s12xd-family
Abstract: 001C AN11 AN13 AN15 PAD20 S12X
Text: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12XDP512PIMV2/D Freescale Semiconductor, Inc. PIM_9XDP512 Port Integration Module Block Guide V02.02 Original Release Date: 14 May 2004 Revised: 30 Jul 2004 Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its
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S12XDP512PIMV2/D
9XDP512
9XDP512
s12xd-family
001C
AN11
AN13
AN15
PAD20
S12X
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s12xd-family
Abstract: AN11 AN13 AN15 PAD20 S12X pj74
Text: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12XDP512PIMV1/D Freescale Semiconductor, Inc. PIM_9XDP512 Port Integration Module Block Guide V01.02 Original Release Date: 03 Feb 2004 Revised: 25 Jun 2004 Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its
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S12XDP512PIMV1/D
9XDP512
9XDP512
s12xd-family
AN11
AN13
AN15
PAD20
S12X
pj74
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SDHC PINOUT
Abstract: SDHC specification 9S12UF32 SDHC MECHANICAL SDHC memory reader PS3 usb sony ca6E MC9S12UF32 9S12UF32DGV1 0300-03FF
Text: MC9S12UF32 System on a Chip Guide V01.05 Original Release Date: 17 JAN 2002 Revised: 03 Dec 2004 TSPG - 8/16 Bit MCU Design, HKG Freescale Semiconductor, Inc. This product has been designed for use in “Commercial” applications. Please see a description below.
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MC9S12UF32
64-pin
9S12UF32DGV1/D
SDHC PINOUT
SDHC specification
9S12UF32
SDHC MECHANICAL
SDHC memory reader
PS3 usb sony
ca6E
MC9S12UF32
9S12UF32DGV1
0300-03FF
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Magnetic Field Sensor FLC 100
Abstract: CL02A400T MC1A310AT g85 wafer 12 volt electronic ballast for xenon light RJ45-B act ge 106 18p IEC61009-1 gec switchgear DDICE60
Text: Product Catalogue 2013 Circuit Breakers Contactors & Overloads Motor Protection Photovoltaic Fusegear Weatherproof Switchgear Isolators & Switching Relays & Timers Pilot Devices Metering Enclosures Cable Accessories Surge & Safety Lighting CONTENTS: IPD Industrial Products is a proudly Australian owned
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1l40k
Abstract: 3L40K MSCAN Block User Guide, MC9S12DG128 v02 mark MC9S12DJ128E MC9S12DT128 MC9S12DT128E HCS12 MC9S12DB128 MC9S12DG128
Text: DOCUMENT NUMBER 9S12DT128DGV2/D MC9S12DT128 Device User Guide V02.08 Covers also MC9S12DT128E, MC9S12DG128E, MC9S12DJ128E, MC9S12DG128, MC9S12DJ128, MC9S12DB128 Original Release Date: 18 June 2001 Revised: 26 February 2003 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or
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9S12DT128DGV2/D
MC9S12DT128
MC9S12DT128E,
MC9S12DG128E,
MC9S12DJ128E,
MC9S12DG128,
MC9S12DJ128,
MC9S12DB128
80-pin
MC9S12DT128
1l40k
3L40K
MSCAN Block User Guide, MC9S12DG128
v02 mark
MC9S12DJ128E
MC9S12DT128E
HCS12
MC9S12DB128
MC9S12DG128
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L40K
Abstract: MC9S12D128 9DTB128 PAD08 LSTR 0L40K
