bulletin 700 type n
Abstract: Allen-Bradley 800T 700DC-NT200 700DC-NT300 700DC-N400 852S-C bulletin 700 type r and rm ALLEN-BRADLEY POTENTIOMETER 700-N600 84AB86
Text: Bulletin 700 Industrial Relays Type N, NM Bulletin 700 Type N Relays and Type NM Latching Relays S Convertible Contact Cartridges S Compact Construction S NEMA A300 AC S NEMA P300 DC S Pneumatic Timing Unit S Solid State Timing Unit S Overlap Contacts S Logic Reed Contacts
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PISA bus
Abstract: No abstract text available
Text: Single Board Computer ATOM ATOM ATOM Supports Intel Pentium processors to 233MHz MMX, AMD K6-2/III 3D Now to 300MHz, Cyrix MII to P300 MX and IDT Winchip to 240MHz. Up to 256MB DRAM 0/256/512KB L2 Cache options 0 to 72MB Flash options (DiskOnChip) Chips & Technologies 69000 PCI SVGA
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233MHz
300MHz,
240MHz.
256MB
0/256/512KB
1280x1024x256,
1024x768x64K,
800x600x16M,
640x480x16M
100/10Base-T
PISA bus
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Untitled
Abstract: No abstract text available
Text: P300A thru P300M Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 200 A IR 5.0 µA VF 1.2 V Tj max. 150 °C DO-201AD Features • Low forward voltage drop • Low leakage current, IR less than 0.1 µA
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P300A
P300M
DO-201AD
DO-201AD,
UL-94V-0
J-STD-002B
MIL-STD-750,
28-Apr-05
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intellon application note
Abstract: intellon diode ssc pl intellon power line network communication SSC-P111 EIA-600 SSC P111 P300 P300 diode power line carrier communication
Text: Technical Data Sheet SSC P111 PL Media Interface IC Features • Integrates Power Amplifier and Tri-state functions for CEBus Powerline PL Physical Interfaces • Replaces approximately 30 discrete components to save board space and increase reliability
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SSC-P111
Abstract: Intellon Intellon p485 SSC-P300 intellon p111 400 watts amplifier circuit diagram with specific SSC P485 PL Transceiver IC SSC P111TR intellon p200 600 watts amplifier circuit diagram with specific
Text: Technical Data Sheet SSC P111 PL Media Interface IC Features • Integrates Power Amplifier and Tri-state functions for CEBus and Intellon SSC Spread Spectrum Carrier Powerline (PL) Physical Interfaces • Replaces approximately 30 discrete components to save board space
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solar cell
Abstract: SB15H45 photovoltaic panels solar panel monocrystalline schottky diode application current bypass diodes "solar CELL" PHOTOVOLTAIC PANEL SOLAR Schottky diode TO220
Text: VISHAY GENERAL SEMICONDUCTOR www.vishay.com Rectifiers Application Note Solar Cell Bypass Diodes in Silicon Crystalline Photovoltaic Panels IMPORTANT CHARACTERISTICS OF BYPASS DIODES FOR PHOTOVOLTAIC SOLAR CELLS 1. Forward Voltage Drop VF at Bypass The basic function of bypass diodes in solar cells is to
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O-263
18-Aug-11
solar cell
SB15H45
photovoltaic panels
solar panel monocrystalline
schottky diode application
current bypass diodes
"solar CELL"
PHOTOVOLTAIC PANEL
SOLAR
Schottky diode TO220
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Untitled
Abstract: No abstract text available
Text: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial/Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE
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P4C1024
32-Pin
P4C1024
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P4C1024
Abstract: No abstract text available
Text: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial/Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE
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P4C1024
--32-Pin
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motorola c520
Abstract: 0189727L01 lm3652 pdf transistor c815 motorola transistor R711 transistor c815 c815 transistor HOSIDEN DC Power Plug motorola G20 motorola s200
Text: Developer's Guide Motorola g20 Developer’s Kit 98-08901C67-E SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE Notice While reasonable efforts have been made to assure the accuracy of this document, Motorola, Inc. assumes no liability resulting from any inaccuracies or omissions in this document, or from use of the information obtained herein. The information in this
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98-08901C67-E
98-08901C67-E*
motorola c520
0189727L01
lm3652
pdf transistor c815
motorola transistor R711
transistor c815
c815 transistor
HOSIDEN DC Power Plug
motorola G20
motorola s200
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Untitled
Abstract: No abstract text available
Text: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply
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P4C1024
--32-Pin
576-bit
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Untitled
Abstract: No abstract text available
Text: FTS88130 128Kx8 High Speed SRAM FEATURES Advanced CMOS Technology Fast tOE Automatic Power Down Packages —32-Pin 300 mil DIP and SOJ —32-Pin 400 mil SOJ —32-Pin 600 mil Ceramic DIP —32-Pin 400 mil Ceramic DIP —32-Pin Solder Seal Flatpack —32-Pin LCC 400 x 820 mil [Two-Sided]
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128Kx8
FTS88130
--32-Pin
FT88130
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J300
Abstract: J400 P300 P4C1024 P4C1024L
Text: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply
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P4C1024
--32-Pin
P4C1024
576-bit
J300
J400
P300
P4C1024L
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J300
Abstract: J400 P300 P4C1024 P4C1024L
Text: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply
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P4C1024
--32-Pin
P4C1024
576-bit
J300
J400
P300
P4C1024L
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Untitled
Abstract: No abstract text available
Text: SUM110N02-03 Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 20 0.0026 @ VGS = 10 V 110a D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage
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SUM110N02-03
O-263
SUM110N02-03--E3
29-Mar-04
S-40571--Rev.
