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    OPTIMOS TRANSISTOR Search Results

    OPTIMOS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SB1115(0)-T1-AY Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SA952-T-A Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SD1000(0)-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SC4000-T-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SA812(0)-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation

    OPTIMOS TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    OPTIMOS

    Abstract: OPTIMOS TRANSISTOR TO220 package infineon 13mOhm bts1205 ANPS062E Application Report mosfet ptc fuel level sensor
    Text: Application Note, V 1.0, August 2001 ANPS062E Product News OptiMOS ✚  state of the art field effect transistor switches offering new features by Christian Arndt Automotive Power Never stop -1- thinking. ANPS062E OptiMOS✚ - temperature sensing MOSFET switch


    Original     		ANPS062E OPTIMOS OPTIMOS TRANSISTOR TO220 package infineon 13mOhm bts1205 ANPS062E Application Report mosfet ptc fuel level sensor PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V BSZ075N08NS5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V BSZ075N08NS5 1Description TSDSON-8FL enlarged source interconnection


    Original     		BSZ075N08NS5 IEC61249-2-21 PDF

    IPP023N10N5

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,100V IPP023N10N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,100V IPP023N10N5 1Description TO-220-3 tab Features


    Original     		IPP023N10N5 O-220-3 IPP023N10N5 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V BSZ110N08NS5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V BSZ110N08NS5 1Description TSDSON-8FL enlarged source interconnection


    Original     		BSZ110N08NS5 IEC61249-2-21 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V IPP020N08N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V IPP020N08N5 1Description TO-220-3 tab Features


    Original     		IPP020N08N5 O-220-3 IEC61249-2-21 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,100V IPB020N10N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,100V IPB020N10N5 1Description D²PAK Features •N-channel,normallevel


    Original     		IPB020N10N5 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,150V IPT059N15N3 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,150V IPT059N15N3 1Description HSOF Features Tab •N-channel,normallevel


    Original     		IPT059N15N3 IEC61249-2-21 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features • Complementary P + N channel · Enhancement mode VDS · Logic level 4.5V rated RDS(on),max · Avalanche rated P N -30 30 V VGS=±10 V 80 57 mW VGS=±4.5 V 130 93 -2.0


    Original     		BSL308C IEC61249-2-21 H6327: PDF

    Untitled

    Abstract: No abstract text available
    Text: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 1200 350 mΩ VGS=±2.5 V 2100 600 -0.53 0.95 • Complementary P + N channel · Enhancement mode VDS · Super Logic level 2.5V rated RDS(on),max


    Original     		BSD235C PG-SOT-363 IEC61249-2-21 H6327: PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,40V IPA041N04NG DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,40V IPA041N04NG 1Description TO-220-FP Features •OptimizedtechnologyforDC/DCconverters


    Original     		IPA041N04N O-220-FP IEC61249-2-21 PDF

    BSD235C

    Abstract: marking GS4 sot D053 BSD235 BSD235C H6327
    Text: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 1200 350 mΩ VGS=±2.5 V 2100 600 -0.53 0.95 • Complementary P + N channel · Enhancement mode VDS · Super Logic level 2.5V rated RDS(on),max


    Original     		BSD235C IEC61249-2-21 PG-SOT-363 H6327: BSD235C marking GS4 sot D053 BSD235 BSD235C H6327 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V IPB017N08N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V IPB017N08N5 1Description D²PAK Features •Idealforhighfrequencyswitchingandsync.rec.


    Original     		IPB017N08N5 IEC61249-2-21 PDF

    F-053

    Abstract: PG-SOT-363 BSD235C L6327
    Text: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 1200 350 mW VGS=±2.5 V 2100 600 -0.53 0.95 • Complementary P + N channel · Enhancement mode VDS · Super Logic level 2.5V rated RDS(on),max


    Original     		BSD235C IEC61249-2-21 PG-SOT-363 L6327: F-053 PG-SOT-363 BSD235C L6327 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 1200 350 mΩ V GS=±2.5 V 2100 600 -0.53 0.95 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)


    Original     		BSD235C IEC61249-2-21 PG-SOT-363 L6327: PDF

    d51 av

    Abstract: No abstract text available
    Text: BSZ15DC02KD H OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 150 55 mW VGS=±2.5 V 310 95 -3.2 5.1 • Complementary P + N channel · Enhancement mode VDS · Super Logic level 2.5V rated RDS(on),max


    Original     		BSZ15DC02KD IEC61246-21 15DC02KD d51 av PDF

    BSL215C

    Abstract: HLG09283 L6327
    Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)


    Original     		BSL215C L6327: BSL215C HLG09283 L6327 PDF

    BSL215C

    Abstract: HLG09283 L6327
    Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)


    Original     		BSL215C L6327: BSL215C HLG09283 L6327 PDF

    BSL215C

    Abstract: No abstract text available
    Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 150 140 mW VGS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel VDS · Enhancement mode RDS on ,max · Super Logic level (2.5V rated) · Avalanche rated


    Original     		BSL215C IEC61249-2-21 H6327: BSL215C PDF

    BSL316C

    Abstract: HLG09283 L6327
    Text: BSL316C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features • Complementary P + N channel P N -30 30 V V GS=±10 V 150 160 mΩ V GS=±4.5 V 270 280 -1.5 1.4 V DS · Enhancement mode R DS on ,max · Logic level (4.5V rated) · Avalanche rated


    Original     		BSL316C L6327: BSL316C HLG09283 L6327 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSL316C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -30 30 V VGS=±10 V 150 160 mW VGS=±4.5 V 270 280 -1.5 1.4 • Complementary P + N channel VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated


    Original     		BSL316C IEC61249-2-21 H6327: PDF

    Untitled

    Abstract: No abstract text available
    Text: BSL316C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -30 30 V VGS=±10 V 150 160 mW VGS=±4.5 V 270 280 -1.5 1.4 • Complementary P + N channel VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated


    Original     		BSL316C IEC61249-2-21 H6327: PDF

    BSD235C

    Abstract: L6327 BSD235 F-053
    Text: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features • Complementary P + N channel P N -20 20 V V GS=±4.5 V 1200 350 mΩ V GS=±2.5 V 2100 600 -0.53 0.95 V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)


    Original     		BSD235C PG-SOT-363 L6327: BSD235C L6327 BSD235 F-053 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 2100 600 mΩ V GS=±2.5 V 1200 350 -0.53 0.95 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)


    Original     		BSD235C PG-SOT363 L6327: PDF

    BSL308C

    Abstract: HLG09283 L6327
    Text: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features P N -30 30 V V GS=±10 V 80 57 mΩ V GS=±4.5 V 130 93 -2.0 2.3 • Complementary P + N channel · Enhancement mode V DS · Logic level 4.5V rated R DS(on),max · Avalanche rated


    Original     		BSL308C L6327: BSL308C HLG09283 L6327 PDF