Text: DOCUMENT NUMBER 9S12DT128DGV2/D MC9S12DT128 Device User Guide V02.06 Covers also MC9S12DG128, MC9S12DJ128, MC9S12DB128 Original Release Date: 18 June 2001 Revised: 06 November 2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or
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9S12DT128DGV2/D
MC9S12DT128
MC9S12DG128,
MC9S12DJ128,
MC9S12DB128
80-pin
L40K
MC9S12D128
9DTB128
PAD08
LSTR
0L40K
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MOTOROLA 4L40K
Abstract: 1l40k 3L40K 4l40k MSCAN Block User Guide MC9S12DT128 4L40K Motorola Scalable CAN Module SPI Block Guide v04 EE13 core AM2 Processor Functional Data Sheet
Text: DOCUMENT NUMBER 9S12DT128DGV2/D MC9S12DT128 Device User Guide V02.12 Covers also MC9S12DT128E, MC9S12DG128E, MC9S12DJ128E, MC9S12DG128, MC9S12DJ128, MC9S12DB128, MC9S12A128, SC515846, SC515847, SC515848, SC515849 Original Release Date: 18 June 2001 Revised: 06 Dec 2004
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9S12DT128DGV2/D
MC9S12DT128
MC9S12DT128E,
MC9S12DG128E,
MC9S12DJ128E,
MC9S12DG128,
MC9S12DJ128,
MC9S12DB128,
MC9S12A128,
SC515846,
MOTOROLA 4L40K
1l40k
3L40K
4l40k
MSCAN Block User Guide
MC9S12DT128 4L40K
Motorola Scalable CAN Module
SPI Block Guide v04
EE13 core
AM2 Processor Functional Data Sheet
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1L59W
Abstract: 4l40k 3L40K MC9S12D128 S12FTS128KV2 0L94R MC9S12DJ128 MOTOROLA 4L40K 1l40k MC9S12A128
Text: MC9S12DT128 Device User Guide Covers MC9S12DT128E, MC9S12DG128E, MC9S12DJ128E, MC9S12DG128, MC9S12DJ128, MC9S12DB128, MC9S12A128, SC515846, SC515847, SC515848, SC515849, SC101161DT, SC101161DG, SC101161DJ, SC102202, SC102203, SC102204, SC102205 HCS12 Microcontrollers
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MC9S12DT128
MC9S12DT128E,
MC9S12DG128E,
MC9S12DJ128E,
MC9S12DG128,
MC9S12DJ128,
MC9S12DB128,
MC9S12A128,
SC515846,
SC515847,
1L59W
4l40k
3L40K
MC9S12D128
S12FTS128KV2
0L94R
MC9S12DJ128
MOTOROLA 4L40K
1l40k
MC9S12A128
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KJE 17 transistor
Abstract: transistor k 2628 kje t2 KJE u5 transistor et 454 sd774 l0534 pj 0286 n 332 ab KJE transistor
Text: SEC j h = 7 ? Silicon T ra n sisto r 2SB734 + U h =7 > i> 7 5 PN P Silicon Epitaxial Transistor Audio Frequency Power Amplifier o YA o T "Pj 7°^oo i 7 > Unit : mm c- \ , ft i t EE T"t~ o P T = 1 .0 W, V C E 0 = — 50 V b =i> 7°') 9 > 9 Q 2SD 774 P A C K A G E D IM EN SIO N S
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Q2SD774
KJE 17 transistor
transistor k 2628
kje t2
KJE u5
transistor et 454
sd774
l0534
pj 0286
n 332 ab
KJE transistor
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NEC C959
Abstract: c959 2SA733 TEM-516 transistor tt 2170 TRANSISTOR GF 507 2sc945-c transistor 2sa733 PA33 M 9619
Text: <£> O 7 1 I SJ OO o to CJ1 I Cs5 ~0 o I*l oo to o o 13 Pt Fit Pi H in V U V I <y> o o I0 M PJ oo I1 ? ' o ? .< MIt 0„ °K II oCcO II 1 O < m II o i- k T$ Fit PS HHh oC a< 5 pi D- PI m Cod OPI< II 1 cr> o < a< m II 1 cn o < rT II u o 3 > sX N CT1 •f*.
