MWA5121
Abstract: No abstract text available
Text: WIDEBAND . . . Three stage amplifier cations up to 900 MHz. HYBRID AMPLIFIER designed for broadband linear appli- e Gain 27 dB Typ e Complete o Thin Gain e Low Noise e LOW Block; Requires No External Components Film Construction Figure 4.0 dB Typ Intermodulation
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Untitled
Abstract: No abstract text available
Text: International IG R Rectifier PD - 9.1343A IRFP140N PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = "100 V RüS on = 0.052Î2 lD = 33A
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IRFP140N
O-247
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Untitled
Abstract: No abstract text available
Text: PD-2.359A International n Rectifier 12CGQ150 SCHOTTKY RECTIFIER 35 Amp Major Ratings and Characteristics Characteristics Description/Features 12CGQ150 Units •F AV Rectangular waveform 35 A VRRM 150 V 300 A •FSM *P = 83ms sine Vp @ 15 Apk, T j = 125°C
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12CGQ150
12CGQ150
O-254AA
MIL-S-19500
MIL-S-19500
PERANSIY14
12CGQ150D
12CGQ150U
O-254
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design a sequential timer to switch on and off at least 3 relays in a particular sequence using tim
Abstract: IS09141 Nippon capacitors
Text: Order this document by MC68HC05PV8/D MC68HC05PV8 MC68HC805PV8 HCMOS Microcontroller Unit TECHNICAL DATA M MOTOROLA I IH tfU IU U (M l M U IB H M |i* |a a U | | u u *mot<BISSR T e c h n ic a l Data Motorola reserves the right to make changes without further notice to
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MC68HC05PV8/D
MC68HC05PV8
MC68HC805PV8
1ATX45608-0
design a sequential timer to switch on and off at least 3 relays in a particular sequence using tim
IS09141
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: P D - 9 .1 4 9 0 B International IQ R Rectifier IRFP3710 PRELIMINARY HEXFET Power MOSFET • • • • • A dvanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully Avalanche Rated V d s s = "10 0 V RüS on = 0.025Î2
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IRFP3710
O-247
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