Untitled
Abstract: No abstract text available
Text: HYM71V16655BT6 Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Nov. 2001 Preliminary 0.2 Changed Block Diagram Mar. 2003 0.3 Changed Block Diagram Aug. 2003 16Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh
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HYM71V16655BT6
16Mx64
PC100
8Mx16
HYM71V16655BT6
16Mx64bits
8Mx16bits
400mil
54pin
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Untitled
Abstract: No abstract text available
Text: KMM374S3323T PC100 Unbuffered DIMM Revision 0.1 Mar. 23, 1999 - Changed "Detail C" in PCB Dimension & Block Diagram. Rev. 0.1 Mar. 1999 PC100 Unbuffered DIMM KMM374S3323T KMM374S3323T SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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KMM374S3323T
PC100
KMM374S3323T
32Mx72
16Mx8,
400mil
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KMM374S3323T-G8
Abstract: KMM374S3323T-GH KMM374S3323T-GL
Text: PC100 SDRAM MODULE KMM374S3323T Revision History [ Rev. 1 ] March 23. 1999 Package dimension and Block Diagram changed. Rev.1 Mar. 1999 PC100 SDRAM MODULE KMM374S3323T KMM374S3323T SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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PC100
KMM374S3323T
KMM374S3323T
32Mx72
16Mx8,
400mil
KMM374S3323T-G8
KMM374S3323T-GH
KMM374S3323T-GL
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KMM374S1623CT-GH
Abstract: No abstract text available
Text: KMM374S1623CT PC100 Unbuffered DIMM Revision History [ Rev. 1 ] March 23. 1999 Functional Block Diagram and Package dimension changed. Rev.1 Mar. 1999 KMM374S1623CT PC100 Unbuffered DIMM KMM374S1623CT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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KMM374S1623CT
PC100
KMM374S1623CT
16Mx72
400mil
168-pin
KMM374S1623CT-GH
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Untitled
Abstract: No abstract text available
Text: M390S6450BTU PC133/PC100 Registered DIMM Revision History Revision 0.0 Sep. 26, 2000 - PC133 first published Revision 0.1 (Sep. 26, 2000) - Add PC100 specification. Revision 0.2 (Feb. 14, 2001) - Change Functional Block Diagram - Eliminate "Preliminary"
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M390S6450BTU
PC133/PC100
PC133
PC100
M390S6450BTU
64Mx72
64Mx4,
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M390S2858BTU-C1H
Abstract: M390S2858BTU-C1L M390S2858BTU-C75 PC133 registered reference design
Text: M390S2858BTU PC133/PC100 Registered DIMM Revision History Revision 0.0 Sep. 26, 2000 - PC133 first published Revision 0.1 (Sep. 26, 2000) - Add PC100 specification. Revision 0.2 (Feb. 14, 2001) - Change Functional Block Diagram - Eliminate "Preliminary"
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M390S2858BTU
PC133/PC100
PC133
PC100
M390S2858BTU
128Mx72
128Mx4,
M390S2858BTU-C1H
M390S2858BTU-C1L
M390S2858BTU-C75
PC133 registered reference design
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Untitled
Abstract: No abstract text available
Text: M390S3320CTU PC133/PC100 Registered DIMM Revision History Revision 0.0 Sep. 26, 2000 - PC133 first published Revision 0.1 (Sep. 26, 2000) - Add PC100 specification. Revision 0.2 (Feb. 14, 2001) - Change Functional Block Diagram - Eliminate "Preliminary"
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M390S3320CTU
PC133/PC100
PC133
PC100
M390S3320CTU
32Mx72
32Mx4,
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samsung date code
Abstract: M390S2858BTU-C1H M390S2858BTU-C1L M390S2858BTU-C75 PC133 registered reference design
Text: M390S2858BTU PC133/PC100 Registered DIMM Revision History Revision 0.0 Sep. 26, 2000 - PC133 first published Revision 0.1 (Sep. 26, 2000) - Add PC100 specification. Revision 0.2 (Feb. 14, 2001) - Change Functional Block Diagram - Eliminate "Preliminary"
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M390S2858BTU
PC133/PC100
PC133
PC100
M390S2858BTU
128Mx72
128Mx4,
samsung date code
M390S2858BTU-C1H
M390S2858BTU-C1L
M390S2858BTU-C75
PC133 registered reference design
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K4S280432C-TC75
Abstract: M390S3320CTU-C1H PC133 registered reference design
Text: M390S3320CTU PC133/PC100 Registered DIMM Revision History Revision 0.0 Sep. 26, 2000 - PC133 first published Revision 0.1 (Sep. 26, 2000) - Add PC100 specification. Revision 0.2 (Feb. 14, 2001) - Change Functional Block Diagram - Eliminate "Preliminary"
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M390S3320CTU
PC133/PC100
PC133
PC100
M390S3320CTU
32Mx72
32Mx4,
K4S280432C-TC75
M390S3320CTU-C1H
PC133 registered reference design
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K4S560432B-TC75
Abstract: M390S6450BTU-C1H M390S6450BTU-C1L M390S6450BTU-C75 PC133 SDRAM registered DIMM 512MB samsung PC133 registered reference design
Text: M390S6450BTU PC133/PC100 Registered DIMM Revision History Revision 0.0 Sep. 26, 2000 - PC133 first published Revision 0.1 (Sep. 26, 2000) - Add PC100 specification. Revision 0.2 (Feb. 14, 2001) - Change Functional Block Diagram - Eliminate "Preliminary"
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M390S6450BTU
PC133/PC100
PC133
PC100
M390S6450BTU
64Mx72
64Mx4,
K4S560432B-TC75
M390S6450BTU-C1H
M390S6450BTU-C1L
M390S6450BTU-C75
PC133 SDRAM registered DIMM 512MB samsung
PC133 registered reference design
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hyundai dimm 128mb pc100 32mx64
Abstract: RA12 FEB01
Text: 32Mx64 bits PC100 SDRAM SODIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656T6 Series DESCRIPTION The HYM72V32M656T6 Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy
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32Mx64
PC100
16Mx16
HYM72V32M656T6
54-pin
144-pin
256Mbytes.
