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    P21N6 Search Results

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    P21N6 Price and Stock

    STMicroelectronics STP21N65M5

    MOSFET N-CH 650V 17A TO220AB
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    DigiKey STP21N65M5 Tube 2,110 1
    • 1 $4.33
    • 10 $4.33
    • 100 $4.33
    • 1000 $2.03574
    • 10000 $2.03574
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    Avnet Americas STP21N65M5 Tube 2,000 14 Weeks 1,000
    • 1 -
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    • 1000 $2.035
    • 10000 $1.91529
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    Mouser Electronics STP21N65M5 969
    • 1 $4.08
    • 10 $4.08
    • 100 $2.07
    • 1000 $2.03
    • 10000 $2.03
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    STMicroelectronics STP21N65M5 969 1
    • 1 $4
    • 10 $4
    • 100 $2.03
    • 1000 $2
    • 10000 $2
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    TME STP21N65M5 1
    • 1 $5.27
    • 10 $4.75
    • 100 $3.77
    • 1000 $3.52
    • 10000 $3.52
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    ComSIT USA STP21N65M5 220
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    Avnet Silica STP21N65M5 15 Weeks 50
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    EBV Elektronik STP21N65M5 15 Weeks 50
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    Win Source Electronics STP21N65M5 136,050
    • 1 -
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    • 100 $1.16
    • 1000 $0.942
    • 10000 $0.942
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    Rochester Electronics LLC FCP21N60N

    FCP21N60 - N-CHANNEL, MOSFET
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    DigiKey FCP21N60N Bulk 130
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    • 1000 $2.31
    • 10000 $2.31
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    FCP21N60N Tube 130
    • 1 -
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    • 1000 $2.31
    • 10000 $2.31
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    onsemi FCP21N60N

    MOSFET N-CH 600V TO220-3
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    DigiKey FCP21N60N Tube
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    Rochester Electronics FCP21N60N 6,400 1
    • 1 $2.22
    • 10 $2.22
    • 100 $2.09
    • 1000 $1.89
    • 10000 $1.89
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    Vishay Siliconix IRFP21N60L

    MOSFET N-CH 600V 21A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFP21N60L Tube 500
    • 1 -
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    • 1000 $8.7875
    • 10000 $8.7875
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    Vishay Siliconix IRFP21N60LPBF

    MOSFET N-CH 600V 21A TO247-3
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    DigiKey IRFP21N60LPBF Tube 500
    • 1 -
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    • 1000 $3.7
    • 10000 $3.7
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    ComSIT USA IRFP21N60LPBF 175
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    P21N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G P21N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M P21N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high


    OCR Scan     		PDF P21N60E/D GP21N60E 21A-06 O-220AB

    p21n6

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G P21N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M P21N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan     		PDF P21N60E/D p21n6