PH2731 Search Results

Contextual Info: PH2731-5M Radar Pulsed Power Transistor 5W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: PH2731-75L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)65â V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)190# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)7.5mx @V(CBO) (V) (Test Condition)36

Contextual Info: A t f .MOM m an A M P com pany Radar Pulsed Power Transistor, 20W, lOO^is Pulse, 10% Duty 2.7-3.1 GHz PH2731-20M V2.00 900 £2 bb Features • • • • • • • • 650 C lb 51) NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C on fig u ratio n

Contextual Info: PH2731-5M Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)63â V(BR)CBO (V) I(C) Max. (A)700m Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition)40

PH2731

Contextual Info: PH2731-20M Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: PH2731-20M Radar Pulsed Power Transistor 20W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

ph2731-5m

Abstract: RF NPN POWER TRANSISTOR 3 GHZ RF NPN POWER TRANSISTOR 3 GHZ 5w 3 w RF POWER TRANSISTOR 2.7 ghz
Contextual Info: PH2731-5M Radar Pulsed Power Transistor 5W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

PH2731-20M

Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz
Contextual Info: an AMP company Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz v2.00 9co Features ,-^ :22.85> NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry

Contextual Info: jq & c m W an A M P com pany Radar Pulsed Power Transistor, 5W, 100p.s Pulse, 10% Duty 2.7 - 3.1 GHz PH2731-5M V2.00 Features • • • • • • • • 900 _ CP? 8 5 NPN Silicon M icrowave Pow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro ad b an d Class C O p e ra tio n

TRANSISTOR D 1765

Abstract: PH2731-80M 1J41
Contextual Info: H/ A- COM HÖE D P H 0 m SbMSSOS 0 0 0 0 7 7 1 SS3 • J1AP PH2731-80M Microwave Pulsed Power Transistor Design Characteristics A — B • • • • • 100 |xS Pulse Operation Broadband 2.7 - 3.1 GHz Operation Common Base Configuration Hermetic Metal / Ceramic Package

PH2731-20M

Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz
Contextual Info: PH2731-20M Radar Pulsed Power Transistor 20W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

TRANSISTOR ZFW

Abstract: zfw 03 capacitor mallory ZFW TRANSISTOR transistor 5w transistor j18 PH2731-5M TT50M50A transistor power 5w transistor 335
Contextual Info: an AMP company Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10% Duty PH2731-5M 2.7 - 3.1 GHz v2.00 Features ,930 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

Contextual Info: Radar Pulsed Power Transistor, 75W, 300ns Pulse, 10% Duty 2.7 - 3.1 GHz PH2731-75L V 2 .0 0 Features COÜ N I’ N Silicon Microwave Power Transistor C om m on Hase Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

J122 transistor

Abstract: RF NPN POWER TRANSISTOR 3 GHZ PH2731-75L transistor j122
Contextual Info: PH2731-75L Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM

PH1819-60

Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Contextual Info: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies

MAAM-008863

Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Contextual Info: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

PH0912-35

Abstract: PH3135-5M PH0810-4 ST replacement reference SD4590 CROSS MACOM sd4701 PH1214-6M SD2903 DU2805S
Contextual Info: June 1999 ST CROSS REFERENCE WITH MACOM INDUSTRY PART NUMBER DU2805S DU2810S DU2820S DU2840S DU28200M FH2164 PH0810-4 PH0810-15 PH0810-35 PH0810-60A PH0810-60B PH0810-75 PH0810-150 PH0912-35 PH0912-120 PH0912-150 PH1090-350L PH1090-400S PH1090-550S PH1214-55EL

transistor j6

Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015
Contextual Info: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

2SC635

Abstract: MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051
Contextual Info: POWER RF CROSS REFERENCE INDUSTRY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642