4N35 cny17
Abstract: telefunken s 150 CQY80N 4N25 opto
Text: Vishay Telefunken VISH A Y ▼ Selector Guide Opto Couplers Opto Isolators for Standard Applications 30 07.98 VISH A Y ▼ Vishay Telefunken Opto Isolators for Standard Applications continued 3) Ip = 1mA 07.98 31 Vishay Telefunken Opto Isolators for Standard Applications (continued)
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T1110
CQY80N
CNY17
K3011PG
4N35 cny17
telefunken s 150
4N25 opto
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cny65a
Abstract: Opto Couplers TCDT1101G 4 pin opto couplers CQY80 TCDT1120
Text: V IS ^ Y Vishay Telefunken Selector Guide Opto Couplers Opto Couplers for Standard Applications1^ 03.99 7 Vishay Telefunken V I^ W Y Opto Couplers for Standard Applications continuedj'iVX 3 ip = 1mA 8 03.99 V l^jW Y Vishay Telefunken Opto Couplers for Standard Applications (continued)1^
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3021P
K3022P
K3023P
K3011PG
CNY64
CNY64A
CNY64B
CNY65
CNY65A
CNY65B
Opto Couplers
TCDT1101G
4 pin opto couplers
CQY80
TCDT1120
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SF107
Abstract: No abstract text available
Text: Opto Products Semelab Opto-Electronic Components, Modules and Solutions OPTO CHIP DESIGN WAFER PROCESSING A Proven Record The Semelab Group has been a leading provider of high-end, innovative electronic solutions since 1974. A diverse, worldwide customer base benefits from our design innovation, our
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FM36235
M1040
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
A1006
SF107
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Untitled
Abstract: No abstract text available
Text: TXPI 1032 4N48 Solid State Opto-Electronic Medium Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring medium CTR gain at low operating currents and high voltage isolation.
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-65oC
125oC
-55oC
100oC
260oC,
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Untitled
Abstract: No abstract text available
Text: TXPI 1033 4N49 Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation.
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-65oC
125oC
-55oC
100oC
260oC,
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Untitled
Abstract: No abstract text available
Text: TXPI 1031 4N47 Solid State Opto-Electronic Low Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring low CTR gain at low operating currents and high voltage isolation.
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-65oC
125oC
-55oC
100oC
260oC,
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Untitled
Abstract: No abstract text available
Text: TXPI 1042 4N22A Solid State Opto-Electronic Low Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring low CTR gain at low operating currents and high voltage isolation. Low CTR Gain, typically 25 % CTR
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4N22A
-65oC
125oC
-55oC
100oC
260oC,
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Untitled
Abstract: No abstract text available
Text: TXPI 1030 4N24 Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation. High CTR Gain, typically 100 % CTR
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-65oC
125oC
-55oC
100oC
260oC,
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Untitled
Abstract: No abstract text available
Text: TXPI 1043 4N23A Solid State Opto-Electronic Medium Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring medium CTR gain at low operating currents and high voltage isolation. Medium CTR Gain, typically 60 % CTR
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4N23A
-65oC
125oC
-55oC
100oC
260oC,
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Untitled
Abstract: No abstract text available
Text: TXPI 1044 4N24A Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation. High CTR Gain, typically 100 % CTR
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4N24A
-65oC
125oC
-55oC
100oC
260oC,
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Untitled
Abstract: No abstract text available
Text: TXPI 1029 4N23 Solid State Opto-Electronic Medium Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring medium CTR gain at low operating currents and high voltage isolation. Medium CTR Gain, typically 60 % CTR
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-65oC
125oC
-55oC
100oC
260oC,
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PDF
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Untitled
Abstract: No abstract text available
Text: TXPI 1028 4N22 Solid State Opto-Electronic Low Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring low CTR gain at low operating currents and high voltage isolation. Low CTR Gain, typically 25 % CTR
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-65oC
125oC
-55oC
100oC
260oC,
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schrack RT 424012
Abstract: 4 change over relays ELESTA sgr 662 ELESTA sgr 282 PXZ4 8533771001 ELESTA SGR 152 8536691001 SCHRACK RP RELAY 24vdc 314048
Text: RELAY- AND OPTO-COUPLERS RELAY- AND OPTO-COUPLERS MICROSERIES AND PLUGSERIES MICROSERIES MICROSERIES AND PLUGSERIES MICROSERIES AND PLUGSERIES PRODUCT INFORMATION Table of contents Page MICROSERIES - The products of MICROSERIES - Technical data / ordering data MICRORELAY
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0D22EI-307449!
