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    P2F 45 Price and Stock

    E-T-A 1410-G111-P2F1-S01-2A

    Circuit Breakers Single pole press-to-reset thermal circuit breaker with extremely fast overload switching performance (R-type TO CBE to EN 60934). Single hole threadneck mounting. Type 1410-G1 features changeover contacts suitable for providing statu
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1410-G111-P2F1-S01-2A 80
    • 1 $9.09
    • 10 $9.09
    • 100 $9.08
    • 1000 $9.08
    • 10000 $9.08
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    E-T-A 1410-G111-P2F1-S01-10A

    Circuit Breakers Single pole press-to-reset thermal circuit breaker with extremely fast overload switching performance (R-type TO CBE to EN 60934). Single hole threadneck mounting. Type 1410-G1 features changeover contacts suitable for providing statu
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1410-G111-P2F1-S01-10A 75
    • 1 $18.01
    • 10 $16.6
    • 100 $11.96
    • 1000 $10.9
    • 10000 $10.9
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    E-T-A 1410-G111-P2F1-S01-4A

    Circuit Breakers Single pole press-to-reset thermal circuit breaker with extremely fast overload switching performance (R-type TO CBE to EN 60934). Single hole threadneck mounting. Type 1410-G1 features changeover contacts suitable for providing statu
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1410-G111-P2F1-S01-4A 50
    • 1 $16.63
    • 10 $15.34
    • 100 $11.48
    • 1000 $9.48
    • 10000 $9.48
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    E-T-A 1410-G110-P2F1-S01-1.5A

    Circuit Breakers Single pole press-to-reset thermal circuit breaker with extremely fast overload switching performance (R-type TO CBE to EN 60934). Single hole threadneck mounting. Type 1410-G1 features changeover contacts suitable for providing statu
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1410-G110-P2F1-S01-1.5A 47
    • 1 $18.59
    • 10 $15.73
    • 100 $11.39
    • 1000 $10.49
    • 10000 $10.49
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    E-T-A 1410-G110-P2F1-S01-0.63A

    Circuit Breakers Single pole press-to-reset thermal circuit breaker with extremely fast overload switching performance (R-type TO CBE to EN 60934). Single hole threadneck mounting. Type 1410-G1 features changeover contacts suitable for providing statu
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1410-G110-P2F1-S01-0.63A 44
    • 1 $12.83
    • 10 $12.15
    • 100 $11.19
    • 1000 $10.29
    • 10000 $10.29
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    Find more P2F 45 price and stock on Findchips.com

    P2F 45 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    microwave antenna

    Abstract: P2F-52 p2f 43 parabolic microwave antenna Andrew antennas microwave antenna andrew EIA-195-C
    Text: Terrestrial Microwave Antenna Products P2F-52 Antenna 0.6m 2ft Parabolic Antenna A ndrew 52 series antennas are designed to meet the requirements of the 5 GHz unlicensed bands. This antenna uses proprietary technology to deliver superior electrical performance.


    Original     		P2F-52 microwave antenna p2f 43 parabolic microwave antenna Andrew antennas microwave antenna andrew EIA-195-C PDF

    PHEMT marking code a

    Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		FPD4000AF FPD4000AF PHEMT marking code a FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A PDF

    transistor SMD P2F

    Abstract: atc600s smd p2f transistor smd marking code j6 PHEMT marking code a atc600 smd p2f FPD4000AF MIL-HDBK-263 Filtronic Components
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F atc600s smd p2f transistor smd marking code j6 PHEMT marking code a atc600 smd p2f MIL-HDBK-263 Filtronic Components PDF

    transistor P2F

    Abstract: ON MARKING P2F p2f transistor PZT2907AT1G PZT2907AT3 on semiconductor p2f
    Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PZT2907AT1 OT-223 PZT2222AT1 transistor P2F ON MARKING P2F p2f transistor PZT2907AT1G PZT2907AT3 on semiconductor p2f PDF

    transistor SMD P2F

    Abstract: smd p2f transistor atc600s FPD4000AF PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8
    Text: FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F smd p2f transistor atc600s PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8 PDF

    transistor SMD P2F

    Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE PDF

    transistor P2F

    Abstract: ON MARKING P2F sot223 p2f PZT2907AT1G SOT-223 P2f p2F 45 PZT2222AT1 PZT2907AT3 PZT2907AT1 PZT2907AT3G
    Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PZT2907AT1 OT-223 PZT2222AT1 OT-223 transistor P2F ON MARKING P2F sot223 p2f PZT2907AT1G SOT-223 P2f p2F 45 PZT2222AT1 PZT2907AT3 PZT2907AT1 PZT2907AT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original     		FPD2000AS FPD2000AS 350mA PDF

    p2f sot-223

    Abstract: PZT2907AT1G MARKING P2F transistor P2F on semiconductor p2f p2F 45 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3
    Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1/D p2f sot-223 PZT2907AT1G MARKING P2F transistor P2F on semiconductor p2f p2F 45 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3 PDF

    Untitled

    Abstract: No abstract text available
    Text: PZT2907AT1, SPZT2907AT1G Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


    Original     		PZT2907AT1, SPZT2907AT1G OT-223 PZT2222AT1 OT-223 PZT2907AT1/D PDF

    sot-223 body marking D K Q F

    Abstract: transistor P2F on semiconductor p2f SPZT2907AT1G p2F 45 sot-223 body marking A G
    Text: PZT2907AT1, SPZT2907AT1G Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


    Original     		PZT2907AT1, SPZT2907AT1G OT-223 PZT2222AT1 AEC-Q101 PZT2907AT1/D sot-223 body marking D K Q F transistor P2F on semiconductor p2f SPZT2907AT1G p2F 45 sot-223 body marking A G PDF

    p2f sot-223

    Abstract: PZT2907AT1G transistor P2F on semiconductor p2f MARKING P2F p2F 45 PZT2907AT1G data AYW marking code IC DATASHEET OF IC 713 1N916
    Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1/D p2f sot-223 PZT2907AT1G transistor P2F on semiconductor p2f MARKING P2F p2F 45 PZT2907AT1G data AYW marking code IC DATASHEET OF IC 713 1N916 PDF

    transistor P2F

    Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz


    Original     		FPD2000AS FPD2000AS 350mA transistor P2F p2f 250 PHEMT marking code a p2F 45 MIL-HDBK-263 40 P1dB 2W transistor marking code 1325 PDF

    Untitled

    Abstract: No abstract text available
    Text: PZT2907A PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http://onsemi.com


    Original     		PZT2907A OT-223 PZT2222AT1 AEC-Q101 PZT2907AT1/D PDF

    transistor SMD P2F

    Abstract: transistor smd marking KA smd transistor p1p SMD Code p2f transistor smd P2B TRANSISTOR SMD CODE PACKAGE SOT89 smd p2f TRANSISTOR p1p ON MARKING P2F p2f smd
    Text: SMD Switching Transistors SMD® Switching Transistors Description Mechanical Data Philips Components switching transistors are fabricated using gold doping to reduce the minority carriers in the junction, thus improving the transition performance of the


    OCR Scan     		OT-23, OT-89 OT-223, PMBT4401 PMBT4403 PXT2222A PXT2907A PXT4401 PXT4403 PZT2222A transistor SMD P2F transistor smd marking KA smd transistor p1p SMD Code p2f transistor smd P2B TRANSISTOR SMD CODE PACKAGE SOT89 smd p2f TRANSISTOR p1p ON MARKING P2F p2f smd PDF

    5cp smd

    Abstract: smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23
    Text: General Purpose SMD PNP Transistors 11 General Purpose SMD® PNP Transistors Description Mechanical Data Philips Components general purpose transistors combine the highest quality standards with state-of-the-art pro­ duction equipment to fulfill the need for generic, low-cost


    OCR Scan     		OT-23 OT-89 OT-143 OT-223 OT-223 5cp smd smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM684000A Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft October 26th 1993 Advance 0.1 Revise December 9th 1994 Prelim inary 0.2 Revise - Changed Operating current Icc2; 80m A -> 90mA


    OCR Scan     		KM684000A 512Kx8 100ns PDF

    motorola p1f

    Abstract: P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING
    Text: SOT-223 Devices Maximum die size 80 mil x 100 mil CASE 318E-04 Plastic-Encapsulated General Purpose Amplifiers Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h p E @ lc Device I Max mA Marking V BR CEO Min I BH 80 40 250 150 80 40 25 150 NPN I BCP56T1


    OCR Scan     		OT-223 318E-04 BCP56T1 BCP53T1 PZT2222AT1 PZT2907AT1 BSP52T1 PZTA14T1 motorola p1f P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: JfcKRL Wirewound Power Resistors M IL-R - M IL-R -2 6 KRL 39007 STYLE WATTAGE W OR KING M AXIM UM RA TING VOLTAGE RESISTANCE U V U V P & C SERIES D IM E N S IO N S LENG TH IN O HM S +.062 +.010 LEAD AW G DIAM ETER +.032 (+.010) C-1/4 .5 1.0 18 20 3.4K fi


    OCR Scan     		10KiJ 100il; PDF

    Untitled

    Abstract: No abstract text available
    Text: 1CT i 1CT lOOOpF 2 K V SHIELD ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P2-P3 (P2-F (P4-P5) (P4P7-P8) (P9-P10) 2.0 TURNS RATIO: (P2-P3) : (P4-P5) : (P7-P8) : (P9-P10) 350uH 350uH 350uH 350uH (J1 - J2 ) (J3 - J6 ) (J4 - J5 ) : (J7 - J8 ) : : : : 1CT 1CT


    OCR Scan     		P9-P10) 350uH 10OKHz, PDF

    PMBT2907A

    Abstract: transistor P2F transistor marking p2f PMBT2907
    Text: Philips Semiconductors Product specification PNP switching transistors PMBT2907; PMBT2907A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear amplification.


    OCR Scan     		PMBT2907; PMBT2907A PMBT2222 PMBT2222A. PMBT2907 PMBT2907A transistor P2F transistor marking p2f PDF

    ZT2907A

    Abstract: PZT2907AT3 ON MARKING P2F
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E p itaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    OCR Scan     		OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 ZT2907A ON MARKING P2F PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 & KRL KRL STYLE C-l/4 P-l/2 C-l/2 (P-1A) C-1A C-1B (P-1C) C-1C C-1D (P-2) C-2 (P-2A) C-2A C-2B (P-2C) C-2C (P-2D) C-2D (P-2E) C-2E (P-2F) C-2F (P-3) C-3 C-4 (P-5) C-5 (P-6) C-6 C-7 C-7A C-10A P & C SERIES Wlrewound Power Resistors MIL-R-26 MIL-R39007 RW-70


    OCR Scan     		C-10A MIL-R-26 MIL-R39007 RW-70 RW-79 RWR-71 RW-69 RW-74 RW-67 RWR-74 PDF

    Untitled

    Abstract: No abstract text available
    Text: PZT2907AT1* M A X IM U M R A T IN G S Rating Collector-Emitter Voltage Symbol Value CASE 318E-04, STYLE 1 TO-261AA Unit v CEO -6 0 Vdc Collector-Base Voltage VCBO -6 0 Vdc Emitter-Base Voltage Ve b O - 5.0 Vdc Collector Current 'c -6 0 0 mAdc Total Power Dissipation, T ^ = 25 ‘C*


    OCR Scan     		PZT2907AT1* PDF