PEP CXM Search Results

PEP Modular Computers GmbH

Abstract: VME ACFAIL PEP Modular Computers tundra universe ii PEP Modular Computers compactPCI PEP VME tundra universe socket am3 pinout PEP Modular Computers GmbH price list PEP Modular Computers software
Contextual Info: VMP2 Power PC-based CPU Board for VME Applications Manual ID: 24855, Rev. Index 02 November 2002 The product described in this manual is in compliance with all applied CE standards. Preface VMP2 Revision History Manual/Product Title: VMP2 Manual ID Number:

CXM-PFB12

Abstract: dm601 PEP Modular Computers dm600 11853 SI6-10BT-IP dm600 SC-485I pep modular cxm PEP Modular Computers software pep piggyback
Contextual Info: HIGHPERFORMANCE CPUs SINGLE-BOARD COMPUTERS VM162/172 VMEbus Single-Board Computer with IndustryPack Support Computation and Communications Performance ̈ High-performance Motorola MC68040/MC68060 CPU ̈ QUad-channel Integrated Communications Controller

PEP Modular Computers

Abstract: PEP Modular Computers vsbc RJ12 to RS232 VSBC-32 PEP Modular Computers software PEP vsbc 32 configuration RS232 Serial Interface cable with RJ12 to 9-Pin D PEP Modular Computers GmbH PEP modular RJ12 to RS485
Contextual Info: HIGHPERFORMANCE CPUs SINGLE-BOARD COMPUTERS VSBC-32 32-Bit Single-Board Computer 32-Bit Computation Performance ̈ QUad-channel Integrated Communications Controller ̈ Up to six serial interfaces ̈ Serial interfaces accessible by front-panel and CXC ̈ Flexible front-panel options for

RJ58

Abstract: PEP VME VM662 VME 6U 233mm DIMENSIONS dm601 VM662-BASE pep piggyback SI6-10BT dm600 MC68040V
Contextual Info: HIGHPERFORMANCE CPUs SINGLE-BOARD COMPUTERS VM642/662 VMEbus Single-Board Computer with ModPack Support Computation and Communications Performance ̈ High-performance Motorola MC68040/MC68060 CPU ̈ Up to 64 Mbyte DRAM & 4 MByte FLASH ̈ QUad-channel Integrated

Transistor J438

Abstract: MRF21010 100B102JW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

RS232 Serial Interface cable with RJ12 to 9-Pin D

Abstract: RS232 Serial Interface cable with RJ12 to 9-Pin vm42 PEP Modular Computers RJ12 to RS232 PEP VME RS232 Cable RJ12 to 9-pin connector PEP Modular Computers software SI-10BT synchronisa
Contextual Info: HIGHPERFORMANCE CPUs SINGLE-BOARD COMPUTERS VM42/62 Scalable VMEbus Single-Board Computer Extraordinary Computation & Communications Performance ̈ High-performance Motorola MC68040/MC68060 CPU ̈ QUad-channel Integrated Communications Controller ̈ Up to six serial interfaces

100B0R5BW

Abstract: 100B102JW Transistor J438 100B5R6BW MRF21010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

NIPPON CAPACITORS

Abstract: Transistor J438 CRCW08051001FKEA MRF21010
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

CRCW08051001FKEA

Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010
Contextual Info: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

CRCW08052201FKEA

Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,

capacitor 2200 micro M

Abstract: chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LR1 MRF21010LSR1 macom marking
Contextual Info: Document Number: MRF21010 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFETs 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

CRCW08051001FKEA

Abstract: MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010
Contextual Info: Document Number: MRF21010-1 Rev. 10, 10/2008 Freescale Semiconductor Technical Data MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

MRF21010

Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.

MRF21010R1

Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

MRF21010

Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF21010

Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

MRF21010

Abstract: 100B102JW 293D106X9035D2T MRF21010S NI-360
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

smd diode J476

Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
Contextual Info: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

Contextual Info: <£e.mi-Conclu<2koi ^Product*, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 378-8960 The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N- Channel Enhancement-Mode Lateral MOSFETs

DIL600

Abstract: CP-RIO3-01 PEP Modular Computers GmbH CP600 pep modular cxm km684000blp sec KM684000BLP-7 vme 3U PEP Modular Computers GmbH price list PEP VME
Contextual Info: CP321 Power PC-based CPU Board for CompactPCI Applications Manual ID: 24977, Rev. Index 02 July 2003 The product described in this manual is in compliance with all applied CE standards. Preface CP321 Revision History Manual/Product Title: CP321 Manual ID Number:

HT 1000-4 power amplifier

Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
Contextual Info: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION