PJ4N Search Results

PJ4N

Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.0V,IDS@10mA=5.0 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@2.5V,IDS@1mA=7.0 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.030(0.75) 0.021(0.55)

Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance 0.010(0.25) • The MOSFET elements are independent,eliminating interference

Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@2.5V,IDS@1mA=7.0 • RDS(ON), VGS@4.0V,IDS@10mA=5.0 • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference

PJ4N

Abstract: PJ4N3KDW MARKING GA SOT-363 DM800
Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@2.5V,IDS@1mA=7.0Ω • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference

PJ4N

Abstract: marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW
Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance

HF99

Abstract: NS102 NEC 2561 inductive proximity sensor pj5n PJ6N PJ 956 PE 4100 Nippon capacitors pci express tlp
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

F2117LP

Abstract: PJ6N pj5n pj7n 213 1300 PJ3N r4f2117 F2117 KD 502 KBU 106
Contextual Info: REJ09B0350-0200 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2117Group Hardware Manual

r4f2117

Abstract: F2117 F2117LP 8086 convertion from decimal to binary program GSM modem M10 f2117lp20v BGA PACKAGE OUTLINE PJ6N gsm modem sim 900 IER16
Contextual Info: REJ09B0350-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2117Group Hardware Manual

R4F2113

Abstract: r4f2113nft PJ4N P237T P-LFBGA-176 H8S 2377 BBR13 R4F2113NBG
Contextual Info: User's Manual H8S/2113 Group 16 User’s Manual: Hardware Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2113 R4F2113 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is

F2117LP

Abstract: R4F2117 FZTAT256V3A transistor daa 40 470 D10 Nippon capacitors
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ic cir 2272

Abstract: cir 2272 C-MAC 10MHz a1 F2117 H8S/2117 KD 472 M ic tlp 759 TLP-145V 8086 convertion from decimal to binary program MS7 package
Contextual Info: REJ09B0452-0100 16 H8S/2117R Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2117R R4F2117R All information contained in this material, including products and product specifications at the time of publication of this material, is subject to change by