PLCC34P Search Results

Contextual Info: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs

k 0355

Abstract: 32-PIN DS1745Y-150 DS1745Y-200
Contextual Info: DS1745Y DS1745Y 3–Volt Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 32 VCC A16 2 31 A15 A14 3 30 NC A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE A2 10 23 A10 A1 11

Contextual Info: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc Vcc • Data is automatically protected during power loss WE • Directly replaces 32K x 8 volatile static RAMs or EEPROMs

Contextual Info: DS1750Y DALLAS SEMICONDUCTOR DS1750Y 3-Volt Partitionable 4096K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 I| 1 321 A16 I1 311 A15 • Data is automatically protected during power loss A14 I1 301

32-PIN

Abstract: DS1750Y-150 DS1750Y-200
Contextual Info: DS1750Y DS1750Y 3–Volt Partitionable 4096K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE A2 10 23 A10 • 2.7 volt to 3.6 volt operation

Contextual Info: DS1745Y DALLAS SEMICONDUCTOR DS1745Y 3-Volt Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss NC | 1 321 A16 1 2 311 I A15 A14 1 3

32-RN

Abstract: 34-PIN
Contextual Info: DS1750Y DALLAS DS1750Y 3-Volt Partitionable 4096K NV SR A M SEMICONDUCTOR FEA TU RES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 512K x 8 volatile static RAM

EEPROM 28256

Abstract: smt LDR 34-PIN
Contextual Info: DS1730Y DALLAS SEMICONDUCTOR DS1730Y 3-V olt Partitionable 256K NV SRAM PIN ASSIGNM ENT FEATURES • 10 years minimum data retention in the absence of external power v cc WE • Data is automatically protected during power loss A13 • Directly replaces 32K x 8 volatile static RAM or

EEPROM 28256

Abstract: DS1730Y-150 DS1730Y-200
Contextual Info: DS1730Y DS1730Y 3–Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM

pfo 131

Abstract: smt LDR 32-PIN 34-PIN 2BL4
Contextual Info: DS1745Y DALLAS DS1745Y 3-Volt Partitionable 1024K NV SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc A15 • Data is automatically protected during power loss NC WE • Directly replaces 128K x 8 volatile static RAM

5bl41

Contextual Info: DS1730Y DALLAS SEMICONDUCTOR DS1730Y 3-V olt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAM or