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    P-MOS CATALOG Search Results

    P-MOS CATALOG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    P-MOS CATALOG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Yamatake HPX T1

    Abstract: HPX-nt1 AD42433E yamatake FL Yamatake hpx Yamatake yamatake HPX-NT2 Yamatake HPX V1 yamatake hpx series on delay timer
    Text: No. SR. Yamatake Corporation CATALOG LISTING OUTPUT TYPE H PX-NT1 N-MOS F E T OPEN DRAIN H P X -N T 2 P-MOS F E T OPEN DRAIN SPECIFICATIONS DIMENSIONS CATALOG LISTING CORD LENGTH H P X -N T * 2000m in. H P X -N T * -L 0 5 5000m in. H P X -N T *-L 1 0 10000min.


    OCR Scan     		2000min. 5000min. 10000min. AD42433E Yamatake HPX T1 HPX-nt1 yamatake FL Yamatake hpx Yamatake yamatake HPX-NT2 Yamatake HPX V1 yamatake hpx series on delay timer PDF

    GE4953

    Abstract: Tech MOS Technology schematic diagram TECH 2
    Text: GEMOS MOS FIELD EFFECT TRANSISTOR GE4953 P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE4953 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of


    Original     		GE4953 GE4953 Tech MOS Technology schematic diagram TECH 2 PDF

    MC14050BCP

    Abstract: MC14049BCP MC14050BD
    Text: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power


    Original     		MC14049B, MC14050B MC14049B MC14050BDR2 751B-05 MC14050BDT 948F-01 MC14050BDTEL MC14050BCP MC14049BCP MC14050BD PDF

    9435 transistor

    Abstract: ge9435 GE943 Tech MOS Technology 9435 sop-8 schematic diagram TECH 2 9435 so package
    Text: GEMOS MOS FIELD EFFECT TRANSISTOR GE9435 P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE9435 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of


    Original     		GE9435 GE9435 9435 transistor GE943 Tech MOS Technology 9435 sop-8 schematic diagram TECH 2 9435 so package PDF

    14572U

    Abstract: No abstract text available
    Text: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity


    Original     		MC14572UB MC14572UBCP 14572U MC14572UBD MC14572UBDR2 751B-05 751B-05 PDF

    MC14569B

    Abstract: MC14569BCP mc14526b
    Text: MC14569B Programmable Divide-By-N Dual 4-Bit Binary/BCD Down Counter The MC14569B is a programmable divide–by–N dual 4–bit binary or BCD down counter constructed with MOS P–channel and N–channel enhancement mode devices complementary MOS in a monolithic structure.


    Original     		MC14569B MC14568B MC14569BCP MC14569BDT 948F-01 MC14569BDW 751G-03 mc14526b PDF

    MIL-STD-806

    Abstract: tc5000 TC40H000 rca thyristor manual TC4069 OSCILLATOR tc-74ic mc14500b mc14500 shockley diode application IC - TC4001BP
    Text: OUTLINE 1. C2HOS IC Family 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted


    OCR Scan     		PDF

    MC14070B

    Abstract: Mc14077b
    Text: MC14070B, MC14077B CMOS SSI Quad Exclusive “OR” and “NOR” Gates The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use


    Original     		MC14070B, MC14077B MC14070B 140xxB MC140xxBCP MC14070BD 51A-03 MC14070BDR2 PDF

    TC4069 OSCILLATOR

    Abstract: TC40HXXX tc4011bp applications MC14500B Industrial Control Unit cmos integrated circuits TC4069 equivalent
    Text: OUTLINE 1. C 2M0S I C F a mi ly 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Concise Catalogue 1996 Philips Semiconductors DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES RF POWER MOS TRANSISTORS type number PL PEP ^DS (W) (V) G p (dB) package 20.1) 23 20.1) 17 20 SOT123 SOT 123 SOT121 SOT121


    OCR Scan     		OT123 OT121 BLF145 BLF175 PDF

    Voltage regulator 78L05

    Abstract: BLF278 78los philips ferroxcube 4c6 4C6 toroid 2222 809 09006 capacitor film dielectric trimmer PTFE 100pf 78L05 transistor bc 245 capacitor 17 ij k 63 MKT
    Text: P hilips Sem iconductors ^ 53^31 003002A TM • APX Product specification VHF push-pull power MOS transistor BLF278 AMER P H I L I P S / D I S C R E T E PIN CONFIGURATION FEATU RES • • • • b'lE High power gain Easy power control Good thermal stability


    OCR Scan     		BLF278 OT262 MCA982 Voltage regulator 78L05 BLF278 78los philips ferroxcube 4c6 4C6 toroid 2222 809 09006 capacitor film dielectric trimmer PTFE 100pf 78L05 transistor bc 245 capacitor 17 ij k 63 MKT PDF

    BLF177

    Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244
    Text: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control


    OCR Scan     		BLF177 OT121 MBA379 philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors bt.S3R31 O O E ^ m HT5 W A P X P roduct spe cifica tion VHF power MOS transistor BLF225 — N AUER PHILIPS/DISCRETE FEATURES blE » PIN CONFIGURATION • Easy power control • Good thermal stability • Withstands full load mismatch.


