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    PL SOT223 Search Results

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    Untitled

    Abstract: No abstract text available
    Text: FAX# 408 944-0970 TITLE 3 LEAD SOT223 PACKAGE OUTLINE & RECOMMENDED LAND PATTERN DRAWING # SOT223-3LD-PL-1 Rev A ECN 013112HC08 Originator S. YEH Change New release UNIT MM Reason New


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    PDF OT223 OT223-3LD-PL-1 013112HC08

    TSB1G7000-E

    Abstract: CL21B105KONE TM162JCAWG1 GMC21X7R104K50NTLF DC-003-250 CL21B105 TSB1G7000 GMC21X7R104K50NT ECS-80-20-5PX-DN AXJ115301S
    Text: KEY Microchip Technology Incorporated 2355 W. Chandler Blvd. Chandler, AZ 85224-6199 CR: Cross CS: Consign PL: Pack List ASSEMBLY NUMBER: 12-00723 REV: 7 ASSEMBLY NAME: FINAL ASSY, EXPLORER 16 DEVELOPMENT BOARD Qty Part Number Rev D: Drawing B: BOM LBL: Label


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    PDF DS30030 DS51282 DS30210 dsPIC33 PIC24F DS51588 CAB0003 RS-232 TSB1G7000-E CL21B105KONE TM162JCAWG1 GMC21X7R104K50NTLF DC-003-250 CL21B105 TSB1G7000 GMC21X7R104K50NT ECS-80-20-5PX-DN AXJ115301S

    trailing edge dimmer mosfet diac

    Abstract: LNK457DG Leviton 6615 Leviton tape 3m 9448 3m 9448 SNX-R1536 EE16 pc40 smd transistor 43t RM34DMA
    Text: Title Specification Application Reference Design Report for a 5 W Dimmable Power Factor Corrected LED Driver NonIsolated Using LinkSwitchTM-PL LNK457DG 90 VAC – 265 VAC, >0.9 PF Input; 12 V – 18 V, 350 mA 10% Output LED Driver for A19 Incandescent Lamp


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    PDF LNK457DG RDR-251 trailing edge dimmer mosfet diac LNK457DG Leviton 6615 Leviton tape 3m 9448 3m 9448 SNX-R1536 EE16 pc40 smd transistor 43t RM34DMA

    GL949

    Abstract: Ic55A
    Text: CORPORATION GL949 Description ISSUED DATE :2006/11/20 REVISED DATE : PNP SI L I CO N PL AN AR HI G H C URRE NT T RANSI ST O R The GL949 is designed for general purpose switching and amplifier applications. Features 6Amps continuous current, up to 20Amps pulse current


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    PDF GL949 GL949 20Amps OT-223 Ic55A

    "Silicon Controlled Rectifier"

    Abstract: igniter ignitor 107M TICC107MR-S
    Text: CO M PL IA NT TICC107M *R oH S SILICON CONTROLLED RECTIFIER TICC107M Silicon Controlled Rectifier 1 A RMS On-State Current Glass Passivated Wafer 600 V Off-State Voltage IGT 50 µA min, 200 µA max. SOT-223 Package Top View Description The TICC107M is a sensitive gate SCR designed for switching


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    PDF TICC107M TICC107M OT-223 MD-SOT223-001-a "Silicon Controlled Rectifier" igniter ignitor 107M TICC107MR-S

    Untitled

    Abstract: No abstract text available
    Text: CO M PL IA NT TICC107M *R oH S SILICON CONTROLLED RECTIFIER TICC107M Silicon Controlled Rectifier 1 A RMS On-State Current Glass Passivated Wafer 600 V Off-State Voltage IGT 50 µA min, 200 µA max. SOT-223 Package Top View Description The TICC107M is a sensitive gate SCR designed for switching


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    PDF TICC107M OT-223 MD-SOT223-001-a OT-223

