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Festo SOOC-TB-M4-2-R25 FIBRE-OPTIC CABLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SOOC-TB-M4-2-R25	Bulk			1	1 $34.22 10 $34.22 100 $34.22 1000 $34.22 10000 $34.22	Buy Now
Festo SOOC-TB-M4-2-R25 (ALTERNATE: 552812) Photoelectric;Fiber-Optic ;Thru Beam ,for SOE4;M4;2m cbl;25mm bnd \| Festo SOOC-TB-M4-2-R25
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SOOC-TB-M4-2-R25 (ALTERNATE: 552812)	Bulk			1	1 $34.91 10 $34.91 100 $34.91 1000 $34.91 10000 $34.91	Get Quote
Festo SOOC-TB-M4-2-R25-S4 (ALTERNATE: 552813) Photoelectric;Fiber-Optic ;Thru Beam ,for SOE4;M4;2m cbl;25mm bnd;40mm sleeve \| Festo SOOC-TB-M4-2-R25-S4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SOOC-TB-M4-2-R25-S4 (ALTERNATE: 552813)	Bulk			1	1 $43.36 10 $43.36 100 $43.36 1000 $43.36 10000 $43.36	Get Quote

TBM42 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b7E D • ?Tbm42 KM41V4000BLL GGlS7fi4 ÔE2 CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41V4000BLL is a high speed CMOS 4,194,304 bit x 1 Dynamic Random Access Memory. Its	OCR Scan	Tbm42 KM41V4000BLL KM41V4000BLL KM41V4000BLL-7 130ns KM41V4000BLL-8 150ns KM41V4000BLL-10 100ns 180ns	PDF
Untitled Abstract: No abstract text available Text: KM29N16000T/R FLASH MEMORY 2M x8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 bit - Data Register : (256 + 8 ) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte	OCR Scan	KM29N16000T/R	PDF
Untitled Abstract: No abstract text available Text: KS16120B Preliminary DSP for Digital Answering phone with ARAM interface INTRODUCTION KS16120B is a digital signal processor IC that implements all the 80-Q FP-1420C functions and hardware interfaces necessary for voice compression, storage and digital telephone answerer.	OCR Scan	KS16120B KS16120B 4M/16M -24dB	PDF
irf9610 samsung Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC bME D • 7^b4142 0Q122bb SBQ « S M G K P-CHANNEL POWER MOSFETS IRF9610/9611 /9612/9613 FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance	OCR Scan	b4142 0Q122bb IRF9610/9611 IRF9610 IRF9611 IRF9612 IRF9613 irf9610 samsung	PDF
Untitled Abstract: No abstract text available Text: KM44C1003DT CMOS DRAM ELECTR O NICS 1 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power	OCR Scan	KM44C1003DT 71b4142 44C1003DT) 7Rb4142	PDF
Untitled Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRFP254 FEATURES • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	IRFP254 FP254	PDF
KM641003A Abstract: KM641003A-12 KM641003A-15 Text: CMOS SRAM KM641003A 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM641003A-12 : 200 mA(Max.) KM641003A-15 : 190 mA(Max.)	OCR Scan	KM641003A KM641003A-12 KM641003A-15 KM641003A-17 KM64t003A-20: KM641003AJ 32-SOJ-400 KM641003AT 32-TSOP2-4QOF KM641003A KM641003A-12 KM641003A-15	PDF