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    P-CHANNEL RF AMPLIFIER Search Results

    P-CHANNEL RF AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL RF AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ARF301

    Abstract: No abstract text available
    Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF


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    PDF ARF301 45MHz ARF301 45MHz. ARF300 micnotes/1810

    ARF301

    Abstract: "RF MOSFET" 300W ARF300
    Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF


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    PDF ARF301 45MHz ARF301 45MHz. ARF300 "RF MOSFET" 300W

    Untitled

    Abstract: No abstract text available
    Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF


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    PDF ARF301 45MHz ARF301 45MHz. ARF300

    Untitled

    Abstract: No abstract text available
    Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


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    PDF ARF300 45MHz ARF300 45MHz. ARF301 Rating-4948 micnotes/1810

    Untitled

    Abstract: No abstract text available
    Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


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    PDF ARF300 45MHz ARF300 45MHz. ARF301 micnotes/1810

    4948

    Abstract: ARF300 ARF301 50VDSS
    Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


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    PDF ARF300 45MHz ARF300 45MHz. ARF301 4948 50VDSS

    4948

    Abstract: ARF300 ARF301 class E power amplifier 13.56 300w class ab amplifier microsemi application note
    Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


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    PDF ARF300 45MHz ARF300 45MHz. ARF301 micnotes/1810 4948 class E power amplifier 13.56 300w class ab amplifier microsemi application note

    2n5247

    Abstract: fairchild top marking Package Marking Information Fairchild semiconductor marking information marking code fairchild fairchild marking code
    Text: Product Folder - Fairchild P/N 2N5247 - N-Channel RF Amplifier Advanced Search Google Search PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD Related Links 2N5247


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    PDF 2N5247 2N5247 com/pf/2N/2N5247 html01/05/2005 fairchild top marking Package Marking Information Fairchild semiconductor marking information marking code fairchild fairchild marking code

    J300

    Abstract: J300_D26Z fairchild marking codes fairchild MARKING MY J300D marking code fairchild
    Text: Product Folder - Fairchild P/N J300 - N-Channel RF Amplifier Advanced Search Google Search PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD Related Links J300 Request samples


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    PDF com/pf/J3/J300 J300 J300_D26Z fairchild marking codes fairchild MARKING MY J300D marking code fairchild

    marking code fairchild

    Abstract: fairchild date code amplifier marking code a DATE CODE FAIRCHILD
    Text: Product Folder - Fairchild P/N PN4416 - N-Channel RF Amplifier Careers | Sitemap | Home Go DATASHEETS, SAMPLES, BUY TECHNICAL INFORMATION APPLICATIONS DESIGN CENTER SUPPORT COMPANY INVESTORS MY FAIRCHILD Home >> Find products >> Related Links PN4416 Request samples


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    PDF PN4416 PN4416 com/pf/PN/PN4416 marking code fairchild fairchild date code amplifier marking code a DATE CODE FAIRCHILD

    SELF vk200

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER


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    PDF MRF134 68-ohm AN215A SELF vk200

    136y

    Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up


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    PDF MRF136 MRF136Y MRF136Y AN215A DL110 136y 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068

    MRF161

    Abstract: J141 mosfet fet j141
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF161 The RF MOSFET Line 5.0 W 2 .0 -4 0 0 MHz N-CHANNEL MOS BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR . . . designed fo r w id e b a n d large-signal a m p lifie r and o scillato r


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    PDF MRF161 MRF161, MRF161 J141 mosfet fet j141

    RF MOSFETs

    Abstract: "RF MOSFETs"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF173* M RF173CQ The RF MOSFET Line RF P o w er Field E ffe c t Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 200 MHz


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    PDF RF173* RF173CQ MRF173/CQ. AN721, MRF173 MRF173CQ RF MOSFETs "RF MOSFETs"

    749 MOSFET TRANSISTOR motorola

    Abstract: RF154 dss125
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF154 The RF MOSFET Line RF P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode MOSFET 600 W, 50 V. 80 MHz N-CHANNEL BROADBAND RF POWER MOSFET . . . designed prim arily for linear large*signal output stages in the 2-100 MHz frequency range.


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    PDF RF154 749 MOSFET TRANSISTOR motorola RF154 dss125

    MRF162

    Abstract: motorola TE 901 Triode rs 733 P011t
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF162 The RF MOSFET Line 15 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER d e s ig n e d fo r w id e b a n d la rg e -s ig n a l o u tp u t and d riv e r a p p lic a ­


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    PDF MRF162 MRF162, MRF162 AN-215A motorola TE 901 Triode rs 733 P011t

    3SK132

    Abstract: 3SK132A si2494 g2sc ETEL
    Text: MOS FIELD EFFECT TRANSISTOR 3SK132A RF AM P. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4P IN M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Suitable for use as RF amplifier in UHF TV tuner. RF Amp. for half wave length resonator : X/2


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    PDF 3SK132A 3SK132 3SK132A si2494 g2sc ETEL

    S3 TRIO 64

    Abstract: AY 5 4007 0062g GS 069 HF
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF136 MRF136Y The RF M OSFET Line RF P o w e r Field E ffe c t T ra n sisto rs N-Channel Enhancement-Mode M OSFETs 15 W, 30 W 2-400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed fo r w id e b a n d large-signal a m p lifie r and o scilla to r app licatio n s in the 2 to


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    PDF MRF136 MRF136Y MRF136 MRF136Y S3 TRIO 64 AY 5 4007 0062g GS 069 HF

    n-channel enhancement mode vmos power fet

    Abstract: DV1201K
    Text: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications


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    PDF DV1201K DV1201K n-channel enhancement mode vmos power fet

    J141 mosfet

    Abstract: MRF-161 fet j141 mrf161 2191F SELF vk200 k 575
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er Field E ffe c t lY an sisto r N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance


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    PDF MRF161, MRF161 AN215A J141 mosfet MRF-161 fet j141 2191F SELF vk200 k 575

    BATWING sop-16

    Abstract: 990520
    Text: RF RF2360 Preliminary MICRO‘DEVICES LINEAR GENERAL PURPOSE AM PLIFIER T y p ic a l A p p lic a tio n s Laser Diode Driver • Cable Modems Return Channel Amplifier • Broadband Gain Blocks Base Stations LINEAR CATV AMPLIFIERS • CATV Distribution Amplifiers


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    PDF RF2360 RF2360 OP-16 1000MHz, RF2360PCBA 500MHz BATWING sop-16 990520

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0 .0 5 pF T Y P .


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    PDF 3SK131

    Untitled

    Abstract: No abstract text available
    Text: RF RF2320 Preliminary MICRO‘DEVICES LINEAR GENERAL PURPOSE AM PLIFIER T y p ic a l A p p lic a tio n s Laser Diode Driver • Cable Modems Return Channel Amplifier • Broadband Gain Blocks Base Stations LINEAR CATV A M P L IFIE R S • CATV Distribution Amplifiers


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    PDF RF2320 RF2320 OP-16 1000MHz, 1000MHz

    15J02

    Abstract: 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 F5015
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5015 Advance Information The RF MOSFET Line M o to ro la P re fe rre d D ev ice RF P o w er Field E ffe c t T ransistor N-Channei Enhancement-Mode 15 W, 512 MHz, 12.5 VOLTS N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequen­


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    PDF F5015 RF5015 AN215A, MRF5015 15J02 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 F5015