moc3041 application note
Abstract: MOTOROLA MOC3041 moc3041 MOC3042 AN MOC3043 motorola MOC3042 MOC3043 Triac ac motor moc3043 speed control moc3041 application MOC3041 fairchild
Text: MOC3041 MOC3042 MOC3043 GlobalOptoisolator 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output 400 Volts Peak The MOC3041, MOC3042 and MOC3043 devices consist of gallium arsenide infrared emitting diodes optically coupled to a monolithic silicon detector
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MOC3041
MOC3042
MOC3043
MOC3041,
MOC3042
MOC3043
moc3041 application note
MOTOROLA MOC3041
moc3041
MOC3042 AN
MOC3043 motorola
Triac ac motor moc3043 speed control
moc3041 application
MOC3041 fairchild
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fairchild snubberless triac
Abstract: TRIAC FT 12 schematic symbol for metal oxide varistor SURGE IEEE-472 triac phase control triac snubber varistor MOC3052 APPLICATION CIRCUITS POWER TRIAC METAL OXIDE VARISTOR application note on AC MOC3052M
Text: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVERS 600 VOLT PEAK MOC3051-M MOC3052-M PACKAGE SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 1 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) 6 1 DESCRIPTION The MOC3051-M and MOC3052-M consist of a AlGaAs infrared emitting diode optically coupled to a non-zero-crossing silicon
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MOC3051-M
MOC3052-M
MOC3051-M
MOC3052-M
fairchild snubberless triac
TRIAC FT 12
schematic symbol for metal oxide varistor SURGE
IEEE-472
triac phase control
triac snubber varistor
MOC3052 APPLICATION CIRCUITS
POWER TRIAC
METAL OXIDE VARISTOR application note on AC
MOC3052M
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H11DX
Abstract: H11D1 4N38 H11D2 H11D3 H11D4
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
H11D1
4N38
H11D2
H11D3
H11D4
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controlling ic mct2e
Abstract: No abstract text available
Text: MCT2 MCT2E GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The MCT and MCT2E devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Applications • General Purpose Switching Circuits
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MOC223
Abstract: fairchild 1011 opto
Text: Small Outline Optoisolators MOC223 Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density
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MOC223
MOC223
fairchild 1011 opto
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fairchild h11l1
Abstract: H11L1 fairchild H11L1 trigger H11L2 an h11l1 H11L1 fairchild
Text: H11L1 H11L2 GlobalOptoisolator 6-Pin DIP Optoisolators Logic Output The H11L1 and H11L2 have a gallium arsenide IRED optically coupled to a high–speed integrated detector with Schmitt trigger output. Designed for applications requiring electrical isolation, fast response time, noise immunity
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H11L1
H11L2
H11L1
H11L2
fairchild h11l1
fairchild H11L1 trigger
an h11l1
H11L1 fairchild
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IC 1 MCT2E
Abstract: ic MCT2e MCT2E application MCT271 DS300234 MCT2E characteristics MCT2E applications MCT2E-M qt mct2e MCT210
Text: PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 BLACK PACKAGE NO -M SUFFIX WHITE PACKAGE (-M SUFFIX) 6 6 6 6 1 1 1 1 6 6 1 1 DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
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MCT2200
MCT2201
MCT210
MCT2202
MCT271
E90700)
DS300234
IC 1 MCT2E
ic MCT2e
MCT2E application
MCT271
DS300234
MCT2E characteristics
MCT2E applications
MCT2E-M
qt mct2e
MCT210
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MOC8113
Abstract: MOC8111 MOC8112
Text: MOTOROLA Order this document by MOC8111/D SEMICONDUCTOR TECHNICAL DATA MOC8111* [CTR = 20% Min] GlobalOptoisolator MOC8112* 6-Pin DIP Optoisolators Transistor Output No Base Connection [CTR = 50% Min] MOC8113 [CTR = 100% Min] *Motorola Preferred Devices
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MOC8111/D
MOC8111*
MOC8112*
MOC8113
MOC8111,
MOC8112
MOC8113
MOC8111/D*
MOC8111
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schematic symbol for metal oxide varistor SURGE A
Abstract: TRIAC application note snubber IEEE-472
