NTD18N06
Abstract: NTD30N02
Text: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* ID (A) PD (W) 23.6 32 110 Max Rating Config. Page No. NTD110N02R
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O-252)
NTD25P03L
NTD20P06L
NTD2955
NTD110N02R
NTD95N02R
NTD85N02R
NTD80N02
NTD60N02R
NTD30N02
NTD18N06
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MMSD914LT1
Abstract: 2A 5v ZENER DIODE MMSD914LT electrolytic capacitor 1uF 25v POLY AVX smd inductors .33uH 20A 48V to 12V buck boost converter C-THCR60 nec 2501 MMSD914L EMK212BJ105ZG
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 471 2A, 200KHZ HIGH VOLTAGE BUCK CONVERTER LT3430 DESCRIPTION Demonstration circuit 471 is a 60V, 200kHz, 2A load current, monolithic step-down DC/DC switching converter using the LT3430. With its wide input voltage range, 3A internal power
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200KHZ
LT3430
200kHz,
LT3430.
LT3430
TSSOPFE16
06033A221KAT1A
0603YC223KAT1A
THCR60E2A475ZT
MMSD914LT1
2A 5v ZENER DIODE
MMSD914LT
electrolytic capacitor 1uF 25v POLY AVX
smd inductors .33uH 20A
48V to 12V buck boost converter
C-THCR60
nec 2501
MMSD914L
EMK212BJ105ZG
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SSD50N08-14D
Abstract: MosFET
Text: SSD50N08-14D 55A, 80V, RDS ON 11mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to
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SSD50N08-14D
O-252
O-252
21-Jan-2014
SSD50N08-14D
MosFET
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NTC 10D-9
Abstract: FAN7527 "EI CORE" 10D-9 fan7527 application note transistor 41 74t VARISTOR 7k 471 ntc rt1 varistor 10k 471 10D-9 varistor
Text: www.fairchildsemi.com Application Note AN4107 Design of Power Factor Correction Using FAN7527 1. Introduction power factor is obtained. The FAN7527 is an active power factor correction PFC controller for boost PFC application which operates in the critical conduction mode. It turns on MOSFET when the
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AN4107
FAN7527
FAN7527
NTC 10D-9
"EI CORE"
10D-9
fan7527 application note
transistor 41 74t
VARISTOR 7k 471
ntc rt1
varistor 10k 471
10D-9 varistor
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diode bridge bd1 4a 600V
Abstract: 103 Variable resistor p 471 mosfet 10D09 CM330060 EI2519 EI3026 EI-3530 EI-3026 24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM
Text: www.fairchildsemi.com Application Note AN4121 Design of Power Factor Correction Circuit Using FAN7527B 1. Introduction power factor is obtained. The FAN7527B is an active power factor correction PFC controller for boost PFC application which operates in the
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AN4121
FAN7527B
FAN7527B
diode bridge bd1 4a 600V
103 Variable resistor
p 471 mosfet
10D09
CM330060
EI2519
EI3026
EI-3530
EI-3026
24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM
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0.22UF 275VAC CAPACITOR
Abstract: 24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM NTC 5R1 22uf 450v electrolytic capacitor 103 Variable resistor "EI CORE" EI3026 FAN7527B 12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM EI3530
Text: www.fairchildsemi.com Application Note AN4121 Design of Power Factor Correction Circuit Using FAN7527B 1. Introduction power factor is obtained. The FAN7527B is an active power factor correction PFC controller for boost PFC application which operates in the
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AN4121
FAN7527B
FAN7527B
0.22UF 275VAC CAPACITOR
24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM
NTC 5R1
22uf 450v electrolytic capacitor
103 Variable resistor
"EI CORE"
EI3026
12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM
EI3530
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VJ0805
Abstract: VJ1206 VJ1210 VJ1808 VJ1812 VJ2220 VJ2225 NF223
Text: VJ OMD Series Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitor Solutions for Boardflex Sensitive Applications FEATURES • Open Mode Design OMD reduces risk of shorts or leakage in board flex applications. • Excellent reliability and thermal shock
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2002/95/EC
11-Mar-11
VJ0805
VJ1206
VJ1210
VJ1808
VJ1812
VJ2220
VJ2225
NF223
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vitramon vj series capacitor t dielectric
Abstract: No abstract text available
Text: VJ OMD Series Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitor Solutions for Boardflex Sensitive Applications FEATURES • Open Mode Design OMD reduces risk of shorts or leakage in board flex applications. • Excellent reliability and thermal shock
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2002/95/EC
18-Jul-08
vitramon vj series capacitor t dielectric
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Untitled
Abstract: No abstract text available
Text: SDN520C N-Ch: 4.5 A, 20 V, RDS ON 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DFN2x2-6L DESCRIPTION These miniature surface mount MOSFETs utilize a
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SDN520C
05-Nov-2012
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Untitled
Abstract: No abstract text available
Text: Analog Power AM90N08-10B N-Channel 80-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 80 PRODUCT SUMMARY rDS(on) (mΩ) 11 @ VGS = 10V 13 @ VGS = 4.5V ID(A) 90a Typical Applications:
