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PG1070 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PG1070		Pirgo Electronics	Silicon Planar Power Transistors		Scan	PDF
PG1070		Pirgo Electronics	2 Amp NPN Silicon Planar Power Transistors		Scan	PDF

PG1070 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NE3515S02 Abstract: transistor "micro-x" "marking" 3 NE3515S02-T1C-A ne3515 NE3515S02-T1D-A duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260 Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA	Original	PDF	NE3515S02 NE3515S02-T1C NE3515S02-T1D NE3515S02-T1C-A NE3515S02-T1D-A PG10708EJ01V0DS NE3515S02 transistor "micro-x" "marking" 3 ne3515 duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260
NE3515S02 Abstract: NE3515S02-T1C-A NE3515S02-T1C ROHS GA-08 HS350 NE3515S02-T1D-A RT DUROID 5880 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	NE3515S02 NE3515S02-T1C NE3515S02-T1C-A NE35om PG10708JJ01V0DS IR260 HS350 NE3515S02 NE3515S02-T1C-A NE3515S02-T1C ROHS GA-08 HS350 NE3515S02-T1D-A RT DUROID 5880
NE3515S02 Abstract: NEC Ga FET marking L NE3515S02-T1C-A maximum gain s2p gaas fet micro-X NEC L lnb ku-band NE3515S02-T1C gaas fet micro-X Package marking GaAs S2p NE3515S02 NE3515S02-T1D-A Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA	Original	PDF	NE3515S02 NE3515S02-T1C NE3515S02-T1C-A NE3515S02-T1D NE3515S02-T1D-A NE3515S02 NEC Ga FET marking L NE3515S02-T1C-A maximum gain s2p gaas fet micro-X NEC L lnb ku-band NE3515S02-T1C gaas fet micro-X Package marking GaAs S2p NE3515S02 NE3515S02-T1D-A
NE3515S02 Abstract: NE3515S02-T1C-A NE3515S02-T1D-A HS350 NE3515S02-T1C lnb ku-band GaAs S2p NE3515S02 Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA	Original	PDF	NE3515S02 NE3515S02-T1C NE3515S02-T1C-A NE3515S02-T1D NE3515S02-T1D-A NE3515S02 NE3515S02-T1C-A NE3515S02-T1D-A HS350 NE3515S02-T1C lnb ku-band GaAs S2p NE3515S02
NE3515S02 Abstract: gaas fet micro-X NEC L NE3515S02-T1C-A GaAs S2p NE3515S02 NE3515S02-T1D-A gaas fet micro-X Package NEC Ga FET marking L rogers 5880 HS350 NE3515S02-T1C Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
PG2020 Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053 Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6	OCR Scan	PDF	2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 PG2020 PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
PG1083 Abstract: PG1070 PG1067 PG1068 PG1069 PG1071 PG1072 PG1073 PG1074 PG1075 Text: 0043 59 2 A P I ELECTRONICS INC . — - Ampower Semiconductor Corp. 375 Kings Highway 11787 : Hauppauge, N. Y. 20 A ‘-e 14 A- loo^s^s oooomt t I-' INTERIM BULLETIN s 3 de Su b je ct to Revision Without Notice -APRIL 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN	OCR Scan	PDF	PG1067 PG1084, PG1068 PG1069 PG1070 PG1071 PG1072 PG1073 PG1074 PG1083 PG1072 PG1075
pg2004 Abstract: PG2011 pg2001 PG2006 Text: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE	OCR Scan	PDF	2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 pg2004 PG2011 pg2001 PG2006
50 watts 10mhz 4a Abstract: API Electronics PG1083 PG1067 PG1068 PG1069 PG1070 PG1071 PG1072 PG1073 Text: 00 43592 A P I ELECTRONICS INC.- 2 0 A -Q1 4 é - I Ampower~Semiconductor Corp.’ '""ici i>F\|□□43sc]e oooomh i I 375 Kings Highway IN T E R IM B U L L E T IN Subject to Revision W ithout Notice Hauppauge, N. Y. 11787 ¡PIRGO -A PR IL 15, 1971 POWER TRANSISTOR	OCR Scan	PDF	dd43sc PG1067 PG1084, PG1068 PG1069 PG1070 PG1071 PG1072 PG1073 50 watts 10mhz 4a API Electronics PG1083