p-CHANNEL POWER MOSFET 600v
Abstract: IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P
Text: NEW PRO D U CT B RIEF Introducing P-Channel Power MOSFETs next generation p-channel power mosfets -50v to -600v SEPTEMBER 2008 OVERVIEW IXYS has reinforced its P-Channel Power MOSFET portfolio with the introduction of two advanced new families; TrenchPTM and PolarPTM. These families take
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-600v
-150V
p-CHANNEL POWER MOSFET 600v
IXTH20P50P
IXTP28P065T
014 IR MOSFET Transistor
P channel MOSFET 10A
ixtq
IXTA36P15P
IXTA76P10T
IXTH16P60P
IXTK32P60P
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2SJ series
Abstract: TO252 TO-252 2sk2981 2SK3113 equivalent 2SK2414-Z 2sk2414 2sk2415 2SK1282 2Sj325
Text: N & P CHANNEL POWER MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 2A TO 30A IN A 20W PACKAGE • LOW AND HIGH VOLTAGE VERSIONS, UP TO 600V UP TO 100V N & P CHANNEL MOSFETS The latest comprehensive data to fully support these parts is readily available.
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2SK2981-Z
2SK2982-Z
2SK1282-Z
2SK2415-Z
2SK2414-Z
2SK1284-Z
2SJ324-Z
2SJ325-Z
2SJ326-Z
2SJ327-Z
2SJ series
TO252
TO-252
2sk2981
2SK3113 equivalent
2sk2414
2sk2415
2SK1282
2Sj325
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circuit diagram of mosfet based smps power supply
Abstract: FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel
Text: Intelligent Power Switch Integrates Low Current IC and P-Channel MOSFET for Slew Rate Control www.fairchildsemi.com/whats_new/fdc6901l_nph.html The FDC6901L is a one-of-a-kind power switch integrating an advanced Trench technology P-Channel MOSFET with a slew rate controller IC. The
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new/fdc6901l
FDC6901L
FDJ129P
Power247TM,
circuit diagram of mosfet based smps power supply
FSD210 8-pin
6 PIN smps control ic FOR LED DRIVER
SMPS MOSFET
3 phase smps circuit diagram using mosfet
FQP2N60C
1000V P-channel MOSFET
equivalent fsd210
FQPF1N60C
600V 2A MOSFET N-channel
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IR2125 APPLICATION NOTE
Abstract: IR2125 IR2125S transistor tip 33B
Text: Data Sheet No. PD60017-P IR2125 S CURRENT LIMITING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • Fully operational to +500V Tolerant to negative transient voltage dV/dt immune
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PD60017-P
IR2125
16-Lead
MS-001AB)
MS-013AA)
IR2125 APPLICATION NOTE
IR2125S
transistor tip 33B
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60-P Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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6N60-P
O-220F
O-220
6N60-P
O-220F1
O-220F2
O-263
O-251
O-252
QW-R502-969
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY 0257^0^ QGGQflflE 5b3 H A V P blE D A dvanced P o w er Te c h n o l o g y APT55GF60BN P O W E R M O S IV 600V 55A IG B T N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol
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APT55GF60BN
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Untitled
Abstract: No abstract text available
Text: i 77 - / Supertex inc. vn246o New Product N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^DS<ON> b v dgs (max 600V 20 £2 i f BVDss / 0.25A Order Number / Package TO-92 TO-243AA* VN2460N3 VN2460N8 * S a m e as S O T -8 9 P ro du ct S u p p lie d o n 2 0 0 0 p ie ce c a rrie r ta p e reels.
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vn246o
O-243AA*
VN2460N8
VN2460N3
VN2460
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FQB12N60
Abstract: FQI12N60 lS105 mosfet 12A 600V
Text: QFET N-CHANNEL FQB12N60, FQI12N60 FEATURES BV dss = 600V Advanced New Design R D S O N = ° - 7 i2 Avalanche Rugged Technology lD = 10.5A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k
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FQB12N60,
FQI12N60
0-55Q
Dissipation60,
D2PAK/TO-263
PAK/TO-263
FQB12N60
FQI12N60
lS105
mosfet 12A 600V
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FQB7N60
Abstract: FQI7N60 LS74A 74a diode
Text: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BV dss = 600V Advanced New Design R DS ON = 1 Avalanche Rugged Technology In = 7.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 28nC (Typ.)
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FQB7N60,
FQI7N60
DissipatioB7N60,
D2PAK/TO-263
PAK/TO-263
FQB7N60
FQI7N60
LS74A
74a diode
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25OT
Abstract: FQB1N60 FQI1N60 LD1.2A
Text: QFET N-CHANNEL FQB1N60, FQI1N60 FEATURES BV dss = 600V Advanced New Design RdS ON = 11 Avalanche Rugged Technology ln = 1.2A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 5.0nC (Typ.)