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AM90N08-10B
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Untitled
Abstract: No abstract text available
Text: VJ OMD Series www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitor Solutions for Boardflex Sensitive Applications FEATURES • Open Mode Design OMD reduces risk of shorts or leakage in board flex applications • Excellent reliability and thermal shock
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VJ OMD Series www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitor Solutions for Boardflex Sensitive Applications FEATURES • Open Mode Design OMD reduces risk of shorts or leakage in board flex applications • Excellent reliability and thermal shock
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRF640a
Abstract: p 471 mosfet
Text: IRF640A A d va n ce d Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV,OSS = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VDS= 200V
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IRF640A
IRF640a
p 471 mosfet
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SSS5N80
Abstract: 250M SSS5N70
Text: N-CHANNEL POWER MOSFETS SSS5N80/70 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSS5N80/70
SSS5N80
SSS5N70
O-220F
250M
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SSS4N60
Abstract: SSS4N55
Text: N-CHANNEL POWER MOSFETS SSS4N60/55 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSS4N60/55
SSS4N60
SSS4N55
to-220f
Tbm42
GD2fl471
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iran
Abstract: SMP40N10 b0606 D5040
Text: T e m ic SiHconix_ SMP40N10 N-Channel Enhancement-Mode Transistor Product Summary V ISR I)SS (V) 100 I d (A) 40 ;r DS(onj (£2) 0.040 TO-22ÜAB o DRAIN connected to TAB o GD S Top View s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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SMP40N10
O-220AB
P-36665â
iran
SMP40N10
b0606
D5040
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irl520
Abstract: p 471 mosfet IRL521 IRL520/IRL521
Text: N-CHANNEL LOGIC LEVEL MOSFET IRL520/IRL521 FEATURES • Low er R d s ON • • • • • • Excellent voltage stability Fast switching speeds Rugged polysillcon gate cell structure Lower input capacitance Extended sate operating area Improved high temperature reliability
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IRL520/IRL521
IRL520
IRL521
RL520/IRL521
p 471 mosfet
IRL520/IRL521
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Untitled
Abstract: No abstract text available
Text: HS-2100RH Data Sheet Radiation Hardened High Frequency Half Bridge Driver The Radiation Hardened HS-2100RH is a high frequency, 100V Half Bridge N-Channel MOSFET Driver IC, which is a functional, pin-to-pin replacement for the Harris HIP2500 and the industry standard 2110 types. The low-side and
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HS-2100RH
HS-2100RH
HIP2500
1-800-4-HARRIS
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KTK2312
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK2312 T E C H N IC A L D A T A SILICON N CHANNEL MOSFET HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS FEATURES • 4V Gate Drive. • Low Drain-Source ON Resistance • RDS ON -13mß (Typ.)
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KTK2312
100//A
KTK2312
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U540
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS1UM-16A HIGH-SPEED SWITCHING USE FS1UM-16A OUTLINE DRAWING Dimensions in mm , 4.5 # • V dss . 8 0 0 V 1 2 3 .4) GATE DRAIN SOURCE DRAIN • TDS ON) (MAX) . 1 2 .3 0
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FS1UM-16A
O-220
1CH23
U540
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30N15
Abstract: No abstract text available
Text: RFH30N12 RFH30N15 ¡2 H a r r is N-Channel Enhancem ent-M ode Power Field-E ffect Transistors August 1991 Package Features T O -2 1 8 A C TOP VIEW • 30A, 120V and 150V • rDS on = 0 .0 75 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds
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RFH30N12
RFH30N15
92CS-3
30N15
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irfbf30
Abstract: Diode IOR 10 dc
Text: International S Rectifier PD-9.616A IRFBF30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 900V ^DS on = 3 -7 ^ lD = 3.6A Description DATA SHEETS
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IRFBF30
O-220
T0-220
lrTtQIT13tÃ
irfbf30
Diode IOR 10 dc
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Three-terminal Off-line PWM Switch
Abstract: EST TL431 top200yai TOP214YAI TOP202 transistor top200yai top200y AN-14 topswitch top201yai TOP203YAI
Text: T O P 2 0 0 - 4 / 1 4 TOPSwitch Family POWER Three-terminal Off-line PWM Switch INTEGRATIONS, INC. Product Highlights Low Cost Replacement for Discrete Switchers • 20 to 50 fewer components - cuts cost, increases reliability • Source-connected tab and Controlled MOSFET turn-on
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10VSJ-06 HIGH-SPEED SWITCHING USE FS10VSJ-06 OUTLINE DRAWING Dimensions in mm * -.2 -.4; • 4V DRIVE • Vdss .60V <\| 4 drain • rDS ON (MAX) . 7 0 m Q
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FS10VSJ-06
O-220S
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