    GL1501A

    Abstract: No abstract text available
    Text: CORPORATION ISSUED DATE :2006/11/20 REVISED DATE : GL1501A NPN SI L I CO N PL AN AR MEDI UM PO W ER HI G H G AI N T RANSI ST O R Description The GL1501A is designed for general purpose switching and amplifier applications. Features 5 Amps continuous current, up to 10Amps pulse current


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    PDF GL1501A GL1501A 10Amps OT-223

    GL9401A

    Abstract: No abstract text available
    Text: CORPORATION ISSUED DATE :2006/11/20 REVISED DATE : GL9401A NPN SI L I CO N PL AN AR MEDI UM PO W ER HI G H G AI N T RANSI ST O R Description The GL9401A is designed for general purpose switching and amplifier applications. Features 5 Amps continuous current, up to 20Amps pulse current


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    PDF GL9401A GL9401A 20Amps OT-223

    GL9411A

    Abstract: No abstract text available
    Text: CORPORATION ISSUED DATE :2006/11/20 REVISED DATE : G L 9 4 11 A PNP SI L I CO N PL AN AR MEDI UM PO WE R HI G H G AI N T RANSI ST O R Description The GL9411A is designed for general purpose switching and amplifier applications. Features 4 Amps continuous current, up to 10Amps pulse current


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    PDF GL9411A 10Amps OT-223 GL9411A

    Untitled

    Abstract: No abstract text available
    Text: Si 3 4 6 0 - EVB Si3460 E VALUATION B OARD U SER ’ S G U I D E 1. Introduction This document is intended to be used in conjunction with the Si3460 data sheet for designers interested in: An Pl No ea t se Re C com on si me de n r S de i3 d f 46 or 2 N


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    PDF Si3460 Si3460-EVB

    tsop 338

    Abstract: No abstract text available
    Text: Assembly Base List PACKAGE TSSOP-8 SOD-323 SOT-323 SOT-23 SC-59 SOT-89 SIP-3 SIP-4 SOT-25 SOT-26 TSOP-5 TSOP-6 SOT-28 SOT-223 SOP-5/7/8/10 SOP-8Expose SSOP-14 PL-4/S-4 TO-92 P-DIP-8 P-DIP-14/16 MSOP-8 MSOP-10 TO-220/262/263-3/5 TO-251/252 TO-220/263-3 TO-251/252


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    PDF OD-323 OT-323 OT-23 SC-59) OT-89 OT-25 OT-26 OT-28 OT-223 OP-5/7/8/10 tsop 338

    BFU590G

    Abstract: No abstract text available
    Text: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium


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    PDF BFU590G OT223 BFU590G AEC-Q101 BFU590GX

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium


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    PDF BFU590G OT223 BFU590G AEC-Q101

    bgy113f

    Abstract: BGY113E SOT321 RF Power Modules BGY113G BGY204 BGY113B BGY133 SOT246 SOT342
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Modules and Transistors for Mobile Phones 1996 Jun 19 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones Selection guide VHF CAR MOBILE


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    PDF OT132B BGY143 BGY132 BGY133 BGY135 to174 bgy113f BGY113E SOT321 RF Power Modules BGY113G BGY204 BGY113B BGY133 SOT246 SOT342

    SMD TRANSISTOR L6

    Abstract: BLT80 philips Trimmer 60 pf KM10 KM10 transistor SMD ic catalogue smd transistor zi MRA775 L5 smd transistor TRANSISTOR SMD L3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 File under Discrete Semiconductors, SC08b 1996 May 02 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation


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    PDF BLT80 SC08b OT223 OT223 MAM043 SMD TRANSISTOR L6 BLT80 philips Trimmer 60 pf KM10 KM10 transistor SMD ic catalogue smd transistor zi MRA775 L5 smd transistor TRANSISTOR SMD L3

    TRANSISTOR BD139

    Abstract: smd transistor L6 philips power transistor bd139 bd139 application note UHF TRANSISTOR bd139 smd BD139 transistor L6 smd transistor TRANSISTOR SMD catalog RF POWER TRANSISTOR NPN
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT70 UHF power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLT70 FEATURES • Very high efficiency • Low supply voltage.