hyundai dimm 128mb pc100 32mx64
RA12
FEB01
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HYM72V64656T8
Abstract: HYM72V64656T8-8 HYM72V64656T8-S RA12
Text: 64Mx64bits PC100 SDRAM Unbuffered DIMM based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V64656T8 Series DESCRIPTION The HYM72V64656T8 H-series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of sixteen 32Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy printed
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64Mx64bits
PC100
32Mx8
HYM72V64656T8
54-pin
168-pin
HYM72V64656T8-8
HYM72V64656T8-S
RA12
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RA12
Abstract: No abstract text available
Text: 32Mx64bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656H L T6 Series DESCRIPTION The HYM72V32M656H(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy
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32Mx64bits
PC100
16Mx16
HYM72V32M656H
32Mx64bits
16Mx16bits
400mil
54pin
144pin
RA12
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Untitled
Abstract: No abstract text available
Text: 64Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V64S756T4 Series Preliminary DESCRIPTION The HYM72V64S756T4 -Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eighteen 64Mx4 bit Synchronous DRAMs in 54-pin TSOPII, two 48-pin SOP Register Buffers, one 24-pin SOP PLL and 8-pin
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64Mx72
PC100
64Mx4
HYM72V64S756T4
54-pin
48-pin
24-pin
168-pin
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Untitled
Abstract: No abstract text available
Text: 32Mx64bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656B L T6 Series DESCRIPTION The HYM72V32M656B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy
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32Mx64bits
PC100
16Mx16
HYM72V32M656B
32Mx64bits
16Mx16bits
400mil
54pin
144pin
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HYM71V32655ALT8M-8
Abstract: HYM71V32655ALT8M-P HYM71V32655ALT8M-S HYM71V32655AT8M HYM71V32655AT8M-8 HYM71V32655AT8M-P HYM71V32655AT8M-S
Text: 32Mx64bits PC100 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V32655AT8M Series DESCRIPTION The Hynix HYM71V32655AT8M Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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32Mx64bits
PC100
16Mx8
HYM71V32655AT8M
32Mx64bits
16Mx8bits
400mil
54pin
168pin
HYM71V32655ALT8M-8
HYM71V32655ALT8M-P
HYM71V32655ALT8M-S
HYM71V32655AT8M-8
HYM71V32655AT8M-P
HYM71V32655AT8M-S
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Untitled
Abstract: No abstract text available
Text: 8Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8655AT6 Series DESCRIPTION The Hyundai HYM71V8655AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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8Mx64
PC100
8Mx16
HYM71V8655AT6
8Mx64bits
8Mx16bits
400mil
54pin
168pin
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p2808
Abstract: No abstract text available
Text: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4655HGT6 Series Preliminary DESCRIPTION The Hyundai HYM76V4655HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4x16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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4Mx64
PC100
4Mx16
HYM76V4655HGT6
4Mx64bits
4x16bits
400mil
54pin
168pin
p2808
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RA12
Abstract: No abstract text available
Text: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656T6 Series DESCRIPTION The HYM72V16M656T6 -Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy
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16Mx64
PC100
16Mx16
HYM72V16M656T6
54-pin
144-pin
RA12
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Untitled
Abstract: No abstract text available
Text: 32Mx64 bits PC100 SDRAM SODIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656T6 Series DESCRIPTION The HYM72V32M656T6 Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy
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32Mx64
PC100
16Mx16
HYM72V32M656T6
54-pin
144-pin
256Mbytes.
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RA12
Abstract: No abstract text available
Text: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656H L T6 Series DESCRIPTION The HYM72V16M656H(L)T6 -Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy
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16Mx64
PC100
16Mx16
HYM72V16M656H
54-pin
144-pin
RA12
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Untitled
Abstract: No abstract text available
Text: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656B L T6 Series DESCRIPTION The HYM72V16M656B(L)T6 -Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy
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16Mx64
PC100
16Mx16
HYM72V16M656B
54-pin
144-pin
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Untitled
Abstract: No abstract text available
Text: 32Mx64 bits PC100 SDRAM SODIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656 L T6 Series DESCRIPTION The HYM72V32M656T6 Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy
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32Mx64
PC100
16Mx16
HYM72V32M656
HYM72V32M656T6
54-pin
144-pin
256Mbytes.
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RA12
Abstract: No abstract text available
Text: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656B L T6 Series DESCRIPTION The HYM72V16M656B(L)T6 -Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy
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16Mx64
PC100
16Mx16
HYM72V16M656B
54-pin
144-pin
RA12
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