PD CMS Search Results

schematic diagram of ip camera

Abstract: schematic diagram 48V power supply Poe schematic diagram ip camera circuit diagram 48V ,Poe diagram Converter 24v to 12v pcb layout 12V DC to 24V dC converter schematic diagram circuit diagram 48V power supply Poe DO1813-181ML schematic diagram 48v dc motor driver circuit EEEFK1V331P
Contextual Info: National Semiconductor LM5072 Honsun Tan February 2008 1.0 Design Specifications Inputs Output #1 VinMin=38V Vout1=12V VinMax=60V Iout1=2.1A 2.0 Design Description This LM5072 25W PoE PD Power Eval-board is specially designed for IP Net Cameras powered by PoE. As the PD side's

CMSD2004S

Abstract: BAV99W
Contextual Info: CMSD2004S CMSD2004S ＳＯＴ－２３－３Ｌ SWITCHING DIODE FEATURES １．０２ Power dissipation PD ：250 mW（Tamb=25℃） Collector current IF ：225 mA Collector-base voltage VR ：240 V Operating and storage junction temperature range

CMSD2004S

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Diode CMSD2004S ＳＯＴ－２３－３Ｌ SWITCHING DIODE FEATURES １．０２ Power dissipation PD ：250 mW（Tamb=25℃） Collector current IF ：225 mA Collector-base voltage

Ir 233L

Abstract: CMSD2004S
Contextual Info: SOT-23-3L Plastic-Encapsulate Diodes CMSD2004S ＳＯＴ－２３－３Ｌ SWITCHING DIODE FEATURES １．０２ Power dissipation PD ：250 mW（Tamb=25℃） Collector current IF ：225 mA Collector-base voltage VR ：240 V Operating and storage junction temperature range

Contextual Info: PD - 9.1448B International I R Rectifier IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

HFA06TB60

Abstract: HFA08TB60 diode hfa08tb60 revers characteristic transistor revers characteristic ir 908c SL-2341 32
Contextual Info: PD-2.341 International \1QRIRectifier HEXFRED Provisional Data Sheet HFA08TB60 ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics Features; Units Vr V r rm 600 V If a v 6 A trr (typ) 18 ns On- (typ) 65 Jrrm difrec)M/dt (tvoi

irf121

Abstract: IRF123 367AL irf120 312H IRF122 IW120
Contextual Info: Data Sheet No. PD-9.312H I«R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IR F I 2 IRF121 IRF122 NCHANNEL IRF123 100 Volt, 0.27 Ohm HEXFET T0-204AA TO-3 Hermetic Package

IRFR9010

Abstract: irfu9010 IRFR9012 IRFU9012 IRFR9010TR HMSC
Contextual Info: he d | Nass4sa ooaaBoa i | Data Sheet No. PD-9.516A I N T ERNATIONAL R E C T IFIER INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRSOIO IRFRS01S IRFU9010 IRFU9Q1S P -C H A N N E L Product Summary - 5 0 Volt, 0.50 Ohm HEXFET

C504

Abstract: C504-2R C504-L
Contextual Info: Microcomputer Components Technical Support Group Munich HL DC PD MC Errata Sheet December 16, 1997 / Release 1.3 Device : Marking : C504-L C504-2R AC These parts of the C504 can be identified by the letters “AC“ below the part number. The parts are mounted Plastic Metric Quad Flat Package P-MQFP-44 .

C504

Contextual Info: Microcomputer Components Technical Support Group Munich HL DC PD MC Errata Sheet December 9, 1997 / Release 1.0 Device : Marking : C504-2E ES-BB / BB These parts of the C504 can be identified by the letters BB below the part number. The parts are mounted Plastic Metric Quad Flat Package P-MQFP-44 .

SAB-C509

Abstract: SAB-C509-L marking code 82H CT1R 800H
Contextual Info: Microcomputer Components Technical Support Group Munich HL MCB PD 8 Errata Sheet May 6, 1996 / Release 1.1 Device : Marking : SAB-C509-L ES-CA These parts of the SAB-C509-L are engineering samples and can be identified by the letters "ES-CA" below the part number. The SAB-C509-L, ES-CA is mounted

C G 774 6-1

Abstract: IC 744 744 771 20 744 770 127 wurth 744 744 771 30 regulateur de tension CONVERTISSEUR ELEVATEUR 744 770 wurth 744 032 100
Contextual Info: Würth Elektronik GmbH & Co. KG Verbindungstechnik ^ M ^ O R ie d e n s tra ß e 1 6 D -7 4 6 3 5 K u p ferzell CMS - Inductances de puissance WE-PD A Type L XL B C A B C D E 12,0 12,0 6,0 8,0 5,0 5,0 7,6 7,6 12,0 12,0 jg L ^ S lCATIONS • m axim um adm issible current for S M D -c h o k e s

chips 65554

Abstract: TSC-5 640x480x8bpp 05TM
Contextual Info: 17-1 •L nirb E l e c t r ic a l S p e c if ic a t io n s 1 7 E l e c t r ic a l S p e c if ic a t io n s Table 17-1: 65554 Absolute M aximum Conditions Symbol Pd Vcc V, Vo Parameter Power Dissipation package reliability limit Supply Voltage!" Input Voltage

PKC 2111 PI

Abstract: PKC2126PI PKC 2135
Contextual Info: DC/DC Power Modules 15-18W PKC 2000 I * RajJated ëncjç dual and tripie outputs * Lcwprdile 10.7 rrm 0.42 in , allews 0.8" boardpitch - 0 . 6 in if reosBsj in thepriris i beard * Prom MTBF >2,000,000 hours a t+75 Gaæt&rp&aîureand a ruggaJ mshahcal cmstrudicn

marking CODE Z2Z

Abstract: Zener Diode 1b8 8bc regulator 12w marking code SOT-323 Y2Y marking code 1H8 DIODE
Contextual Info: Central TM CMSZ5221B THRU CMSZ5261B W NE Semiconductor Corp. 250 mW ZENER DIODE 5% TOLERANCE DESCRIPTION: SUPER mini The CENTRAL SEMICONDUCTOR CMSZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial, entertainment and

CMSD2004S

Abstract: A0 DIODE
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode CMSD2004S SOT-323 SWITCHING DIODE FEATURES 1. 25¡ À0. 05 mW Tamb=25℃ 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current 225 mA IF: Collector-base voltage 240 V VR: Operating and storage junction temperature range

CMSD2004S

Contextual Info: Product specification KMSD2004S CMSD2004S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VR 240 V Peak repetitive reverse voltage VRRM 300 V Peak repetitive reverse current IO 200 mA Continuous forward current IF 225 mA Continuous reverse voltage

CMSD2004S

Contextual Info: Diodes SMD Type High Voltage Switching Diode KMSD2004S CMSD2004S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VR 240 V Peak repetitive reverse voltage VRRM 300 V Peak repetitive reverse current IO 200 mA Continuous forward current IF 225

CMSD2004S

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 CMSD2004S Plastic-Encapsulate Diodes SOT-23 SWITCHING DIODE FEATURES CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. Power dissipation

CMSD4448

Contextual Info: Central CMSD4448 TM Semiconductor Corp. SUPER-MINI HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded supermini surface mount package, designed for

Contextual Info: CMSD2004 Surface Mount Switching Diode SOT-23 Features — The central semiconductor cmsd2004 stype is a silicon switching dual in series diode manufactured by the epitaxial planar, designed for applications requiring high voltage capability. power dissipation.

Contextual Info: Central" CMSD2836 CMSD2838 Semiconductor Corp. SUPER-MINI DUAL SILICON SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMSD2836, CMSD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded super-mini surface mount package,

CMSD4448

Contextual Info: Central" CMSD4448 Semiconductor Corp. SUPER-MINI HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMSD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded super-mini surface mount package, designed for high