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    PHILIPS FERRITE 4330 Search Results

    PHILIPS FERRITE 4330 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    PHILIPS FERRITE 4330 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Ferrite Rod Antennas for RF-identification Transponders

    Abstract: philips 3C85 ferrite material philips ferrite 4b1 ferrite material 3c85 ferrite rod ANTENNA philips 4b1 ferrite rod philips ferrite core 4b1 ferrite 4b1 ferrite rod rod 4B1
    Text: Application Note Philips Magnetic Products Ferrite Rod Antennas for RF-identification Transponders 0011001010100111010101001110110110 Philips Components Ferrite Rod Antennas for RF-identification Transponders Contents Introduction 2 System configuration 3


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    4330 030 50

    Abstract: 4330 030 3629 4330 030 BDS3 PHILIPS 464s2 philips tube ferrite philips ferrite bead
    Text: Philips Components Magnetic Products SMD Beads SMD Beads PHILIPS COMPONENTS ferrite beads are well known components to suppress unwanted interference. These are supplied as suppression beads to shift on a wire and as beads-on-wire for through-hole mounting on a PCB.


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    PDF MWW001 MWW002 MWW003 4330 030 50 4330 030 3629 4330 030 BDS3 PHILIPS 464s2 philips tube ferrite philips ferrite bead

    4330 030

    Abstract: choke transformer philips 4330
    Text: Philips Components Magnetic Products SMD Common Mode Chokes SMD Common Mode Chokes OPERATING PRINCIPLE Interferences propagating via supply or signal lines can be suppressed by placing a high impedance in series. This can be provided by a ferrite inductor. However, saturation by the supply current can be a problem. Remedies are a low


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    PDF CMS4-11/3/4 MWW004 MWW005 4330 030 choke transformer philips 4330

    ER 2510 type bobbin

    Abstract: philips 3h1 ferrite material philips 3C85 ferrite material E65 core bobbin soft ferrites philips handbook philips RM6 3C85 er28 bobbin E55 core bobbin ETD54 bobbin ETD 34 3c85
    Text: MAIN MAIN MENU MENU SOFT FERRITE PRODUCTS E cores and accessories Planar E cores and accesories EC cores and accessories EFD cores and accessories EP cores and accessories ER cores and accessories ETD cores and accessories P, P/I, PT and PTS cores and accessories + PH cores


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    PDF MSB594 TN12/8/4 TN17/9 TN20/13/6 TN24/15/7 TN27/15/11 TN33/20/11 CBW199 ER 2510 type bobbin philips 3h1 ferrite material philips 3C85 ferrite material E65 core bobbin soft ferrites philips handbook philips RM6 3C85 er28 bobbin E55 core bobbin ETD54 bobbin ETD 34 3c85

    philips ferrite 4b1

    Abstract: philips ferrite core 4b1 ferrit* 3b1 philips 4330 Wideband Chokes 103B1 philips ferrite 4b1 current philips 4b1 ferrite philips ferrite bead
    Text: Philips Components Magnetic Products SMD Wide Band Chokes SMD Wide Band Chokes SMD wide-band chokes are an alternative to a SMD bead when more impedance or damping is required. The design of this product is based on our well known range of through-hole wide-band chokes. In these products the conductor wire is


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    PDF MWW006 MWW007 8/10-3B1 MWW008 8/10-4B1 philips ferrite 4b1 philips ferrite core 4b1 ferrit* 3b1 philips 4330 Wideband Chokes 103B1 philips ferrite 4b1 current philips 4b1 ferrite philips ferrite bead

    4c6 toroids

    Abstract: Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 BLW96 ECO6907 BLW50F blw96 equivalent
    Text: APPLICATION NOTE Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F AN98030 Philips Semiconductors Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F Application note AN98030 CONTENTS 1 PART 1 SINGLE-STAGE WIDEBAND 1.6 − 30 MHz LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96


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    PDF BLW96 BLW50F AN98030 BLW96 4c6 toroids Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 ECO6907 BLW50F blw96 equivalent

    epsilam 10

    Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


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    PDF LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239

    epsilam 10

    Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


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    PDF LFE18500X epsilam 10 BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16

    ir wheel movement sensor

    Abstract: LEI-4 ABS Wheel Speed Sensor eddy current Sensor Gear Wheel Speed Sensor CIRCUIT DIAGRAM for SPEED SENSOR wheel speed sensor gear 70t Ir sensor 3 pin details sensor 13 L
    Text: Philips Semiconductors Preliminary specification Rotational speed sensor KMI10/4 FEATURES PINNING • Digital current output signal PIN DESCRIPTION • Zero speed capability 1 • Wide air gap 2 Vcc V- • Wide temperature range • Vibration insensitive • EMC resistant.


