FZT796A
Abstract: FZT696B cal 3200 emitter PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT DSA003717
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT796A 1.0 ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VCEO * Gain of 250 at IC=0.3 Amps * Very low saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT696B PARTMARKING DETAIL FZT796A
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OT223
FZT796A
FZT696B
-200mA
-20mA*
-10mA,
-100mA,
FZT796A
FZT696B
cal 3200
emitter
PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT
DSA003717
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T6705
Abstract: NPN/PNP transistor sot223 zdt705 complementary npn-pnp power transistors ZDT605 ZDT6705 DSA0037253 DSA003725 transistor ic1A
Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6705 ISSUE 1 - NOVEMBER 1995 C1 ZDT6705 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T6705 ABSOLUTE MAXIMUM RATINGS.
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ZDT6705
OT223)
T6705
-10mA*
-100mA,
20MHz
-10mA,
ZDT705
T6705
NPN/PNP transistor sot223
complementary npn-pnp power transistors
ZDT605
ZDT6705
DSA0037253
DSA003725
transistor ic1A
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complementary npn-pnp
Abstract: complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725
Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T6757 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZDT6757
-160V,
-200V,
-100mA,
-10mA*
complementary npn-pnp
complementary npn-pnp power transistors
zdt6757
FZT657
T6757
NPN/PNP transistor sot223
FZT757
200V 100MA NPN
DSA003725
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t1053
Abstract: ZDT1053 DSA003723
Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1053 ISSUE 2 - APRIL 2000 ZDT1053 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T1053 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZDT1053
OT223)
T1053
100mA
t1053
ZDT1053
DSA003723
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t605
Abstract: dual npn 500ma ic 324 ZDT605 DSA003724
Text: SM-8 DUAL NPN MEDIUM POWER DARLINGTON TRANSISTORS ZDT605 ISSUE 1 - NOVEMBER 1995 ZDT605 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T605 PARAMETER SYMBOL Collector-Base Breakdown
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ZDT605
OT223)
t605
dual npn 500ma
ic 324
ZDT605
DSA003724
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T694
Abstract: PARTMARKING at sot223 ZDT694 DSA003726
Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT694 ZDT694 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T694 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL MIN. TYP.
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ZDT694
OT223)
T694
PARTMARKING at sot223
ZDT694
DSA003726
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ZDT758
Abstract: t758 DSA003727
Text: SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ZDT758 ZDT758 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T758 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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ZDT758
-10mA*
OT223)
ZDT758
t758
DSA003727
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t1053
Abstract: ZDT1053 ic 245
Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1053 ISSUE 1 - NOVEMBER 1995 ZDT1053 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T1053 ABSOLUTE MAXIMUM RATINGS.
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ZDT1053
OT223)
T1053
100mA
t1053
ZDT1053
ic 245
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partmarking 6 C
Abstract: PARTMARKING at sot223 ZDT619
Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT619 ISSUE 1 - NOVEMBER 1995 ZDT619 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T619 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZDT619
OT223)
200mA,
100MHz
partmarking 6 C
PARTMARKING at sot223
ZDT619
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FZT757
Abstract: 200V 100MA NPN t6757 FZT657
Text: Obsolete. Nearest alternative is ZDT6753 SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T6757
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ZDT6753
ZDT6757
T6757
OT223)
-10mA,
-160V,
-200V,
-100mA,
-10mA*
FZT757
200V 100MA NPN
t6757
FZT657
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ZDT717
Abstract: T-717 DSA003727
Text: SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS ZDT717 ZDT717 ISSUE 1 - NOVEMBER 1995 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T717 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZDT717
OT223)
-10mA*
-10mA,
-100mA,
-50mA,
100MHz
ZDT717
T-717
DSA003727
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AAAA SOT23
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE FMMD914 ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION PARTMARKING DETAIL 5D 2 1 3 ! SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Working Peak Reverse Voltage VRWM 75 V Average Rectified Forward Current at
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FMMD914
180mm)
330mm)
FMMT491
AAAA SOT23