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85C4
Abstract: No abstract text available
Text: FT61024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES Advanced CMOS Technology Fast tOE Automatic Power Down Packages —32-Pin 300 mil DIP and SOJ —32-Pin 400 mil SOJ —32-Pin 600 mil Ceramic DIP —32-Pin 400 mil Ceramic DIP —32-Pin Solder Seal Flatpack
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FT61024
--32-Pin
FT61024
576-bit
85C4
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Memory
Abstract: FT61024
Text: FT61024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES Advanced CMOS Technology Fast tOE Automatic Power Down Packages —32-Pin 300 mil DIP and SOJ —32-Pin 400 mil SOJ —32-Pin 600 mil Ceramic DIP —32-Pin 400 mil Ceramic DIP —32-Pin Solder Seal Flatpack
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FT61024
32-Pin
FT61024
SRAM124
Memory
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Untitled
Abstract: No abstract text available
Text: FT61024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply
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FT61024
--32-Pin
FT61024
576-bit
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SUM110N02-03
Abstract: No abstract text available
Text: SUM110N02-03 Vishay Siliconix N-Channel 20-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 20 0.0026 at VGS = 10 V 110a D D D D TrenchFETr Power MOSFET 175 _C Junction Temperature Low Thermal Resistance Package High Threshold Voltage
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SUM110N02-03
O-263
SUM110N02-03
S-60174--Rev.
13-Feb-06
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BQ727
Abstract: pdf transistor c815 transistor c815 diode m7 MIC MAKE mic diode M7 R747 diode rs232 connector pin out "DC Power Connectors" toshiba lcd power board schematic transistor c107 m
Text: Developer's Guide Motorola g20 Developer’s Kit 98-08901C67-C REVISION HISTORY Revision Date Purpose O 30 June 2003 Initial release A 15 February 2004 Removed 2 g20 models Changes in para. 3.4.2.2 regarding USB driver B 1 March 2004 Updated Table 22 - g20 Connectors Pinout
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98-08901C67-C
DS800
BQ727
pdf transistor c815
transistor c815
diode m7 MIC MAKE
mic diode M7
R747 diode
rs232 connector pin out
"DC Power Connectors"
toshiba lcd power board schematic
transistor c107 m
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P300 diode
Abstract: P300 DIODE P300 D
Text: H TEPRÜ i P-300 ELE C TR O TECHNIK ULTRA-PRECISION METAL FILM POWER RESISTORS P-300 The P-300, sealed power resistor, offers extremely tight tolerance, low temperature coefficient and very high stability. The P-300 combines the high performance electrical characteristics of the TEPRO
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P-300
P-300,
P-300
40KS1
P300 diode
P300
DIODE P300 D
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Untitled
Abstract: No abstract text available
Text: P-3QO ELECTRO TECHIMIK ULTRA PRECISION METAL FILM POWER RESISTORS P-300 The P-300, sealed power resistor, offers extremely tight tolerance, low temperature coefficient and very high stability. The P-300 combines the high performance electrical characteristics of the TEPRO
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P-300
P-300,
P-300
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SW06PHR
Abstract: sw06phr300
Text: TEC H N IC A L PUBLICATIO N WESTCODE $ SEMICONDUCTORS DP300 ISSU E 1 May, 1980 Stud-Base Silicon Rectifier Diodes Type PHN/PHR300 380amperes average: up to 1500 volts VRRM R A T IN G S Maximum values at 180°C Tj unless stated otherwise RATIN G SYM BO L
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PHN/PHR300
DP300
380amperes
83000A
35000A
SW06PHR
sw06phr300
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Westinghouse diode
Abstract: SW06PHR300 westinghouse DIODES DP300 Hawker westinghouse 12 P300
Text: 9 7 0 9 9 55 WESTCODE SEMICONDUCTORS DE I ^ T D ^ S S OODlMtil 7 | . T-ot- 23 3^C 0 1 4 6 1 TECHNICAL PUBLICATION WESTCODE SEMICONDUCTORS DP300 ISSUE 1 May, 1980 * Stud-Base Silicon Rectifier Diodes Type PH N /PH R 300 380amperes average: up to 1500 volts Vr r m
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PHN/PHR300
380amperes
DP300
147400A2
17751OA2
Westinghouse diode
SW06PHR300
westinghouse DIODES
DP300
Hawker
westinghouse 12
P300
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AC225
Abstract: AC226
Text: TC74AC273P/F/FW OCTAL P - T Y P E FLIP FLOP W IT H CLEAR The TC74AC273 is an advanced high speed CMOS OCTAL D -TYPE FLIP FLOP fabricated with silicon fat« and double-layer metal wiring C2MOS technology. It achieves the high speed operation sim ilar to equivalent Bipolar Schottky TTL while maintaining the
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TC74AC273P/F/FW
TC74AC273
170MH»
AC-226
AC225
AC226
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