    OCR Scan     		S3R31 BLF225 OT123 -SOT123 bbS3T31 PDF

    Untitled

    Abstract: No abstract text available
    Text: P hilips Sem iconductors bbSBIB l □ D B R T f l ci 7bS A P X ’roductspecification VHF push-pull power MOS transistor BLF246B N AUER P H IL IP S /D IS C R E T E FEATURES b^E ]> PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability


    OCR Scan     		BLF246B OT161 OT161 PDF

    transistor smd code marking nc g

    Abstract: smd diode marking code t3 smd transistor marking code 24
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH205 SYMBOL • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = -12 V


    Original     		BSH205 BSH205 transistor smd code marking nc g smd diode marking code t3 smd transistor marking code 24 PDF

    SmD TRANSISTOR SP

    Abstract: transistor smd code marking nc g SP SOT23 TRANSISTOR SMD MARKING CODE 056 BSH202 TRANSISTOR SMD MARKING CODE SP
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH202 SYMBOL • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = -30 V s


    Original     		BSH202 BSH202 SmD TRANSISTOR SP transistor smd code marking nc g SP SOT23 TRANSISTOR SMD MARKING CODE 056 TRANSISTOR SMD MARKING CODE SP PDF

    TRANSISTOR SMD MARKING CODE 1v

    Abstract: transistor smd code marking nc g
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH207 SYMBOL • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = -12 V


    Original     		BSH207 BSH207 OT457 OT457 01-Aug-98 TRANSISTOR SMD MARKING CODE 1v transistor smd code marking nc g PDF

    TRANSISTOR SMD 019 CODE PACKAGE SOT23

    Abstract: BSH201 marking BSH201 TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE X D transistor smd code marking nc g TRANSISTOR SMD MARKING CODE GFs
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH201 SYMBOL • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = -60 V s


    Original     		BSH201 BSH201 TRANSISTOR SMD 019 CODE PACKAGE SOT23 BSH201 marking TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE X D transistor smd code marking nc g TRANSISTOR SMD MARKING CODE GFs PDF

    BSH203 marking

    Abstract: sot23 marking BSH203 TRANSISTOR SMD MARKING CODE SP transistor smd code marking nc g BSH203 ordering information TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE UA BSH203/PLP
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH203 SYMBOL • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = -30 V


    Original     		BSH203 BSH203 BSH203 marking sot23 marking BSH203 TRANSISTOR SMD MARKING CODE SP transistor smd code marking nc g BSH203 ordering information TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE UA BSH203/PLP PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary »pacification T HF/VHF power MOS transistor PHILIPS INT ER NATIONAL FEATURES - 3 V - 0 5 BLF221B 5bE P • 7110fl5b □ D M 3 7 4 el 37M H P H I N PIN CONFIGURATION • High power gain • Easy power control • Gold metallization


    OCR Scan     		BLF221B 7110fl5b paM37Sti MRA910 PDF

    BLF346

    Abstract: 222203038109 sot-119 MRA931
    Text: P hilips S em iconductors bbsa'm DOBOOMb ‘i m I APX Product specification VHF power MOS transistor BLF346 N AMER PHIL I P S / D I S C R E T E FEATURES PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


    OCR Scan     		00300S1 OT119 -SOT119 MCB224- BLF346 222203038109 sot-119 MRA931 PDF

    transistor tt 2222

    Abstract: TT 2222 philips metal film resistor BLF543 UBA001 WCA910 capacitor philips 425 stripline multilayer ceramic capacitor philips philips resistor 2322
    Text: Philips Sem iconductors [^ 5 3 ^ 3 1 0030115 121 • APX ^ ro d u c ts p e c m Ä BLF543 UHF power MOS transistor b * ìE N AMER P H I L I P S / D I S C R E T E D ' PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability


    OCR Scan     		bbS3T31 OT171 PINNING-SOT171 BLF543 MCA90E transistor tt 2222 TT 2222 philips metal film resistor BLF543 UBA001 WCA910 capacitor philips 425 stripline multilayer ceramic capacitor philips philips resistor 2322 PDF

    Philips 2222 capacitor

    Abstract: philips capacitor philips capacitor 2222
    Text: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control


    OCR Scan     		BLF177 OT121 Philips 2222 capacitor philips capacitor philips capacitor 2222 PDF

    ferroxcube 4322 020 97171

    Abstract: philips ferroxcube 4c6 D1 Marking SOT123 BLF175 RF transistor marking code Mt UBB0711 bje resistor MCA264 CA-272 ferroxcube 4322
    Text: P h n ip ^ e m ic o n d u c to i^ ^ ^ ^ • b b5 3 T 31 □□2 T6 bM 4□4 WÊ A P X Product specification HF/VHF power MOS transistor BLF175 N AMER P H I L I P S / D I S C R E T E FEATURES • • • • • • PIN CONFIGURATION High power gain Low intermodulation distortion


    OCR Scan     		BLF175 OT123 bb53131 BLF175 MCA25S ferroxcube 4322 020 97171 philips ferroxcube 4c6 D1 Marking SOT123 RF transistor marking code Mt UBB0711 bje resistor MCA264 CA-272 ferroxcube 4322 PDF