Text: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVERS 600 VOLT PEAK MOC3051-M MOC3052-M PACKAGE SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 1 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) 6 1 DESCRIPTION The MOC3051-M and MOC3052-M consist of a AlGaAs infrared emitting diode optically coupled to a non-zero-crossing silicon
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MOC3051-M
MOC3052-M
MOC3051-M
MOC3052-M
schematic symbol for metal oxide varistor SURGE A
TRIAC application note snubber
IEEE-472
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MOC3083SR2M
Abstract: MOC3081FM MOC3081M
Text: 6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT 800 VOLT PEAK MOC3081M MOC3082M MOC3083M PACKAGE SCHEMATIC ANODE 1 6 MAIN TERM. CATHODE 2 N/C 3 5 NC* ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) DESCRIPTION The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic
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MOC3081M
MOC3082M
MOC3083M
MOC3081M,
MOC3082M
MOC3083M
P01101866
CR/0117
E90700,
MOC3083SR2M
MOC3081FM
MOC3081M
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MOC301X
Abstract: MOC3022M MOC3021M MOC3020M 0.05 uF capacitor
Text: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT 250/400 VOLT PEAK MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M PACKAGE MOC3023M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 4 MAIN TERM. 1 *DO NOT CONNECT (TRIAC SUBSTRATE)
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MOC3010M
MOC3011M
MOC3012M
MOC3020M
MOC3021M
MOC3022M
MOC3023M
MOC301XM
MOC302XM
MOC301X
0.05 uF capacitor
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PLD-6
Abstract: No abstract text available
Text: 4N35 4N36 4N37 GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Current Transfer Ratio — 100% Minimum @ Specified Conditions
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MOC3081M
Abstract: No abstract text available
Text: 6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT 800 VOLT PEAK MOC3081M MOC3082M MOC3083M PACKAGE SCHEMATIC ANODE 1 6 MAIN TERM. CATHODE 2 N/C 3 5 NC* ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) DESCRIPTION The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic
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MOC3081M
MOC3082M
MOC3083M
MOC3081M,
MOC3082M
MOC3083M
MOC3081M
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H11L1M
Abstract: No abstract text available
Text: 6-PIN DIP OPTOISOLATORS LOGIC OUTPUT H11L1M H11L2M H11L3M PACKAGE SCHEMATIC 6 VCC ANODE 1 6 6 CATHODE 2 1 5 GND 1 4 VO 3 6 1 Truth Table DESCRIPTION The H11LXM series has a high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and
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H11L1M
H11L2M
H11L3M
H11LXM
H11L1M
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MOC3051
Abstract: MOC3051 "cross reference" moc3052 cross reference fairchild tape reel moc3052 MOC3052 "cross reference" parallel triacs triac operation MOC3052 APPLICATION CIRCUITS 4N25 zero CROSS MOC3051FM
Text: MOC3051 MOC3052 GlobalOptoisolator 6-Pin DIP Random-Phase Optoisolators Triac Drivers 600 Volts Peak The MOC3051 Series consists of a GaAs infrared LED optically coupled to a non–Zero–crossing silicon bilateral AC switch (triac). The MOC3051 Series
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MOC3051
C215-M
MOC223-M
MOC3011-M
MOC3021-M
MOC3031-M
MOC3041-M
MOC3051-M
MOC3051 "cross reference"
moc3052 cross reference
fairchild tape reel moc3052
MOC3052 "cross reference"
parallel triacs
triac operation
MOC3052 APPLICATION CIRCUITS
4N25 zero CROSS
MOC3051FM
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application notes MOC3062
Abstract: inverse-parallel scr drive circuit moc3061 application note moc3063 application note MOC3061-63 MOC3062M 4n25 application note zero crossing pulse MOC3061 optocoupler MOC 4N35 moc3063sm
Text: MOC3061 MOC3062 MOC3063 GlobalOptoisolator 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output 600 Volts Peak The MOC3061, MOC3062 and MOC3063 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon detectors
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MOC3061,
MOC3062
MOC3063
C215-M
MOC223-M
MOC3011-M
MOC3021-M
MOC3031-M
MOC3041-M
MOC3051-M
application notes MOC3062
