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INA Bearings ZARF30105-TV-A Needle Roller/Axial Cylindrical RB, 30mm ID, 105mm OD, 66mm Width \| INA Bearings (Schaeffler) ZARF30105-TV-A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	ZARF30105-TV-A	Bulk		2 Weeks	1	1 $3484.58 10 $3484.58 100 $3484.58 1000 $3484.58 10000 $3484.58	Get Quote
INA Bearings ZARF30105-L-TV-A Needle Roller/Axial Cylindrical RB, 30mm ID, 105mm OD, 82mm Width \| INA Bearings (Schaeffler) ZARF30105-L-TV-A
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RS	ZARF30105-L-TV-A	Bulk		2 Weeks	1	1 $3544.29 10 $3544.29 100 $3544.29 1000 $3544.29 10000 $3544.29	Get Quote
Harwin F30-10008045R Board to Board & Mezzanine Connectors FLECTO 0.8mm pitch Female 80 way Signal (6.80mm)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	F30-10008045R	Reel	1,000		500	1 - 10 - 100 - 1000 $2.92 10000 $2.81	Buy Now
Harwin F30-10106045R Board to Board & Mezzanine Connectors FLECTO 0.8mm pitch Female 60 way Signal (7.80mm)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	F30-10106045R	Reel	800		400	1 - 10 - 100 - 1000 $1.95 10000 $1.91	Buy Now
Harwin F30-10108045R Board to Board & Mezzanine Connectors FLECTO 0.8mm pitch Female 80 way Signal (7.80mm)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	F30-10108045R	Reel	800		400	1 - 10 - 100 - 1000 $2.67 10000 $2.33	Buy Now

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ARF301 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ARF301		Microsemi	RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 125; BVDSS (V): 500; RqJC (°C/Watt): 0.15; Case Style: T-11; COO: C-E		Original	PDF

ARF301 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ARF301 Abstract: "RF MOSFET" 300W ARF300 Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF	Original	PDF	ARF301 45MHz ARF301 45MHz. ARF300 "RF MOSFET" 300W
Untitled Abstract: No abstract text available Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF	Original	PDF	ARF300 45MHz ARF300 45MHz. ARF301 micnotes/1810
4948 Abstract: ARF300 ARF301 50VDSS Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF	Original	PDF	ARF300 45MHz ARF300 45MHz. ARF301 4948 50VDSS
ARF300 Abstract: ARF301 250nH 390PF 2.5 160V 431nH Text: Application Note 1808 April 2010 ARF300 – ARF301 In N-N and N-P Half Bridge RF Generators with Pulse and Sine Drive George J. Krausse Microsemi Corp. RF Power Products Group 405 SW Columbia St. Bend, OR 97702 USA gkrausse@microsemi.com and Richard Frey, P.E. K4XU	Original	PDF	ARF300 ARF301 ARF300 ARF301 250nH 390PF 2.5 160V 431nH
4948 Abstract: ARF300 ARF301 class E power amplifier 13.56 300w class ab amplifier microsemi application note Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF	Original	PDF	ARF300 45MHz ARF300 45MHz. ARF301 micnotes/1810 4948 class E power amplifier 13.56 300w class ab amplifier microsemi application note
ARF301 Abstract: No abstract text available Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF	Original	PDF	ARF301 45MHz ARF301 45MHz. ARF300 micnotes/1810
Untitled Abstract: No abstract text available Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF	Original	PDF	ARF300 45MHz ARF300 45MHz. ARF301 Rating-4948 micnotes/1810
Untitled Abstract: No abstract text available Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF	Original	PDF	ARF301 45MHz ARF301 45MHz. ARF300
SP6-P Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	PDF	10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter