P CHANNEL E- MOSFET Search Results
P CHANNEL E- MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TK2R4A08QM |
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MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS |
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XPN1300ANC |
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N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) |
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TK190U65Z |
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MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL |
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TK7R0E08QM |
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MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB |
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SSM6K517NU |
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MOSFET, N-ch, 30 V, 6 A, 0.0391 Ohm@4.5V, UDFN6B |
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P CHANNEL E- MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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100V 60A Mosfet
Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
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IRFU9110, IRFR9110 IRFU9120, IRFR9120 IRFR9220, IRFU9220 RFD8P06E, RFD8P06ESM, RFP8P06E RFD15P05, 100V 60A Mosfet 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode | |
C81 diodeContextual Info: CMLDM8120 CMLDM8120G* SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS |
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CMLDM8120 CMLDM8120G* CMLDM8120: OT-563 C81 diode | |
Contextual Info: CMLDM8120 CMLDM8120G* SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS |
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CMLDM8120 CMLDM8120G* CMLDM8120: OT-563 | |
Contextual Info: CMLDM8120 CMLDM8120G* SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS |
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CMLDM8120 CMLDM8120G* CMLDM8120: OT-563 Dr2011) | |
MARKING 3C7
Abstract: CMLDM3757 TH430 CMLDM375
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CMLDM3757 OT-563 350mW 200mA 500mA 540mA, MARKING 3C7 CMLDM3757 TH430 CMLDM375 | |
8C7 marking
Abstract: CMLDM7484 8C7 SOT
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CMLDM7484 OT-563 350mW 100mA 8C7 marking CMLDM7484 8C7 SOT | |
CMLDM3757Contextual Info: CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary silicon N-Channel and P-Channel enhancement-mode MOSFETs designed |
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CMLDM3757 OT-563 350mW 28-January CMLDM3757 | |
Contextual Info: CMLDM7585 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for |
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CMLDM7585 OT-563 350mW s200mA, 28-January | |
Contextual Info: CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for |
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CMRDM3575 OT-963 125mA 100mA 200mA 12-December | |
Contextual Info: CMLDM7585 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for |
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CMLDM7585 OT-563 200mA 500mA 400mA | |
marking code ct
Abstract: 50s MARKING CODE
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CMRDM3575 OT-963 125mW 200mA marking code ct 50s MARKING CODE | |
Contextual Info: CMLDM3757 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for |
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CMLDM3757 OT-563 350mW 500mA 200mA 540mA, 215mA, | |
N-Channel and P-ChannelContextual Info: CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for |
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CMLDM3757 OT-563 350mW N-Channel and P-Channel | |
Contextual Info: CMLDM7585 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for |
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CMLDM7585 OT-563 350mW OT-563 200mA, | |
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Contextual Info: CMLDM7484 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7484 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for |
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CMLDM7484 OT-563 350mW 100mA | |
Contextual Info: CTLDM7181-M832D SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7181-M832D is a Dual complementary N-Channel and P-Channel Enhancement-mode |
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CTLDM7181-M832D CTLDM7181-M832D TLM832D 950mA, | |
MARKING CFK
Abstract: marking code CFK code cfk TLM832D
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CTLDM7181-M832D CTLDM7181-M832D TLM832D 950mA, 17-February MARKING CFK marking code CFK code cfk | |
Contextual Info: CMLDM7484 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7484 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for |
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CMLDM7484 OT-563 350mW 100mA 28-January | |
FR4 epoxyContextual Info: CMLDM7585 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for |
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CMLDM7585 OT-563 200mA 500mA 400mA FR4 epoxy | |
Contextual Info: æ I \ I / I " A dvanced 1 ^ L in e a r ALD1t 03 D e v ic e s , In c. DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These |
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ALD1103 ALD1101 ALD1102 DGG32c ALD1103) 025b063 00Q33Q | |
8C7 marking
Abstract: CMLDM7484
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CMLDM7484 OT-563 350mW OT-50mm2 28-July 100mA 8C7 marking CMLDM7484 | |
MARKING 3C7
Abstract: CMLDM3757
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CMLDM3757 OT-563 350mW 500mA 200mA 540mA, 215mA, MARKING 3C7 CMLDM3757 | |
Contextual Info: CMLDM7585 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for |
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CMLDM7585 OT-563 350mW 200mA 500mA 400mA | |
8C7 marking
Abstract: CMLDM7484 8C7 SOT
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CMLDM7484 OT-563 350mW 27-January 100mA 8C7 marking CMLDM7484 8C7 SOT |