PD431009 Search Results

IC-8817

Abstract: IC-3237
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The µPD431009 is a high speed, low power, 1 179 072 bits 131 072 words by 9 bits CMOS static RAM. The µPD431009 is packed in 36-pin plastic SOJ. Feature

Contextual Info: SEC ¡j PD431009 131,072 x 9-Bit Static CMOS RAM NEC Electronics Inc. October 1992 Description Pin Configuration The /PD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­

Contextual Info: SEC PD431009 131,072 X 9-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The ¿/PD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­

IC-3237

Abstract: 431009le
Contextual Info: MOS INTEGRATED CIRCUIT PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT D e s c rip tio n The ^PD431009 is a high speed, lo w pow er, 1 179 072 bits 131 072 w o rds by 9 bits CMOS static RAM. The /¿PD431009 is packed in 36-pin plastic SOJ. F e a tu re

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The ^PD 431009 is a high speed, low pow er, 1 179 072 bits 131 072 w o rd s by 9 bits C M O S static RAM. The ¿PD431009 is packed in 36-pin plastic SOJ.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431009L 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description T h e /iP D 4 3 1 0 0 9 L is a h ig h s p e e d , lo w p o w e r, 1, 179, 64 8 b its 131, 072 w o r d s b y 9 b its C M O S s ta tic R A M .

IC-3237

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The /¿PD431009 is a high speed, lo w p o w e r, 1 179 072 b its 131 072 w o rd s by 9 b its CMOS sta tic RAM. The ¿PD431009 is packed in 36-pin p la stic SOJ.

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

Contextual Info: DATA SHEET Æ MOS INTEGRATED CIRCUIT C ¿¿P D 4 3 1 0 0 9 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The ¿¿PD431009 is a high speed, low power, 1 179 072 bits 131 072 words by 9 bits CMOS static RAM. The /¿PD431009 is packed in 36-pin plastic SOJ.

D431000AGZ

Abstract: d431000a UPD431OOOAGZ-7OLL-KKH d431232 d431000ag D431000 ypd431000a D4310 d431000all 031T
Contextual Info: Low Power SRAM 7 DATA SHEET NEC MOS INTEGRATED CIRCUIT ~PD431000A 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT Description ThepPD431000A isa high speed,lowpower, and l,048,576bits 131,072 words x8 bits CMOS static RAM. The vPD431OOOA has two chip enable pins (CEI, CE2) to extend the capacity. And battery backup is

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431009L 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The /PD431009L is a high speed, low power, 1, 179, 648 bits 131,072 words by 9 bits CMOS static RAM. O perating supply voltage is 3.3 V ± 0.3 V.