inverse-parallel scr drive circuit
moc3061 application note
moc3063 application note
MOC3061-63
MOC3062M
4n25 application note zero crossing pulse
MOC3061 optocoupler
MOC 4N35
moc3063sm
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MCT2
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 BLACK PACKAGE NO -M SUFFIX WHITE PACKAGE (-M SUFFIX) 6 6 1 6 1 6 1 1 6 6 1 1 DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
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MCT2200
MCT2201
MCT210
MCT2202
MCT271
E90700)
MCT2
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MOC5009-M
Abstract: motorola optocoupler moc5007 mocd208m MOC3052M H11AA4M H11G2M MOC8050M
Text: MOC5007 MOC5008 MOC5009 GlobalOptoisolator 6-Pin DIP Optoisolators Logic Output The MOC5007, MOC5008 and MOC5009 have a gallium arsenide IRED optically coupled to a high–speed integrated detector with Schmitt trigger output. Ideal for applications requiring electrical isolation, fast response time,
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MOC5007,
MOC5008
MOC5009
MOC5007
MOC5009
CompuC215-M
MOC223-M
MOC3011-M
MOC3021-M
MOC5009-M
motorola optocoupler moc5007
mocd208m
MOC3052M
H11AA4M
H11G2M
MOC8050M
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SM 686 16V
Abstract: kc3021 KC3010 KC301 KC3009 400v 15A triac KC3023 100Z KC3012 H11AA1
Text: 6798580 OPTEK TECHNOLOGY D U A L - IN - LIN E 86D INC PACKAGE 00043 T - w -m ISO LA T O R S T -4 /- # 7 Below listed optoisolators are available in surface mount design, except part numbers KC3009 through KC3023. ~ Specify suffix SMA low profile or 24B (standard profile).
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KC3009
KC3023.
H11AA1
H11AA2
H11AA3
H11AA4
CNY35
H11C1
H11C2
H11C3
SM 686 16V
kc3021
KC3010
KC301
400v 15A triac
KC3023
100Z
KC3012
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ON3171
Abstract: opto-isolators Optoisolators BS415 BS7002 VDE0884 CT-R-14
Text: Panasonic Optoisolators ON3171 O ptoisolator For isolated signal transmission • Features • High current transfer ratio : CTR >50% U L listed N o. E 79920 • H igh I/O isolation v o lta g e : B S I certified V iso = 500 0 V rms (m in.) • F a st resp o n se :
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ON3171
5000Vrms
VDE0884)
E79920)
BS415
BS7002
CA109151)
ON3171
opto-isolators
Optoisolators
VDE0884
CT-R-14
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MOCD217/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all O utline Optoisolators MOCD217 Transistor Output Low Input Current [C TR = 100% Min] The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a
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MOCD217/D
MOCD217
MOCD217
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C3063
Abstract: c3063 japan SCR 600
Text: MOTOROLA O rder this docum ent by M QC3061/D SEMICONDUCTOR TECHNICAL DATA TO VD E UL CSA SETI ® SEM K O DEMKO NEMKO BABT G lobal O ptoisola to r 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output MOC3061 MOC3062 MOC3063* [IFT = 15 m A Max] [IFT = 10 m A Max]
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QC3061/D
MOC3061
MOC3062
MOC3063*
C3061,
MOC3062
MOC3063
115/240ure
MOC3Q61/D
MOC3061/D
C3063
c3063 japan
SCR 600
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MOCD223/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD223 Darlington Output [C TR = 500% Min] T he M O C D 2 23 de vice co n sists o f tw o g a lliu m a rse nide in fra re d em ittin g d iod es o p tica lly c o u p le d to tw o m o n o lith ic silicon p h o to tra n sisto r d a rlin gton
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MOCD223/D
MOCD223
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triac driver opto moc3021
Abstract: MOC3Q23 Motorola Application Note AN-780A
Text: MOTOROLA O rder this docum ent by M QC3020/D SEMICONDUCTOR TECHNICAL DATA TO VD E UL CSA SETI ® SEM K O DEMKO NEMKO BABT G lobal O ptoisola to r 6-Pin DIP Random-Phase Optoisolators Triac Driver Output MOC3021 MOC3022 MOC3023* [IFT = 15 m A Max] [IFT = 10 m A Max]
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QC3020/D
MOC3021
MOC3022
MOC3023*
MOC3020
MOC3020/D
triac driver opto moc3021
MOC3Q23
Motorola Application Note AN-780A
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