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2SA733
o2SC9451
SC-43B
T108-01
SI-Tg17#
NEC C959
c959
2SA733
TEM-516
transistor tt 2170
TRANSISTOR GF 507
2sc945-c
transistor 2sa733
PA33
M 9619
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P-111
Abstract: SN74ALS679
Text: SN74ALS679 12-BIT ADDRESS COMPARATORS 02661, JU N E 1982 - REVISED M A Y 1986 » Dependable Texas Instruments Quality and Reliability T SN 74ALS679 . d e scrip tio n T he 'A L S 6 7 9 ad d re ss com parators simplify a d d re ssin g of m em ory b oard s and/or other
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SN74ALS679
12-BIT
D2661,
MAY1986
ALS679
20-bit
P-111
ALS139
I0000
P-111
SN74ALS679
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2SB624
Abstract: 2SD596 F50450
Text: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)
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100mA)
2SB624
PWS10ms,
2SD596
F50450
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transistor f630
Abstract: A-RV06 SI11E XR 2271 JTS03 sl 0565 r JT MARKING F630 h082 transistor bf 244
Text: NEC z r — S7 • S'— h C o m p o u n d T ra n sisto r FA1L3M Îâ iJ t F * 3 Îic N P N x b 0^ + ' > T ; P ^ ' > ' ; z ] > h ^ ^ X ^ ! $ « ^ - ÎÈ o / M T x f f i i Æ I mm 2.8 + 0.2 ÿ f l l L t i ^ t o 0.65- 1.5 (Ri = 4.7 k£2, R2= 4.7 kQ) o FN1L3M ¿ 3 > 7 i ) / / ^ ' J TWffl f S j t
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31NPNX
PWS10
CycleS50
transistor f630
A-RV06
SI11E
XR 2271
JTS03
sl 0565 r
JT MARKING
F630
h082
transistor bf 244
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2SD1780
Abstract: CE 2711 TRANSISTOR 6015 2SD178
Text: 2SD1780 S ilic o n T r a n s is to r N P N i + W Ì : mm 4# i t 7 i t — ^ /} - - o i h FE- ü L ^ i { â V CE(sat)f 1 - i 0 f ' r - ]) > b > Y ÿ > :J X ÿ c o m m t L x M M T t 0 hFE=800~3200 (at VCE= 5.0 V, Ic = 1.0 A) V,CE(sat) = 0.2 V TYP. (at Ic = 1.0 A, IB= 10 mA)
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2SD1780
2SD1780
CE 2711
TRANSISTOR 6015
2SD178
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1S955
Abstract: 2SA1608 T108
Text: NEC j m*=ri\rx A S ilic o n T r a n s is to r _ 2 S A 1 6 8 f2 '>M 3 > PNP i & m ; % 4 I M i s «£ " s ? -> < fm P N P Silicon Epitaxial T ra n sisto r Audio Freq uency A m plifier and S w itching 4# it : mm
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2SA1608
O2SC4173
1S955
2SA1608
T108
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L0742
Abstract: L0742 81 MPA1452H TL08 T460 IC-6338 093L
Text: SEC j m = f T / x r x m 'ê r y < r7 - b ^ X ^ C o m p o u n d P o w e r T ra n s is to r A / N P N l t ° ^ + '> 7 ; ^ / P ij = l > Ï '> A 1 4 5 2 H U>{ I i f f l NPN Silicon Epitaxial Transistor High Speed Switching Industrial Use DC —DC 3 > / < — 9 •V U / 4 Y ■* - ? • U u - • 7 > 7 ° t c
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MPA1452H
13X26X4
L0742
L0742 81
MPA1452H
TL08
T460
IC-6338
093L
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2SC2718
Abstract: 2SA1151 47 HFK 05B2 TL 5551 eu025 PA33 3773 transistor amplifier A0886
Text: NPN Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use Om , \ 7 ^ 7 + > /, Îïl'Â Î'X 100 m A t ' C c n ft Ml 1- -7 "/J1J i t IT lït JIJT ë i t e o ri’óifníf r . T " , hKn' 3 . ' . W f â t L ' C i ' H ÿfïfêig/PACKAGE DIMENSIONS
