1 0 rn A ) 2 ) Com plem ents the U M T 2907A /S ST2907A /M M ST2907A /RXT2907A/PN 2907A.


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    PDF 2222A/SST2222A/MMST2222A/RXT2222A/PN2222A ST2907A /RXT2907A/PN UMT2222A SST2222A MMST2222A RXT2222A PN2222A T2222A st2222a st 2222A transistor 2222a transistor 2222a to-92 r1p 11 TRANSISTOR pn 2222a

    ses 554

    Abstract: SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R
    Text: sw itching transistors transistors de commutation Types N PN THOMSON-CSF M axim u m ratings PNP Characteristics at 25 °C p totl V c E O h21E min (mW •c @ VCE(sat) @ Ic / 'B max (V) max (V) Im A ) (m A) C 22b *T m in max (M H z) (pF) B S V 52(R) 200 12


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    PDF 2369IR) ses 554 SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R

    LB121A

    Abstract: TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV
    Text: s * hu tt s o m n iB J U f tic « » * a * B D » o r b d s t » In addition to our own products, we supply the following products in JAPAN. TRANSISTOR, LINEAR 1C ' J M S S M A L L NPN N U M B ER PN P or IVD— SIGNAL TRANSISTORS MAXIMUM R ATIN G S HSM C


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    PDF BT1815 HMBT1Q15 BT2222A BT2907A HBC807 BC817 BT5087 BT5088 BT8050 BT8550 LB121A TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV

    TT 2222 npn

    Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
    Text: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904


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    PDF 2N708 2N709 2N753 000000000000a l000000 T0-18 TT 2222 npn 709a 2n h 2222a 2N698 2222 NPN

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    PDF

    BT2222A

    Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929
    Text: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.


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    PDF BT929 2N929 BT930 2N930 BT2483 2N2483 BT2484 2N24B4 BT2604 2N2604 BT2222A BT2222 2N2222 BT3501 BT51 2N2708 2N2944

    CV7756

    Abstract: bc300 equivalent BFY50 equivalent 2N2222 npn small signal current gain BC142 equivalent CV7765 bfy51 equivalent CV7735 cv7766 2n1613 equivalent
    Text: Discrete Semiconductors T e x a s In s t r u m e n t s Absolute Maximum Rating h F E at Collector Current CV Number Commercial Case Equivalent Outline Polarity V C B VCE V V V e b hFE hFE Ic Min. fT MHz Converted to B S 9 3 0 0 Small Signal Planar CV continued


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    PDF CV7722 bfy50 CV7723 BFY51 CV7724 BFY52 CV7725 CV7726 CV7756 bc300 equivalent BFY50 equivalent 2N2222 npn small signal current gain BC142 equivalent CV7765 bfy51 equivalent CV7735 cv7766 2n1613 equivalent

    SY 360 05

    Abstract: BT2222A 2n22 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A
    Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


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    PDF 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 BT2946 2N2946 SY 360 05 BT2222A 2n22

    fairchild 2N2222A

    Abstract: 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222
    Text: •FAIRCHILD SEMICONDUCTOR 7 fl4 DlF| 3 4 ^ b 7 4 ~ 0 0 E 7 S 0 4 S 3469674 FAIRCHILD SEMICONDUCTOR m m as&i\ f a i^ urn ram h i^ 84D 27504 2N 718A 2N 1613 T - ^ - D H ¿3 A Schlumberger Company NPN Small Signal General Purpose Am plifiers • • Vceo . . . 32 V Min


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    PDF QDE75D4 2N718A 2N1613 fairchild 2N2222A 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222

    2N1026

    Abstract: 2N1025 2N328A 2N760A 2N2708 2N327A 2N327B 2N328B 2N329A 2N329B
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 2N1026 2N1025 2N2708

    2N3134

    Abstract: 2N3135 2N3136 2N3250 2N3250A 2N3251A 2N3299 2N3300 2N3302 BT2907A
    Text: Transistors Cont. Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Maxim um Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C V c b VCE V e b Volts Volts Volts V C E (Sat) lc /l„ H f e @ >C Min/Max mA Volts m A/m A


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    PDF 2N3134 2N3135 2N3136 2N3250 2N3250A 2M3251 2N3251A BT2946 2N2946 BT3999 2N3299 2N3300 2N3302 BT2907A

    NPN transistor 2n2222A

    Abstract: 2N2708 2N1132A 2N1132B 2N2217 2N2218 2N2218A 2N2219 2N2219A 2N2220
    Text: Discrete Devices Transistors Cont. Medium Current, High-Speed Amplifiers Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF Max


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    PDF 2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A BT2946 2N2946 BT3999 NPN transistor 2n2222A 2N2708 2N2219 2N2219A 2N2220

    NPN 2907A EBC

    Abstract: 2907A EBC 2222a pn
    Text: small Signal Transistors TO-92 Case Continued TO-92 T Y P E MO, F A M IL Y LEA D CODE VC B O v CEO v EBO (V) 00 MW *^ C 6 S U ftf MU'! IliN ipstf* *e s 8 "fe w m * WS; •CBO s* V C BC - m • V c s *» c W (V ) MN ' - m (*A ) v C E fS A K > « * C 00 (« A )


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    PDF PN3S63 PN3564 PN3565 PN3566 PN3567 PN3568 PN3569 PN3638A PN3639 PN3640 NPN 2907A EBC 2907A EBC 2222a pn

    equivalent transistor 2N1711

    Abstract: MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708 2N706A
    Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


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    PDF 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 BT2946 2N2946 equivalent transistor 2N1711 MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708

    equivalent transistor 2N1711

    Abstract: 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package 2N328A transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 equivalent transistor 2N1711 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR

    EQUIVALENT TRANSISTOR bc109c

    Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor

    JAN2N2222A

    Abstract: Q002 complementary npn-pnp 2N2222A 026 2N2907A surface mount Power Transisitor 100V 2A Transistor 2N2222A 2N2222A 2N2907A HCT700
    Text: OPTEK Product Bulletin HCT700 May 1993 Surface Mount NPN/PNP Complementary Transistors Type HCT700 Features • C e ra m ic surface mount package • Miniature package to minimize circuit board area • Electrical performance sim ilar to 2 N 2222A and 2N 2 9 0 7 A


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    PDF HCT700 HCT700 2N2222A 2N2907A MIL-S-19500 JANTX2N4854U) Q00233S JAN2N2222A Q002 complementary npn-pnp 2N2222A 026 2N2907A surface mount Power Transisitor 100V 2A Transistor 2N2222A 2N2907A

    2sd 5023

    Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    PDF -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945

    2sd 5023

    Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    PDF 13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345

    2n 2222A 3904

    Abstract: No abstract text available
    Text: DGG7423 ^ 2 •RHU TO-92 JEDEC Standards Numbers • N P N Transistors General purpose small signal amplifiers B V Ebo Min. ICBO Vbe (sat) Max. Cob Max. fr Min. @ Ic 10pF 160MHz Typ. B V qbo Min. BV ceo Min. 2N 2925 TO-92 (ECB) 25V 25V 5V 100nA 25V 235 470


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    PDF DGG7423 160MHz 100nA 2N3711 MPS3711 90MHz MPS-A65 100nA 2n 2222A 3904