Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
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RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: TPCP8407 MOSFETs Silicon P-/N-Channel MOS U-MOS /U-MOS TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.)
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TPCP8407
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Untitled
Abstract: No abstract text available
Text: TPCP8406 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPCP8406 1. Applications • Cell Phones • Motor Drivers 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 33 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 mΩ (typ.) (VGS = 10 V)
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TPCP8406
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Untitled
Abstract: No abstract text available
Text: TPCP8405 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPCP8405 1. Applications • Cell Phones • Motor Drivers 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 24 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 20 mΩ (typ.) (VGS = 10 V)
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TPCP8405
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FET pair n-channel p-channel
Abstract: FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent
Text: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Ed Oxner Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to
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AN804
21-Jun-94
VP0300L
O-226AA
VN0300L
TP0610L
2N7000
FET pair n-channel p-channel
FET P-Channel Switch
logic level complementary MOSFET switch
2n7000 complement
logic level complementary MOSFET
mosfet discrete totem pole drive CIRCUIT
Power MOSFET p-Channel n-channel dual
mosfet power P-Channel N-Channel CIRCUIT
TP0610 series
VN0300L equivalent
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Untitled
Abstract: No abstract text available
Text: ACE1522B P-Channel Enhancement Mode Field Effect Transistor Description Line current interrupter in telephone sets Relay High speed and line transformer drivers. Features • VDS V =-50V, ID=-0.13A RDS(ON)＜10Ω@VGS=-5V Voltage controlled p-channel small signal switch
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ACE1522B
OT-23-3
ACE15ess
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Untitled
Abstract: No abstract text available
Text: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS
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VQ3001J/P
18-Jul-08
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ultrasound transducer circuit driver 1mhz
Abstract: gate-source zener TC6320 Piezoelectric 1Mhz 125OC 27BSC TC6320TG zener diode reverse breakdown voltage 4.5V P-channel MOSFET VGS -25V
Text: TC6320 N- and P- Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC6320TG consists of a high voltage low threshold N-channel and P-channel MOSFET in an SO8 package. Both MOSFETs have integrated gate-source
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TC6320
TC6320TG
TC6320
27BSC
DSFP-TC6320
C112106
ultrasound transducer circuit driver 1mhz
gate-source zener
Piezoelectric 1Mhz
125OC
27BSC
zener diode reverse breakdown voltage 4.5V
P-channel MOSFET VGS -25V
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Untitled
Abstract: No abstract text available
Text: RFP8P10 Data Sheet 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET Title This P-Channel enhancement mode silicon gate power field FP8 effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, 0 relay drivers, and drivers for high power bipolar switching
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RFP8P10
TA17511.
TB334
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si3585
Abstract: mosfet 23 Tsop-6 S1217
Text: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see
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Si3585CDV
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si3585
mosfet 23 Tsop-6
S1217
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Untitled
Abstract: No abstract text available
Text: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see
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Si3585CDV
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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ultrasound transducer circuit driver 1mhz
Abstract: TC6320 TC6320TG-G p-channel 200V Piezoelectric 1Mhz 125OC 27BSC TC6320TG gate-source zener
Text: TC6320 N- and P- Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage low threshold N-channel and P-channel MOSFETs in an SO8 package. Both MOSFETs have integrated gate-source
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TC6320
TC6320
27BSC
DSFP-TC6320
C112106
ultrasound transducer circuit driver 1mhz
TC6320TG-G
p-channel 200V
Piezoelectric 1Mhz
125OC
27BSC
TC6320TG
gate-source zener
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BSP254A
Abstract: BSP254 MDA708
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSP254; BSP254A P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical
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BSP254;
BSP254A
SC13b
SCA54
137107/00/01/pp12
BSP254A
BSP254
MDA708
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BSS110
Abstract: CGY20
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification P-channel enhancement mode
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BSS110
MAM144
CGY2020G
SCA50
647021/1200/01/pp12
BSS110
CGY20
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BSP225
Abstract: BP317 Philips RDS business bsp225/s911
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSP225 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor
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BSP225
SC13b
SCA54
137107/00/01/pp12
BSP225
BP317
Philips RDS business
bsp225/s911
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Untitled
Abstract: No abstract text available
Text: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance
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-200V
TC2320TG
TC2320
TC2320TG
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Untitled
Abstract: No abstract text available
Text: TD3002Y mgs5SS N- and P-Channel Half-Bridge MOSFETs_ SO PACKAGE PRODUCT SUMMARY V BR|DSS N-Channel 60 P-Channel -60 r°?r 5 N-souRCE n~ •d N-GATE o ; (A p -s o u r c e 0.41 10 r r P-GATE ~TI N-DRAIN ~n N-DRAIN ~T~| P-DRAIN ~T~I P-DRAIN
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OCR Scan
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TD3002Y
VNDS06
VPDS06
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TD3001
Abstract: No abstract text available
Text: TD3001Y N- and P-Channel Half-Bridge MOSFETs 'Siliconix incorporated SO PACKAGE PRODUCT SUMMARY N-souRCE r r >d V ’X ’ (A) N-Channel 30 1.5 0.61 P-Channel -30 2 0.39 V (BR)DSS T I N-DRAIN N-GATE r r ~ l~ l N-DRAIN p-souRCE r r ~1~| P-DRAIN P-GATE C E
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TD3001Y
TD3001
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PDF
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GSO 69
Abstract: No abstract text available
Text: bbSB^ai 0023^74 6RD * A P X N AMER PHILIPS/ DISCRE TE b?E ]> BST110 yv P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.
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OCR Scan
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BST110
DS3c17b
GSO 69
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.
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OT223
BSP206
OT223
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PDF
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sot223 p-channel
Abstract: C-MOS transistor p-channel
Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.
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OT223
BSP205
OT223
MCA848
sot223 p-channel
C-MOS transistor p-channel
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PDF
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Untitled
Abstract: No abstract text available
Text: BS250 P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • • • • Low RpSon D irect interface to C MOS
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BS250
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PDF
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BST110
Abstract: P-channel max 083
Text: 711002b GObVTMB 1Ô3 IPH IN BST110 P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers. Features • • • • Very low RpSon
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OCR Scan
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711002b
BST110
200mA
BST110
P-channel
max 083
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PDF
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ARBO
Abstract: UDS protocols DIP17 80X86 Micro Channel for active high tie outputs low 65RD priority arbitration system microchannel mca bus controller
Text: P L X TECHNOLOGY CORP 32E 1> • bflSSlM6! OOODIOÔ 2 « P L X 7-52'33-SS Micro Channel MCA 1200/1210 Micro Channel Controller and Local Arbiter Distinctive Features General Description, • Single chip device performs Micro Channel control and local arbitration
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000D10Ã
21VSS
ARBO
UDS protocols
DIP17
80X86
Micro Channel
for active high tie outputs low
65RD
priority arbitration system
microchannel
mca bus controller
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