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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input


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    MMG3014NT1 MMG3014NT1 PDF

    m3002n

    Abstract: RF transistor marking IN SOT-89 M3002
    Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier The MMG3002NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A,


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    MMG3002NT1 OT--89 MMG3002NT1 m3002n RF transistor marking IN SOT-89 M3002 PDF

    M3H21N

    Abstract: MMG3H21NT1 transistor c 5299 DATA
    Text: Freescale Semiconductor Technical Data Document Number: MMG3H21NT1 Rev. 2, 9/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3H21NT1 Broadband High Linearity Amplifier The MMG3H21NT1 is a General Purpose Amplifier that is internally input


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    MMG3H21NT1 MMG3H21NT1 DataMMG3H21NT1 9/2012Semiconductor, M3H21N transistor c 5299 DATA PDF

    Z5 1512

    Abstract: No abstract text available
    Text: Document Number: MMG3014NT1 Rev. 4, 8/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a general purpose amplifier that is internally input


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    MMG3014NT1 MMG3014NT1 Z5 1512 PDF

    Z5 1512

    Abstract: M3014N 12065J0R2BS C0805C225J4RAC SOT89A C0603C119J5GAC ERJ-3GEY0R00V C0603C189J5GAC C0805C209J5GAC PCN13337
    Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input


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    MMG3014NT1 MMG3014NT1 Z5 1512 M3014N 12065J0R2BS C0805C225J4RAC SOT89A C0603C119J5GAC ERJ-3GEY0R00V C0603C189J5GAC C0805C209J5GAC PCN13337 PDF

    M3111N

    Abstract: 22A114 irl 3710 m3111
    Text: Freescale Semiconductor Technical Data Document Number: MMH3111NT1 Rev. 4, 9/2012 Heterostructure Field Effect Transistor GaAs HFET MMH3111NT1 Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A,


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    MMH3111NT1 M3111N 22A114 irl 3710 m3111 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3015NT1 Rev. 3, 9/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3015NT1 Broadband High Linearity Amplifier The MMG3015NT1 is a general purpose amplifier that is internally input


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    MMG3015NT1 MMG3015NT1 DataMMG3015NT1 9/2012Semiconductor, PDF