PD4M441L Search Results

21C25

Abstract: Mosfet 30A 250V
Contextual Info: MOSFET 30A 450～ 450～500V PD4M441L/440L PD4M441L P2H4M441L PD4M440L P2H4M440L P2H4M441L/440L 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage

Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

nf-810

Contextual Info: MOSFET 30A 450～ 450～500V PD4M441L/440L PD4M441L P2H4M441L PD4M440L P2H4M440L P2H4M441L/440L 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage

450v 15a mosfet

Abstract: 440L PD4M440L PD4M441L Mosfet 30A 250V
Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

nf-810

Contextual Info: MOSFET 30A 450～ 450～500V PD4M441L/440L PD4M441L P2H4M441L PD4M440L P2H4M440L P2H4M441L/440L 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS

induction heating Circuit

Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Contextual Info: MOSFET 30A 450 500V 1 PD4M441L P2H4M441L PD4M440L

induction heating Circuit

Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Contextual Info: MOSFET 30A 450~500 V PD4M441L PD4M440L P2H4M441L P2H4M440L •回路図 CIRCUIT PD P2H Rg Rg G2 S2 MOS 1 D2S1 2 3 D1 S2 G2 S2 MOS S2 D1 D2 S1 MOS MOS S1 G1 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PD4M441L440L P2H4M441L、440L

Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

P2H4M440L

Abstract: P2H4M441L PD4M440L PD4M441L
Contextual Info: MOSFET 30A 450～ 450～500V PD4M441L/440L PD4M441L P2H4M441L PD4M440L P2H4M440L P2H4M441L/440L 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS

Contextual Info: MOSFET 30A 450～ 450～500V PD4M441L/440L PD4M441L P2H4M441L PD4M440L P2H4M440L P2H4M441L/440L 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage

d2s1

Abstract: Diode s2 01
Contextual Info: MOSFET 30A 450~500 V PD4M441L PD4M440L P2H4M441L P2H4M440L •回路図 CIRCUIT PD P2H Rg Rg G2 S2 MOS 1 D2S1 2 3 D1 S2 G2 S2 MOS S2 D1 D2 S1 MOS MOS S1 G1 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PD4M441L440L P2H4M441L、440L

PF0012

Abstract: Pch MOS FET
Contextual Info: - 160 - S £ P2H10M441H P2H10M441L P2H4M440H P2H4M440L tt € m & B*W B*W B b* w - « â f t ? 1 » H V JR X [m * vos* l » * (V) fë £ 3 P d /P c h (A) * * m MOS N 450 DSS 85 D 230 MOS N 450 DSS 70 D 230 MOS N 500 DSS 30 D 230 MOS N 500 DSS 30 D 230

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