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    P8008

    Abstract: VDR 0047 P80081 UT61L12816 128K x 16-bit
    Text:  UTRON Preliminary Rev. 0.1 UT61L12816 128K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY REVISION Preliminary Rev. 0.1 Original. DESCRIPTION UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882


    Original     		PDF UT61L12816 P80081 UT61L12816 152-bit 10/12/15ns current3-5777919 UT61L12816MC-10 P8008 VDR 0047 P80081 128K x 16-bit

    UT61L12816

    Abstract: No abstract text available
    Text:  UTRON Rev. 1.0 UT61L12816 128K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original. Rev. 1.0 1. Revised Standby current : 10/2mA max 0.5mA(typ.) 2. Delete ICC1, ICC2 3. Revised ISB : 30mA 3mA, ISB1:10mA 2mA,


    Original     		PDF UT61L12816 10/2mA P80081 500mV UT61L12816