5631520000/05/2002/BKD/Bö
schrack RT 424012
4 change over relays
ELESTA sgr 662
ELESTA sgr 282
PXZ4
8533771001
ELESTA SGR 152
8536691001
SCHRACK RP RELAY 24vdc
314048
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PDF
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Untitled
Abstract: No abstract text available
Text: Détecteurs opto-électroniques. Fibres optiques et amplificateurs pour fibres optiques. Précis, quelle que soit votre application. Edition 2014 Les détecteurs opto-électroniques Baumer allient des technologies éprouvées et des innovations ambitieuses.
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CH-8501
0x/12
11xxxxxx
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4n25
Abstract: 4n35 597-289 4n25 an DIODE 0536 W4N35 4n32
Text: Issued November 1992 F14481 4N series opto-isolators RS stock nos. 597-289, 597-295, 597-302 A range of industry standard general purpose opto-isolators. The 4N25 and 35 consist of a gallium arsenide infra-red emitting diode coupled to an NPN silicon photo-transistor. The 4N32 device consists of a gallium
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F14481
2500Vdc
4n25
4n35
597-289
4n25 an
DIODE 0536
W4N35
4n32
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shockley diode
Abstract: diode shockley shockley diode application optotriac C18156 shockley Optocoupler with triac circuits microwave oven microcontroller Four Layer diode Shockley Diode optotriac IL4218
Text: VISHAY Vishay Semiconductors AppNote Triac Coupler Introduction Vishay has a wide range of OPTO-TRIACs which span the gamut in terms of performance, features, and cost. Also, in addition to OPTO-TRIACs, Vishay offers unidirectional AC switches in the form of the
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H11C4
H11C5
H11C6
IL400
24-Nov-03
shockley diode
diode shockley
shockley diode application
optotriac
C18156
shockley
Optocoupler with triac circuits
microwave oven microcontroller
Four Layer diode Shockley Diode
optotriac IL4218
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA l - b? {DISCRETE/OPTO} dFI^CHTESO 9Q97250 TOSHIBA DISCRETE/OPTO - ; - - 0QCH2ÖL, 1 |~ 67C 09266 -Silicon Epitaxial Planar Type _ Diode D7*03 »0^ 1 N91 6,1 N91 6A, 1N916B TENTATIVE Unit In nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
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9Q97250
1N916B
1N916
1N916A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} iï b7 dÊT^O^SSO DODiañ? D | ~ 9097250 TOSHIBA PI SCRETE/OPTO _ 67C 09287 1N4148 • ' ù 4! Dt Silicon Epitaxial P lan ar Type Diode U n i t In m m HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. F EATURES: . Low Forward Voltage
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1N4148
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diode 1n4148
Abstract: 1N4148 TOSHIBA 1N4148 TOSHIBA "ULTRA HIGH SPEED" DIODE 9097250 TOSHIBA 1n4148 mark H TOSHIBA 1N4148 TOSHIBA 9097250
Text: TOSHIBA {DISCRETE/OPTO} il 9097250 TOSHIBA b7 D I S C R E T E /OPTO 1N4148 D eT I ^ O ^ S S O DODiañ? D | ~ . ', 67C 092871 Dt Silicon E p itax ia l P la n a r Type Diode Unit in mm HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES: . Low Forward Voltage
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1N4148
E13EC
-1N4148
diode 1n4148
1N4148 TOSHIBA
1N4148
TOSHIBA "ULTRA HIGH SPEED" DIODE
9097250 TOSHIBA
1n4148 mark H
