PALC22V10D10J Search Results

22V10D

Abstract: PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D PALC22V10D-10JC
Contextual Info: MbE D CYPRESS SEMICONDUCTOR • aSBTbbE QOGbcieJS 3 E3CYP PRELIMINARY CYPRESS SEMICONDUCTOR PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. standard — 120 mA max. military

Contextual Info: CYPRESS SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device DIP, LCC, and PLCC available — 7.5 ns commercial version 5 ns tco 5 ns t§ 7.5 ns tpo 133-MHz state machine — 10 ns military and industrial ver­ sions 6 ns tco 6 ns tg 10 ns tpo 110-MHz state machine

22V10D-10

Abstract: 22V10D MIL-STD-1835 V10D-9 R1238 ay 9j CERAMIC LEADLESS CHIP CARRIER K73 Package PALC22V10D R2170
Contextual Info: fax id: 6007 For new designs, please refer to the PALCE22V10. PALC22V10D CYPRESS Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)

22V10D

Abstract: 22V10D-10 22V10D-15 PALC22V10D PALC22V10D-7JC PALCE22V10 V10D
Contextual Info: For new designs, please refer to the PALCE22V10. PALC22V10D Flash Erasable, Reprogrammable CMOS PAL D Features D D Advanced secondĆgeneration PAL arĆ D D 5 ns tCO Low power 5 ns tS Ċ 90 mA max. commercial 10 ns 7.5 ns tPD testing Functional Description

palc22v10d programming guide

Contextual Info: Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for electrical erasabllity and reprogrammablllty

Contextual Info: Revision: Tuesday, January 5,1993 C.- PALC22V10D CYPRESS -SEMICONDUCTOR • Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)

22V10D

Abstract: 22V10D-10 22V10D-15 PALC22V10D-15PC PALC22V10D-10PI PALC22V10D PALCE22V10 R2170 V10D PALC22V10D-15DMB
Contextual Info: For new designs, please refer to the PALCE22V10 PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogrammability

Fair-Rite

Abstract: PAL22V10D
Contextual Info: S TANDARD PRO DUCT PM PM C-Sierra, inc. P M 5945 -UTP5 PMC-940202 ISSUE 2. APRIL 7, 1995 APP SAPI UTP5 PM5945-UTP5 S/UNI-155 IT M SONET ATM P H Y S I C A L I N T E R F A C E APPLICATION BOARD FOR CAT - 5 UTP PMC-Sierra, Inc. 8501 Commerce C ourt, Burnaby, BC Canada V5A 4N3 604 668 7300

22V10D-10

Abstract: PALC22V10D-10JC 22V10D 22V10D-15 PALC22V10D PALCE22V10 R2170 V10D PALC22V10D-15PC v10d12
Contextual Info: fax id: 6007 1P AL C2 2V 10D For new designs, please refer to the PALCE22V10. PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)

UTP5

Abstract: PAL22V10D FIFO 32x8 ST6021 tca 780 PAL22V10D-10PC 0x56-0x5F AM27S19 CY7B951 PM5345
Contextual Info: PMC-Sierra, Inc. S TANDARD PRODUCT PM5945 -UTP5 PMC-940202 ISSUE 2. APRIL 7, 1995 APP_SAPI_UTP5 PM5945-UTP5 SONET ATM PHYSICAL INTERFACE APPLICATION BOARD FOR CAT-5 UTP

22V10D-10

Abstract: CERAMIC LEADLESS CHIP CARRIER 22V10D 238Q PALC22V10D PALCE22V10
Contextual Info: For new designs, please refer to the PALCE22V10. m w CYPRESS PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features DIP, L C C , an d PLC C available • A dvanced secon d -gen eration PAL ar­ chitectu re — 7.5 n s com m ercial v ersion 5 n s tCo

Contextual Info: V CYPRESS Features PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device — Proven Flash EPROM technology • DIP, LCC, and PLCC available — 7 J ns commercial version • Advanced second-generation PAL ar­ chitecture • Low power — 90 mA max. commercial 10 ns