PHILIPS DATE CODE SOT23 Search Results

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

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Abstract: BBY39
Contextual Info: BBY39 UHF variable capacitance double diode Rev. 02 — 30 June 2004 Product data sheet 1. Product profile 1.1 General description The BBY39 is a variable capacitance double diode with a common cathode, fabricated in planar technology and encapsulated in the SOT23 small plastic SMD package.

BB804

Abstract: smd code marking C8
Contextual Info: BB804 VHF variable capacitance double diode Rev. 03 — 1 July 2004 Product data sheet 1. Product profile 1.1 General description The BB804 is a variable capacitance double diode with a common cathode, fabricated in planar technology and encapsulated in the SOT23 small plastic SMD package.

BAT18

Contextual Info: BAT18 Silicon planar diode Rev. 02 — 31 August 2004 Product data sheet 1. Product profile 1.1 General description Planar high performance band-switching diode in a small rectangular SOT23 SMD plastic package. 1.2 Features • ■ ■ ■ Continuous reverse voltage: max. 35 V

Contextual Info: BAT18 Silicon planar diode Rev. 02 — 31 August 2004 Product data sheet 1. Product profile 1.1 General description Planar high performance band-switching diode in a small rectangular SOT23 SMD plastic package. 1.2 Features • ■ ■ ■ Continuous reverse voltage: max. 35 V

13404

Abstract: PMBT3640
Contextual Info: PMBT3640 PNP 1 GHz switching transistor Rev. 03 — 6 July 2004 Product data sheet 1. Product profile 1.1 General description PNP general purpose switching transistor in a SOT23 package. 1.2 Features • Volume delivery ■ Short lead times ■ Smallest packages.

PMBFJ108

Abstract: PMBFJ109 PMBFJ110 pmbfj108_109_110_
Contextual Info: PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features • High-speed switching ■ Interchangeability of drain and source connections

ST 9340

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23

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Abstract: sot23-4 marking a1 A1 SOT23 marking code E1 sot23 marking code NA sot23 MARKING SOT23 .215 .235 12nc sot23-6 can bus automotive DIODE package sot23 smd marking A1 A.1 SOT23-4
Contextual Info: PESD1CAN CAN bus ESD protection diode in SOT23 Rev. 01 — 25 January 2005 Objective data sheet 1. Product profile 1.1 General description PESD1CAN in small SOT23 SMD plastic package designed to protect two automotive Control Area Network CAN bus lines from the damage caused by ElectroStatic

mrc145

Abstract: MRC147 mrc150 BF556A BF556B BF556C mrc144 MRC149
Contextual Info: BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken

BF861

Abstract: BF861A BF861B BF861C bf861 application
Contextual Info: BF861A; BF861B; BF861C N-channel junction FETs Rev. 04 — 24 September 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against

BF545A

Abstract: BF545B BF545C
Contextual Info: BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken

PESD1CAN

Abstract: PESD1CAN_2
Contextual Info: PESD1CAN CAN bus ESD protection diode in SOT23 Rev. 02 — 17 October 2005 Product data sheet 1. Product profile 1.1 General description PESD1CAN in a small SOT23 Surface Mounted Device SMD plastic package designed to protect two automotive Control Area Network (CAN) bus lines from the damage caused

BAP70-05

Contextual Info: BAP70-05 Silicon PIN diode Rev. 01 — 5 April 2004 Product data sheet 1. Product profile 1.1 General description Two planar PIN diodes in common cathode configuration in a SOT23 small SMD plastic package. 1.2 Features • High voltage; current controlled

RF TRANSISTOR 1.5 GHZ

Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 3 GHZ zo 103 ma Types of Radar 1.2 ghz tuner radar circuit component transistor equivalent table MRA705 RF TRANSISTOR 2.5 GHZ s parameter
Contextual Info: BFR520 NPN 9 GHz wideband transistor Rev. 03 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain

transistor smd ZR

Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA transistor SMD BP smd transistor marking zr smd code marking sot23 philips transistor smd code TRANSISTOR SMD MARKING CODE transistor ZR 08
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Product specification Supersedes data of 1999 May 04 2001 Aug 03 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617J PINNING FEATURES • Power dissipation comparable to SOT23

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Abstract: BBY42 133-8-8
Contextual Info: BBY42 VHF variable capacitance diode Rev. 02 — 1 October 2004 Product data sheet 1. Product profile 1.1 General description The BBY42 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOT23 small plastic SMD package.

all transistor data sheet

Abstract: free download transistor data sheet zo 103 ma CATV amplifier transistor transistor equivalent table RF NPN POWER TRANSISTOR 2.5 GHZ philips satellite systems common emitter amplifier all ic data common collector amplifier circuit designing
Contextual Info: BFR540 NPN 9 GHz wideband transistor Rev. 05 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain

PESDxU1UT

Abstract: pesdxu1 PESD12VU1UT PESD15VU1UT PESD24VU1UT 149-12
Contextual Info: PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package Rev. 01 — 11 May 2005 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge ESD protection diode in a SOT23 (TO-236AB) small SMD plastic package designed to protect one high-speed data line

smd code marking sot23

Abstract: MARKING SOT23 .215 .235 data sheet for all smd components MV SOT23 sot23 marking code SOT23 marking codes SOT23 DIODE marking CODE AV marking code 10 sot23 SMD Packages transistor smd code marking 420
Contextual Info: PMEGxx05ET series 0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package Rev. 01 — 15 July 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an

HE 13003

Abstract: 13003 HE X 13003 smd transistor 13003 F 13003 13003 application notes transistor 13003 K1 E 13003 cd 13003 bp 13003
Contextual Info: BB207 FM variable capacitance double diode Rev. 02 — 27 April 2004 Product data sheet 1. Product profile 1.1 General description The BB207 is a variable capacitance double diode with a common cathode, fabricated in silicon planar technology, and encapsulated in the SOT23 small plastic SMD package.

PMBFJ111

Abstract: PMBFJ112 philips PMBFJ113 PMBFJ113 pmbfj111_112_113_
Contextual Info: PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features • High-speed switching ■ Interchangeability of drain and source connections

BF747

Abstract: MBB400 sot23-4 marking a1
Contextual Info: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.

bf547 philips

Abstract: BF547 B12 IC marking code marking code 604 SOT23
Contextual Info: BF547 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ Feedback capacitance typically 1 pF Stable oscillator operation