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    P CHANNEL POWER MOSFET IRF Search Results

    P CHANNEL POWER MOSFET IRF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL POWER MOSFET IRF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFD9110

    Abstract: TA17541
    Text: IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET Features • 0.7A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD9110 IRFD9110 TA17541

    IRFF9230

    Abstract: No abstract text available
    Text: IRFF9230 Data Sheet January 2002 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET Features • -4.0A, -200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF9230 -200V, -200V IRFF9230

    IRFD9220

    Abstract: No abstract text available
    Text: IRFD9220 Data Sheet January 2002 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD9220 IRFD9220

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 IRF9150 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF9150 -100V, -100V

    P-Channel mosfet 400v

    Abstract: IRF7101
    Text: PD - 95296 IRF7317PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Description l l S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET


    Original     		PDF IRF7317PbF EIA-481 EIA-541. P-Channel mosfet 400v IRF7101

    irf9620

    Abstract: No abstract text available
    Text: IRF9620 Data Sheet Title F96 bt A, 0V, 00 m, July 1999 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of


    Original     		PDF IRF9620 TA17502. irf9620

    Untitled

    Abstract: No abstract text available
    Text: IRFD9110 Data Sheet Title FD 10 bt A, 0V, 00 m, July 1999 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD9110

    Untitled

    Abstract: No abstract text available
    Text: IRFF9130 Data Sheet Title FF9 0 bt A, 0V, 00 m, February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF9130 -100V, -100V

    IRF9510

    Abstract: TA17541
    Text: IRF9510 Data Sheet January 2002 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRF9510 IRF9510 TA17541

    Untitled

    Abstract: No abstract text available
    Text: IRFD9220 Data Sheet Title FD 20 bt A, 0V, 00 m, July 1999 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD9220

    irf9620

    Abstract: No abstract text available
    Text: IRF9620 Data Sheet January 2002 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRF9620 irf9620

    IRFP9240

    Abstract: TA17522
    Text: IRFP9240 Data Sheet January 2002 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRFP9240 IRFP9240 TA17522

    IRFP9140

    Abstract: T0-247 TA17521
    Text: IRFP9140 Data Sheet July 1999 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate power field effect transistor


    Original     		PDF IRFP9140 IRFP9140 T0-247 TA17521

    Untitled

    Abstract: No abstract text available
    Text: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing


    Original     		PDF PD-95262B IRF5803PbF

    IRF7425

    Abstract: MS-012AA
    Text: PD- 94022 IRF7425 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing


    Original     		PDF IRF7425 IRF7425 MS-012AA

    irfp9140

    Abstract: No abstract text available
    Text: IRFP9140 Data Sheet Title FP9 0 bt A, 0V, 00 m, an- 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET Features This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel


    Original     		PDF IRFP9140 irfp9140

    2N7236U

    Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U
    Text: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry


    Original     		PDF PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U MIL-PRF-19500/595] 2N7236U smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U

    IRF7424

    Abstract: No abstract text available
    Text: PD- 94024A IRF7424 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon


    Original     		PDF 4024A IRF7424 IRF7424

    IRF5820

    Abstract: SI3443DV IRF5800 IRF5850
    Text: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF 3947A IRF5850 IRF5850 OT-23 IRF5820 SI3443DV IRF5800

    IRF P CHANNEL MOSFET 10A 100V

    Abstract: 2N7237U P 838 X MOSFET IRFN9240 JANTX2N7237U JANTXV2N7237U smd diode 2F 7A
    Text: PD-91554C IRFN9240 JANTX2N7237U JANTXV2N7237U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -200 Volt, 0.51Ω Product Summary Part Number IRFN9240 ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power


    Original     		PDF PD-91554C IRFN9240 JANTX2N7237U JANTXV2N7237U MIL-PRF-19500/595] IRF P CHANNEL MOSFET 10A 100V 2N7237U P 838 X MOSFET IRFN9240 JANTX2N7237U JANTXV2N7237U smd diode 2F 7A

    Untitled

    Abstract: No abstract text available
    Text: IRF9510 Semiconductor Data Sheet April 1999 -3.0A, -100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancem ent mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRF9510 -100V, O-220AB -100V

    Untitled

    Abstract: No abstract text available
    Text: IRFP9140 Semiconductor April 1999 Data Sheet -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel


    OCR Scan     		PDF IRFP9140 -100V, O-247 -100V 200i2

    1RF7105

    Abstract: 1RF710 irf7105 mosfet MOSFET C65 irf7105 ior 050a
    Text: PD - 9.1097B International IOR Rectifier IRF7105 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching 'P-CHANNEL MOSFET !


    OCR Scan     		PDF 1097B IRF7105 1RF7105 1RF710 irf7105 mosfet MOSFET C65 irf7105 ior 050a

    IRF7319

    Abstract: 49AA
    Text: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch


    OCR Scan     		PDF IRF7319 IRF7319 49AA