TOSHIBA 1N4148
TOSHIBA 9097250
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PDF
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1N91 diode
Abstract: No abstract text available
Text: TOSHIBA { DI SC RE TE/OPTO} t/7 9097250 T O S H IBA DISCRETE/OPTO 1N91 4,1 N91 4A, 1N914B De I ^ O T O S D . ^ OODTSflS 7 . 67C 09285 D o Silicon Epitaxial- Planar T y p e Diode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
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1N914B
1N914
1N914A
100mA
1N91 diode
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PDF
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transistor tl 4311
Abstract: 4N49BU 4N49 opto transistor c3 x1 3001 4N48U JANTXV 4N48BU 4N47BU 4N49 JANTX 4N49 JANTXJANTXV 4N49U
Text: INCH-POUND MIL-PRF-19500/548G w/AMENDMENT 1 7 September 2010 SUPERSEDING MIL-PRF-19500/548G 22 July 2009 PERFORMANCE SPECIFICATION SHEET COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE, TYPES 4N47, 4N48, 4N49, 4N47A, 4N48A, 4N49A, 4N47U, 4N48U, 4N49U,
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MIL-PRF-19500/548G
4N47A,
4N48A,
4N49A,
4N47U,
4N48U,
4N49U,
4N47BU,
4N48BU,
transistor tl 4311
4N49BU
4N49 opto
transistor c3 x1 3001
4N48U JANTXV
4N48BU
4N47BU
4N49 JANTX
4N49 JANTXJANTXV
4N49U
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4N24 opto
Abstract: 3041 OPTO 4N24 transistor tl 4311 4N22 4n23 4N22A 4N22U 4N23A 4N23U
Text: INCH-POUND MIL-PRF-19500/486G w/AMENDMENT 1 3 September 2010 SUPERSEDING MIL-PRF-19500/486F 22 July 2009 PERFORMANCE SPECIFICATION SHEET COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE, TYPES 4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A, 4N22U, 4N23U, AND 4N24U,
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MIL-PRF-19500/486G
MIL-PRF-19500/486F
4N22A,
4N23A,
4N24A,
4N22U,
4N23U,
4N24U,
MIL-PRF-19500.
4N24 opto
3041 OPTO
4N24
transistor tl 4311
4N22
4n23
4N22A
4N22U
4N23A
4N23U
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PDF
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K1150PG
Abstract: K1150Pg Opto Coupler opto coupler 4n35 datasheet Opto Coupler 4N33 darlington opto coupler opto coupler 4n35 purpose of opto coupler 4n35 4 channel triac opto x1 transistor K1150P
Text: Vishay Semiconductors Classification Chart for Opto Couplers General purpose 4N27/28 CTR>10% Standard 4N25/26 CTR>20% Transistor output 4N35–37 CTR>100% 6 Pin-Series Base n.c. TCDT1110 Transistor output CTR>50% High CTR 4N32/33 Darlington output CTR>500%
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4N27/28
4N25/26
TCDT1110
4N32/33
CNY74
MCT6H/62H
K827PH
K825P
K824P
K845P
K1150PG
K1150Pg Opto Coupler
opto coupler 4n35 datasheet
Opto Coupler 4N33
darlington opto coupler
opto coupler 4n35
purpose of opto coupler 4n35
4 channel triac opto
x1 transistor
K1150P
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PDF
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Untitled
Abstract: No abstract text available
Text: 4N29 4N30 4N31 ÛUALITY TECHNOLOGIES CORP S7E ]> 4N32 4N33 T m4 • Ö TY s a OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in-line DIL envelope.
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E90700
0110B
AC/450
57804/VDE
86/HD
195S4
74bbfl51
OT212.
74bbflSl
0DD4fl03
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PDF
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