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2SC2718
2SA1151
Pi078
0878j22
Ki0888
2SC2718
2SA1151
47 HFK
05B2
TL 5551
eu025
PA33
3773 transistor amplifier
A0886
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upa74ha
Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
Text: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )
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uPA74HA
UPA74
PA74H
gw 348
PA74HA
k 2445 transistor
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2sk991
Abstract: 2SK9 ASGA 2sk99
Text: MOS M O S Field Effect P ow er Transistor N - ^ * ; i " N or7— M O S FET I i f f l mm 2SK991 ii, Nf-^*;w^i?'"o,7- M 0 S FET T*. 5 V * « * I C <nf t * tw J : & i £ K ï f t * * » T f é ì ' M x ^ y f > ^ x T O : mm t t . 4.8 MAX. -1.3±0.2 y t '/ ' f
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2SK991
2SK991
2SK9
ASGA
2sk99
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se5020
Abstract: marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM
Text: NEC j m *= rJ Ÿ T X '> I J =3 > b S ilic o n T ra n s is to r A 2SA1464 PNP i k ^ r s ] Ja J /; + y T iP iv 'J =i > h l > ï £> <£ 7 'm PNP Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^ 0 / P A C K A G E DIMENSIONS Unit : mm # * / FEATURES
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2SA1464
2SC3739
se5020
marking R1L
mot-10
2SA1464
2SC3739
2SC373
MECM
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S72 FET
Abstract: 2SK1664 rh10 261717
Text: ^ - 5> • 5/— h M o s M O S F ie ld E ffe c t P o w e r T r a n s is to r 2 S K 1664 N f^ J l//x 9 -M O S FET i i f f l V^T >ÌSÌ/L < , x ^ y f > 7 W m *lSix TU' , it jg X -i -yf- > rmu, DC — DC a >✓-?- ? C i i f t o 2SK1664 i±, N ^ * ; i 4 I S ' ' o,7 - M 0 S F E T
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2SK1664
2SK1664
S72 FET
rh10
261717
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UPD74HC238C
Abstract: js 2617 UPD74HC238G RUJ 17 33 PD74HC238GS n 10221 UPD74HC P16C l0565 PD74HC238G
Text: SEC A m ^ ¡ — 5 ? • 5 / — h M O S jftffi[II]S § MOS Integrated Circuit M ^ T i v r x ¿¿PD74HC238 3-TO-8 LINE DECODER/DEMULTIPLEXER c M o s m it n u fè // P D 7 4 H C 2 3 8 Ü , i t i M C M O S Ì l i p n :s "/ J ~7 r S > <F>— m t L T W f g ? t l t z è C O T , 3 -TO -8 L I N E
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uPD74HC238
484Stfe
UPD74HC238C
js 2617
UPD74HC238G
RUJ 17 33
PD74HC238GS
n 10221
UPD74HC
P16C
l0565
PD74HC238G
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bTI51
Abstract: fsjc F4CJ 2SJ209 TF230
Text: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-
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2SJ209
IEI-620)
bTI51
fsjc
F4CJ
2SJ209
TF230
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pj 0266 iv
Abstract: pd22100 T46C
Text: M O S jfefltlU fê M O S Integrated Circuit / ¿P D 2 2 1 0 0 4 X 4 C R O S S P O I N T S W IT C H W IT H C O N T R O L M E M O R Y c M o s ^PD22100ü 4 to 16 lin e V r = > - y t 16 bit ÿ -y f- h 4 X 4 ? t lt z T i- n ? 'X j -y f-T'tfc ê ^ 3: 161 fiOT f -d ^ X 4 -y& ¿0 |*J 11® ü ✓<-f -f ij A * £0T =? - ^ T 'ü l i f t , S T R O B E A * , D A TA IN A ^ J lz £ ^
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uPD22100
K0836
pj 0266 iv
pd22100
T46C
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