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    P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Search Results

    P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor" June 1996 NDS8433 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDS8433 PDF

    BSS84

    Abstract: ROB SOT23 BSS110
    Text: National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		BSS84 BSS110 BSS84: BSS110: b501130 0Q401fl3 ROB SOT23 BSS110 PDF

    NDH8502P

    Abstract: No abstract text available
    Text: N September 1996 PRELIMINARY NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		NDH8502P NDH8502P PDF

    NDT2955

    Abstract: No abstract text available
    Text: September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDT2955 NDT2955 PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		NDC7003P PDF

    NDT2955

    Abstract: No abstract text available
    Text: N September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This


    Original     		NDT2955 NDT2955 PDF

    SSOT-6

    Abstract: CBVK741B019 F63TNR FDC633N NDC7003P
    Text: March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		NDC7003P SSOT-6 CBVK741B019 F63TNR FDC633N NDC7003P PDF

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor" A p ril 1995 NDS9435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDS9435 -30TION PDF

    NDS9407

    Abstract: diode se-1.5
    Text: National Semiconductor" May 1996 NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDS9407 L5D1130 NDS9407 diode se-1.5 PDF

    TRANSISTOR 2SC 950

    Abstract: NDT454P c25f
    Text: ß National Semiconductor" June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDT454P Hig13. OT-223 Vos--10V bS0113D D0401SE TRANSISTOR 2SC 950 NDT454P c25f PDF

    NDH8504P

    Abstract: No abstract text available
    Text: N February 1997 NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    Original     		NDH8504P NDH8504P PDF

    NDS336P

    Abstract: No abstract text available
    Text: N August 1996 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density,


    Original     		NDS336P NDS336P PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		NDS8934 PDF

    NDS8435A

    Abstract: 79A8
    Text: N December 1996 PRELIMINARY NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    Original     		NDS8435A NDS8435A 79A8 PDF

    NDH8504P

    Abstract: No abstract text available
    Text: N August 1996 ADVANCE INFORMATION NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    Original     		NDH8504P 156oC/W NDH8504P PDF

    NDH8304P

    Abstract: No abstract text available
    Text: N August 1996 ADVANCE INFORMATION NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    Original     		NDH8304P 156oC/W NDH8304P PDF

    NDH8302P

    Abstract: Note140
    Text: N May 1996 ADVANCE INFORMATION NDH8302P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology.


    Original     		NDH8302P 135oC/W 0025in2 NDH8302P Note140 PDF

    NDS8934

    Abstract: No abstract text available
    Text: March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		NDS8934 NDS8934 PDF

    NDH8502P

    Abstract: field effect transistors
    Text: N May 1996 ADVANCE INFORMATION NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    Original     		NDH8502P NDH8502P field effect transistors PDF

    FDC634P

    Abstract: SOIC-16
    Text: November 1997 FDC634P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		FDC634P OT-23 FDC634P SOIC-16 PDF

    NDS8934

    Abstract: siemens 1120
    Text: March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		NDS8934 NDS8934 siemens 1120 PDF

    FDR856P

    Abstract: SOIC-16 PF740
    Text: March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		FDR856P OT-23 FDR856P SOIC-16 PF740 PDF

    NDS9953A

    Abstract: No abstract text available
    Text: February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS9953A NDS9953A PDF

    9435a

    Abstract: FDS9435A SOIC-16
    Text: May 1999 FDS9435A Single P-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		FDS9435A OT-23 OT-223 SOIC-16 FDS9435A 9435a SOIC-16 PDF