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    PDF KMI10/4 KMI10/4 MBD836 7110fl2b 0CH45m KMI10/4. 7110fl2fci ir wheel movement sensor LEI-4 ABS Wheel Speed Sensor eddy current Sensor Gear Wheel Speed Sensor CIRCUIT DIAGRAM for SPEED SENSOR wheel speed sensor gear 70t Ir sensor 3 pin details sensor 13 L

    B0239

    Abstract: Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor
    Text: Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb - 25 °C in a common emitter class AB.


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    PDF LX1214E500X 100A1201kp B0239 Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor

    j78 transistor

    Abstract: j78 transistor equivalent
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very


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    PDF LLE15180X j78 transistor j78 transistor equivalent

    by239

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16350X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB


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    PDF LLE16350X by239

    Transistor AND DIODE Equivalent list

    Abstract: 100A101kp
    Text: Philips Semiconductors Product specification LLE15370X NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency


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    PDF LLE15370X MBD764 Transistor AND DIODE Equivalent list 100A101kp

    diode BY239

    Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter


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    PDF LXE15450X MLC446 OT439A. diode BY239 bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15

    Transistor AND DIODE Equivalent list

    Abstract: Transistor Equivalent list 40j2* diode MLC436 copper permittivity diode BY239 bd239 equivalent philips ferrite 4b1 BD239 BY239
    Text: Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to T mb = 25 °C in a common emitter class AB.


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    PDF LX1214E500X OT439A. Transistor AND DIODE Equivalent list Transistor Equivalent list 40j2* diode MLC436 copper permittivity diode BY239 bd239 equivalent philips ferrite 4b1 BD239 BY239

    12NC philips diode 93

    Abstract: transistor j7 Transistor Equivalent list 12NC philips chip resistor BDT91 BY239 LLE15180X SC15 POTENTIOMETER AB 10 K
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency


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    PDF LLE15180X OT437A. 12NC philips diode 93 transistor j7 Transistor Equivalent list 12NC philips chip resistor BDT91 BY239 LLE15180X SC15 POTENTIOMETER AB 10 K

    j78 transistor equivalent

    Abstract: Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16045X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides


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    PDF LLE16045X OT437A. j78 transistor equivalent Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15

    diode BY239

    Abstract: Transistor Equivalent list BY239 Transistor AND DIODE Equivalent list philips ferrite 4b1 erie 1250-003 copper permittivity BDT91 LLE15370X SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency


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    PDF LLE15370X OT437A. diode BY239 Transistor Equivalent list BY239 Transistor AND DIODE Equivalent list philips ferrite 4b1 erie 1250-003 copper permittivity BDT91 LLE15370X SC15

    philips ferrite material specifications 12nc

    Abstract: Class E amplifier BDT91 BY239 LLE18150X Tekelec diode
    Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigltated structure provides high emitter efficiency


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    PDF LLE18150X 7110fi5b philips ferrite material specifications 12nc Class E amplifier BDT91 BY239 LLE18150X Tekelec diode

    m 32 ab transistor

    Abstract: mlc444 bd239 equivalent
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated common-emitter structure provides high emitter


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    PDF LXE15450X m 32 ab transistor mlc444 bd239 equivalent

    philips rf choke ferrite

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bbsa^ai 0026766 07T * A P X BLT93/SL b'lE D A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.


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    PDF BLT93/SL OT122D) 7Z24076 7Z24078 philips rf choke ferrite

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bb53^31 DQ28761 715 • IAPX BLT92/SL bTE J> UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.


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    PDF DQ28761 BLT92/SL OT122D)

    diode BY239

    Abstract: Transistor Equivalent list mbab Transistor AND DIODE Equivalent list BY239 fo231 100A101kp FO-231 NPN Silicon Epitaxial Planar Transistor A376
    Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LFE18500X FEA TUR ES Q U IC K R E F E R E N C E DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V SW R


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    PDF LFE18500X 7110fl5b 0DT4307 FO-231. 711002b diode BY239 Transistor Equivalent list mbab Transistor AND DIODE Equivalent list BY239 fo231 100A101kp FO-231 NPN Silicon Epitaxial Planar Transistor A376

    ferrite 4312

    Abstract: SL 100 NPN Transistor
    Text: PHILIPS INTERNATIONAL bSE D 711002b QDbEböS 333 I IPHIN BLT93/SL • A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically fo r class-B operation.


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    PDF 711002b BLT93/SL OT122D) 7Z24076 7Z24077 7Z24078 ferrite 4312 SL 100 NPN Transistor