AN-994
Abstract: IRFL9110
Text: PD - 90864A IRFL9110 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A Description S Third Generation HEXFETs from International Rectifier
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0864A
IRFL9110
-100V
OT-223
performanc10)
AN-994
IRFL9110
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IRFL9014
Abstract: sot-223 MOSFET AN-994
Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier
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0863A
IRFL9014
OT-223
performanc10)
IRFL9014
sot-223 MOSFET
AN-994
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AN-994
Abstract: IRLL014
Text: PD - 90866A IRLL014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A S Description
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0866A
IRLL014
OT-223
ther10)
AN-994
IRLL014
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AN-994
Abstract: IRFL214 90862A
Text: PD - 90862A IRFL214 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description
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0862A
IRFL214
OT-223
therma10)
AN-994
IRFL214
90862A
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2N7236U
Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U
Text: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry
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PD-91553C
IRFN9140
JANTX2N7236U
JANTXV2N7236U
MIL-PRF-19500/595]
2N7236U
smd 2f
IRFN9140
JANTX2N7236U
JANTXV2N7236U
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IRF P CHANNEL MOSFET 10A 100V
Abstract: 2N7237U P 838 X MOSFET IRFN9240 JANTX2N7237U JANTXV2N7237U smd diode 2F 7A
Text: PD-91554C IRFN9240 JANTX2N7237U JANTXV2N7237U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -200 Volt, 0.51Ω Product Summary Part Number IRFN9240 ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power
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PD-91554C
IRFN9240
JANTX2N7237U
JANTXV2N7237U
MIL-PRF-19500/595]
IRF P CHANNEL MOSFET 10A 100V
2N7237U
P 838 X MOSFET
IRFN9240
JANTX2N7237U
JANTXV2N7237U
smd diode 2F 7A
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IRFP260N
Abstract: IRFP260N applications P 838 X MOSFET
Text: PD - 94004 PROVISIONAL IRFP260N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.04Ω
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IRFP260N
O-247
IRFP260N
IRFP260N applications
P 838 X MOSFET
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Untitled
Abstract: No abstract text available
Text: PD- 93898 PROVISIONAL IRF7451 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRF7451
AN1001)
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P-Channel 200V MOSFET TSOP6
Abstract: No abstract text available
Text: PD- 93795 Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D RDS on = 0.065Ω S T o p V ie w Description These P-channel MOSFETs from International Rectifier
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Si3443DV
OT-23.
P-Channel 200V MOSFET TSOP6
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Si3443DV
Abstract: P-Channel 200V MOSFET TSOP6
Text: PD- 93795A Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω T o p V ie w Description These P-channel MOSFETs from International Rectifier
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3795A
Si3443DV
OT-23.
P-Channel 200V MOSFET TSOP6
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power mosfet so8 FL
Abstract: No abstract text available
Text: PD- 93899 PROVISIONAL IRF7453 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See App. Note AN1001
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IRF7453
AN1001)
power mosfet so8 FL
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IRFB17N50L
Abstract: IRFBL17N50L
Text: PD- 93929 PROVISIONAL IRFBL17N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics
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IRFBL17N50L
Lin252-7105
IRFB17N50L
IRFBL17N50L
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9936 mosfet
Abstract: IRFB18N50K IRFBL18N50K
Text: PD- 93928 PROVISIONAL IRFBL18N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and
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IRFBL18N50K
Dio252-7105
9936 mosfet
IRFB18N50K
IRFBL18N50K
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Untitled
Abstract: No abstract text available
Text: PD- TBD FOR REVIEW ONLY PROVISIONAL IRF7450 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See
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IRF7450
AN1001)
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Untitled
Abstract: No abstract text available
Text: PD- 93843 PROVISIONAL IRF7463 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification Benefits Low Gate Impedance to Reduce Switching Losses l Ultra-Low RDS on at 4.5V VGS l Fully Characterized Capacitance Including
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IRF7463
AN1001)
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AN-994
Abstract: IRLL014
Text: PD - 90866A IRLL014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A S Description
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0866A
IRLL014
OT-223
AN-994
IRLL014
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Untitled
Abstract: No abstract text available
Text: PD- 93840 PROVISIONAL IRF7456 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 20V 0.0065Ω 16A Benefits Ultra-Low RDS(on) at 4.5V VGS l SO-8 Absolute Maximum Ratings Parameter
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IRF7456
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SMPS MOSFET
Abstract: 24V 10A SMPS ic
Text: PD-93892 PROVISIONAL IRF7458 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 30V 0.008Ω 14A Benefits Low Gate Impedance to Reduce Switching Losses l Ultra-Low RDS(on) at 10V VGS
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PD-93892
IRF7458
SMPS MOSFET
24V 10A SMPS ic
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48V SMPS
Abstract: MJ 68A
Text: PD- 94037 PROVISIONAL IRF7473 SMPS MOSFET HEXFET Power MOSFET Applications Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterrutible Power Supply Benefits l Ultra Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved
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IRF7473
48V SMPS
MJ 68A
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10BQ040
Abstract: IRLR8103 IRLR8503 marking JE FET
Text: PD - 93838 PD - 93839 IRLR8103/IRLR8503 IRLR8103/IRLR8503 Provisional Data Sheet • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current
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IRLR8103/IRLR8503
IRLR8103
IRLR8503
10BQ040
marking JE FET
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IRFB17N50L
Abstract: No abstract text available
Text: PD- 93927 PROVISIONAL IRFB17N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics
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IRFB17N50L
O-220AB
De252-7105
IRFB17N50L
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P 838 X MOSFET
Abstract: No abstract text available
Text: Cdlotf WUIVWlC P-Chaimel Enhancement Mode MOSFET General Purpose Amplifier ^ M §mfm \J CORPORATION IT1700 A B S O L U T E M A X IM U M R A T IN G S T a = 2 5 °C u nle ss o th e rw ise s p ecified FEATURES • • • • • Low H ig h Low H ig h Low
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OCR Scan
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IT1700
300ms.
P 838 X MOSFET
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PDF
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P 838 X MOSFET
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET ! FS30UM-06 I % HIGH-SPEED SWITCHING USE FS30UM-06 • 10V DRIVE • VDSS . 60V • rDS ON (MAX) .30mQ • I D . 30A
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FS30UM-06
FS30UM-06
P 838 X MOSFET
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Untitled
Abstract: No abstract text available
Text: I . I PD - 91813 International K » Rectifier i n r i n .M p n A smpsmosfet IRFIB6N60A HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching • High Voltage Isolation = 2.5KVRMS
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IRFIB6N60A
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