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    PDF BLT70 SC08b OT223H OT223H MAM043 TRANSISTOR BD139 smd transistor L6 philips power transistor bd139 bd139 application note UHF TRANSISTOR bd139 smd BD139 transistor L6 smd transistor TRANSISTOR SMD catalog RF POWER TRANSISTOR NPN

    TRANSISTOR CATALOGUE

    Abstract: UHF TRANSISTOR bd139 smd philips power transistor bd139 bd139 application note L6 TRANSISTOR SMD TRANSISTOR L6 BD139 BD139 application power transistor bd139
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT70 UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLT70 FEATURES • Very high efficiency • Low supply voltage. 4 handbook, halfpage APPLICATIONS


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    PDF BLT70 OT223H OT223H MAM043 TRANSISTOR CATALOGUE UHF TRANSISTOR bd139 smd philips power transistor bd139 bd139 application note L6 TRANSISTOR SMD TRANSISTOR L6 BD139 BD139 application power transistor bd139

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BLT70 UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLT70 FEATURES • Very high efficiency • Low supply voltage. 4 handbook, halfpage APPLICATIONS • Hand-held radio equipment in common emitter class-AB


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    PDF BLT70 OT223H OT223H MAM043

    AMS1117 equivalent

    Abstract: AMS1117 3.3V circuit diagram CS8810 Myson Century cs GPIO14 ep3can
    Text: CS8810 General Purpose USB 1.1-to-ATA/ATAPI Bridge Controller FEATURES continued The CS8810 is a single chip general-purpose USB controller, which integrates USB 1.1 compliant transceiver. Together with product dependent firmware and software driver, this chip is able to fulfill


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    PDF CS8810 CS8810 220uF AMS1117/SOT-223 93LC46 100-pin AMS1117 equivalent AMS1117 3.3V circuit diagram Myson Century cs GPIO14 ep3can

    SMD Code 12W SOT23

    Abstract: 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc
    Text: SMD Transistors SOT-89 Case 1.2W TYPE NO. CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 CXT5551 CXTA14 CXTA42 CXTA64 CXTA92 DESCRIPTION NPN HIGH CURRENT PNP HIGH CURRENT NPN AMPL'SWITCH PNP AMPt/SWITCH NPN HIGH CURRENT NPN AM PL/SWITCH


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    PDF OT-89 CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 SMD Code 12W SOT23 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc

    C-0120

    Abstract: No abstract text available
    Text: T F TMos Package Outlines - A - ► \ 1 C 1 i I t T t- E - * l •*— D 2 PL I s e a t in g p la n e NOTES. 1. DIM ENSIONING AND TOLERANCING PER ANSI Y14 5M, 1982 2 CONTROLLING DIMENSION INCH 3. ALL RULES AND NOTES ASSOCIATED WITH STYLE 3. PIN 1 GATE


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    PDF T0-204AA C-0120

    BFG591 amplifier

    Abstract: BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide bf763 S0T343
    Text: Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE fT / l c CURVE (see Fig.1 ) LEADED SOT54 SURFACE-MOUNT SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 (2) BF747 BF547 BF547W BFS17


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    PDF BF689K BF763 BFT25 BF747 BF547 BFS17 BFS17A BFR53 BFQ17 BFG17A BFG591 amplifier BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide S0T343

    BLY32

    Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
    Text: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors


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    PDF OM3016 OM3026 OM925 OM925 OM975 OM976 BFQ231 BFQ231A BFQ251 BLY32 blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier

    transistor tt 2222

    Abstract: smd 809 x transistor transistor SMD S33
    Text: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures


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    PDF 0DSfl737 BLT50 OT223 bbS3R31 0DS87M3 transistor tt 2222 smd 809 x transistor transistor SMD S33