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ZVN2120
Abstract: ZVN2120G DSA003736
Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES: * VDS - 200V * RDS ON - 10Ω ZVN2120G ✪ D S PARTMARKING DETAIL - ZVN2120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb=25°C
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OT223
ZVN2120G
ZVN2120
ZVN2120
ZVN2120G
DSA003736
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m4306n
Abstract: ZDM4306N DSA003723 M4306
Text: SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS ZDM4306N ISSUE 1 - NOVEMBER 1995 D1 G1 D1 S1 D2 G2 D2 S2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – M4306N ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25°C
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ZDM4306N
OT223)
M4306N
m4306n
ZDM4306N
DSA003723
M4306
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FZT755
Abstract: fzt655 DSA003712
Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT655 ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS FZT655 ✪ C 0.18 COMPLEMENTARY TYPE FZT755 - Normalised Gain % IC/IB=10 0.10 h V - (Volts) 100 0.01 0.1 1 10
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OT223
FZT655
FZT755
500mA,
20MHz
FZT755
fzt655
DSA003712
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FZTA14
Abstract: FZTA63 FZTA64
Text: SOT223 PNP SILICON PLANAR DARLINGTON TRANSISTORS FZTA63 FZTA64 TYPICAL CHARACTERISTICS 1.5 1.5 +25° C 1.0 1.0 0.5 0.5 I+/I*=1000 10m 100m 1 1m 10m 100m 1 10 IC - Collector Current A VCE(sat) v IC 45k PARTMARKING DETAILS: FULL DEVICE TYPE COMPLIMENTARY TYPES:
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OT223
FZTA63
FZTA64
FZTA13
FZTA14
100ms
FZTA14
FZTA63
FZTA64
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FZT657
Abstract: FZT757 DSA003712
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FZT657 TYPICAL CHARACTERISTICS 1.8 - Normalised Gain % 1.2 IC /IB=10 1.0 0.8 V 0.6 0.4 0.2 0.01 0.1 1 10 h - (Volts) 1.4 E 80 40 ABSOLUTE MAXIMUM RATINGS. 20 0.1 1 I+ - Collector Current (Amps) I+ - Collector Current (Amps)
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OT223
FZT657
FZT757
100mA,
20MHz
FZT657
FZT757
DSA003712
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FZT757
Abstract: FZT657 DSA003716
Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT757 TYPICAL CHARACTERISTICS td tr ts tf µs µs 4 1.6 IC /IB=10 IB1=IB2=IC /10 200 3 V 150 100 1.2 0.01 0.1 0.6 1 ABSOLUTE MAXIMUM RATINGS. tr tf ts td tr 0.01 IC - Collector Current Amps 0.1 1 IC - Collector Current (Amps)
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OT223
FZT757
FZT657
-100mA,
-10mA*
-200V
-10mA,
FZT757
FZT657
DSA003716
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FZT869
Abstract: DSA003718
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT869 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 60 Collector-Emitter Breakdown Voltag V(BR)CER
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OT223
FZT869
100mA,
50MHz
100mA
FZT869
DSA003718
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FZT753
Abstract: FZT653 DSA003715
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT753 TYPICAL CHARACTERISTICS 0.6 td Switching time - Volts 0.4 I+ /I*=10 V 0.3 0.2 tf ts ns ns 140 E COMPLEMENTARY TYPE 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0.0001 0.001 0.01 0.1 1 PARTMARKING DETAIL
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OT223
FZT753
FZT653
FZT753
FZT653
DSA003715
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FZT649
Abstract: FZT749 transistor FZT749
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT749 TYPICAL CHARACTERISTICS td tr 1.8 tf IB1=IB2=IC/10 ns ts 1.2 1.0 0.8 V 0.6 IC/IB=100 140 ns 1200 120 1000 100 COMPLEMENTARY TYPE PARTMARKING DETAIL ts 60 40 0.2 200 tr 0.01 0.1 1 10 E FZT649 FZT749
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OT223
FZT749
IC/10
FZT649
-500mA,
-50mA
-100mA,
100MHz
FZT649
FZT749
transistor FZT749
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * High V CE0 / Very Low Saturation Voltage * Gain of 400 at lc=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B ABSOLUTE MAXIMUM RATINGS.
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OT223
200mA
FZT694B
50MHz
100mA,
7057fl
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT796A ISSUE 3 - OCTOBER 1995 FEATURES * * 200 V olt VCE0 Gain o f 250 at lc=0.3 Am ps * Very lo w saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE - FZT696B PARTMARKING DETAIL-
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OT223
FZT796A
FZT696B
-100mA,
-10mA
-10mA,
-20mA*
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Untitled
Abstract: No abstract text available
Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET o FEATURES: * VDS - 200V * n •. ^DS ON ‘ 10ÎÎ w PARTMARKING DETAIL - ZVN2120 K s s D Q ABSOLUTE MAXIMUM RATINGS. VALUE UNIT PARAMETER SYMBOL Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamtp25°C
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OT223
ZVN2120
Tamtp25Â
ZVN2120G
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