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FQB1N60,
FQI1N60
DissipatioB1N60,
D2PAK/TO-263
PAK/TO-263
25OT
FQB1N60
FQI1N60
LD1.2A
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LT 220 diode
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY MIE D • QESTIOS GGOOSIS 7bT M A V P AD VAN CED P O W E R .[ t - 3pi-i s Te c h n o lo g y A P T 6017AFN A P T5 5 1 7 AFN 600V 3 9 .0A 0.17 ijj 550V 3 9 .0 A 0.17 ijj POWER MQS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET%
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APT5517AFN
APT6017AFN
IL-STD-750
LT 220 diode
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN2460 New Product N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BVDSS / ^DS ON ^D(ON) b v dgs (max) (min) TO-92 TO-243AA* 600V 20ß 0.25A VN2460N3 VN2460N8 * S a m e as S O T -89 P ro du ct S u p plied on 2 000 p ie ce c a rrie r ta p e reels.
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VN2460
O-243AA*
VN2460N3
VN2460N8
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FQB3N60
Abstract: FQI3N60
Text: QFET N-CHANNEL FQB3N60, FQI3N60 FEATURES BV dss = 600V Advanced New Design R ds ON = 3.6Î2 Avalanche Rugged Technology lD = 3.0A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 10nC (Typ.)
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FQB3N60,
FQI3N60
D2PAK/TO-263
PAK/TO-263
FQB3N60
FQI3N60
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fqb6n60
Abstract: FQI6N60
Text: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BV dss = 600V Advanced New Design R DS ON = 1 -5 i2 Avalanche Rugged Technology lD = 6.2A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 20nC (Typ.)
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FQB6N60,
FQI6N60
B6N60,
D2PAK/TO-263
PAK/TO-263
fqb6n60
FQI6N60
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FQB2N60
Abstract: FQI2N60
Text: QFET N-CHANNEL FQB2N60, FQI2N60 FEATURES BVdss = 600V Advanced New Design R D S O N = 4 - 7 i2 Avalanche Rugged Technology lD = 2.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 9.0nC (Typ.)
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FQB2N60,
FQI2N60
B2N60,
D2PAK/TO-263
PAK/TO-263
FQB2N60
FQI2N60
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FQB5N60
Abstract: FQI5N60
Text: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BV dss = 600V Advanced New Design R D S O N = 2 0 i 2 Avalanche Rugged Technology lD = 5.0A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 16nC (Typ.)
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FQB5N60,
FQI5N60
B5N60,
D2PAK/TO-263
PAK/TO-263
FQB5N60
FQI5N60
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Untitled
Abstract: No abstract text available
Text: ADVANCED POÜIER TECHNOLOGY □ SSTIGT G000fl7fl 03S « A V P blE D A dvanced P o w er Te c h n o l o g y * APT45GF60BN 600V 45A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol V CES
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G000fl7fl
APT45GF60BN
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Untitled
Abstract: No abstract text available
Text: ADVANCED POlilER TECHNOLOGY b lE D • □ 2 5 7 ' i O ‘î 0000Ô50 TS3 * A V P | R A dvanced F M P o w er M B Te c h n o lo g y 9 APT35GL60BN 600V 35A P O W E R M O S IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR
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APT35GL60BN
APT35GL60BN
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APT601R3KN
Abstract: R6KN APT601R6KN
Text: ADVANCED P OWE R TECHNOLOGY blE D 0557^ 0^ 000071b =10i4 IAVP A dvanced P o w er Te c h n o l o g y APT601R3KN APT601R6KN 600V 6.5A 1.30Q 600V 5.8A 1.60Q POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.
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000071b
APT601R3KN
APT601R6KN
O-220AC
R6KN
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Untitled
Abstract: No abstract text available
Text: A D VA NC ED POIilER TECHNOLOGY b lE □257^0^ D DQDGÔ74 4*i7 *A V P A dvanced P o w er Te c h n o l o g y APT30GF60BN 600V 30A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol
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APT30GF60BN
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APT35GL60BN
Abstract: THYRISTOR 35A 300V
Text: ADVANCED POWER TECHNOLOGY blE 0257^0*! D 0000Ô50 A T53 « A V P d v a n c e d P ow er Technology APT35GL60BN 600V 35A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.
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TECHN0L06Y
APT35GL60BN
THYRISTOR 35A 300V
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y * Q D APT6015JN APT6018JN O S ISOTOP* 600V 600V 38.0A 0.15Í2 35.0A 0.18Q "UL Recognized" File No. E145592 S POWER MOS IVe P ÏÏ= IE ï# T T 51 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol
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APT6015JN
APT6018JN
E145592
6018JN
6015JN
OT-227
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LG 57A
Abstract: APT60M
Text: 'W w/T O D ADVANCED P ow er Te c h n o l o g y ' APT60M90JN 600V 57A 0.090ft $ Û " U L Recognized" File No. E145592 S ISO TO P* POWER MOS IV( SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V All Ratings: T c
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APT60M90JN
090ft
E145592
LG 57A
APT60M
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY blE D Bi QSSTIQT 0000Ô56 244 B A V P • R A d v a n ced F M P o w er Te c h n o l o g y APT75GL60BN 600V 75A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS
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APT75GL60BN
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