D053 Search Results

SBG5556REC

Abstract: SBR5556REC SPR5556REC
Contextual Info: A C INTERFACE INC IDE D j| D0533fl3 UDDQa3b 7 | S fa to STANLEY SUPER BRIGHT , LED LAMP ¡¡g g |§ § | RECTAN GLE T Y P E 2 .5 X 5mm T Y P E I SERIES • SELE C T IO N G U ID E COLOR MATERIAL . PART N U M B E R . GaAIAs S B R 5 546REC r 5556REC GaP S P R 5546REC, 5556REC

On semiconductor date Code sot-143

Abstract: 846AB SOT23 A1 TSSOP-8 footprint and soldering sot-23 d056 sot23 8X SOT23-5 318 SOT23 marking L2 sot23 MARKING CODE SOT23-5 HE marking L2 SOT23 6
Contextual Info: PACDN042 Transient Voltage Suppressors and ESD Protectors Product Description The PACDN042/43/44/45/46 family of transient voltage suppressor arrays provide a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge ESD .

18f24k22

Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •

EVAL-AD5933EBZ

Abstract: AD5933 AEL-4313 EVAL-AD5933EB AD5933YRSZ AD5933 rev. c AD5934 1024-POINT fec 34 XTAL-CM309S
Contextual Info: 1 MSPSĂ12࿋ፆੇ ገ࣑ഗࢅྪஏ‫ݴ‬ဆᅏ AD5933 ༬Ⴀ ߁ຎ ੗Պ‫ײ‬๼‫ރރ؜‬ኵघ૤‫ۉ‬უLj๼‫؜‬ೕ୲ፌߛ‫ٳ‬100 kHz ੗Պ‫ײ‬ೕ୲෢௮ࠀీࢅ‫ز‬ႜI2Cথ੨ ೕ୲‫ݴ‬Ր୲ǖ27࿋ <0.1 Hz ፆੇ֪ଉ‫ྷݔ‬ǖ1 kΩ዁10 MΩ

BT153

Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
Contextual Info: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,

pin diagram of PIC18f45k22

Abstract: PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412D Note the following details of the code protection feature on Microchip devices: •

tfk 136

Contextual Info: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY6480D1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480D1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: IBM11M32730B IBM11M32730C 32M x 72 DRAM MODULE Features • 32Mx72 Dual Bank Fast Page Mode DIMM System Performance Benefits: -Buffered inputs (except RAS, Data) -Reduced noise (32 Vss/Vcc Pir|s) -4 Byte Interleave enabled -Buffered PDs • Performance:

thy 266

Abstract: m1435 M1443 M2803 BTR59-800R lg philips inverter M3226 IEC134 BTR59 Gate Turn-Off Thyristors
Contextual Info: PHILIPS INTERNATIONAL SflE D m 7110ÔHb 0D5305Ô TOT H P H I N B T R 5 9 S E R IE S FAST GATE TURN-OFF THYRISTORS Thyristors in SOT-93 envelopes which are capable o f being turned both on and o ff via the gate and may be used w ith gate-assisted tu rn -o ff in anode-commutated circuits. They are suitable fo r use in

ADM6384

Abstract: ADM6384YKS23D3Z-R7 ADM6384YKS26D3Z-R7 ADM6384YKS29D1Z-R7 ADM6384YKS29D3Z-R7 ADM6384YKS31D1Z-R7 SC82
Contextual Info: Microprocessor Supervisory Circuit in 4-Lead SC70 ADM6384 FEATURES FUNCTIONAL BLOCK DIAGRAMS ADM6384 VCC RESET GENERATOR VREF MR RESET GND DEBOUNCE 05305-001 Precision power supply monitoring 31 reset threshold options: 1.58 V to 5.0 V Four reset timeouts: 1 ms, 20 ms, 140 ms, and 1120 ms

AD5933

Abstract: circuit diagram blood analyzer AD5934 ADuC702x 1024-POINT sweep generator max 038 05325 capacitive proximity sensor
Contextual Info: 250 kSPS, 12-Bit Impedance Converter, Network Analyzer AD5934 FEATURES GENERAL DESCRIPTION Programmable output peak-to-peak excitation voltage to a max frequency of 100 kHz Programmable frequency sweep capability with serial I2C interface Frequency resolution of 27 bits <0.1 Hz

INTEL 845 MOTHERBOARD CIRCUIT diagram

Abstract: 1N4148 ADP3120A ADP3188 intel 845 MOTHERBOARD pcb CIRCUIT diagram SUPPLY-ADP3190A 228nF
Contextual Info: 6-Bit, Programmable 2-/3-/4-Phase, Synchronous Buck Controller ADP3190 FEATURES Selectable 2-, 3-, or 4-phase operation at up to 1 MHz per phase ±9.5 mV worst-case differential sensing error over temperature Logic-level PWM outputs for interface to external

TDS714L

Abstract: modulator 26MHz AD8302 spur spur free fractional PLL pong VCO190-1843T ADF4193 DCS1800 GSM900 TRANSISTOR SDM M6
Contextual Info: Low Phase Noise, Fast Settling PLL Frequency Synthesizer ADF4193 FEATURES GENERAL DESCRIPTION New, fast settling, fractional-N PLL architecture Single PLL replaces ping-pong synthesizers Frequency hop across GSM band in 5 s with phase settled by 20 μs 0.5° rms phase error at 2 GHz RF output

D018

Abstract: D019 D032
Contextual Info: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.

Intel 1103 DRAM

Abstract: D03B intel 1103 ram D018 D019 D032
Contextual Info: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

D018

Abstract: D019 D032 D051 THMY51E10B70
Contextual Info: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY6480F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7280D1EG-80H TENTATIVE T O SH IB A H YBRID D IG ITA L IN TEG R A T ED CIRCU IT 8,388,608-W ORD BY 72-BIT SYNCHRONOUS DRAM M O DULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

PM7628

Contextual Info: PM-7628/883 DUAL 8-BIT BUFFERED MULTIPLYING CMOS D/A CONVERTER Pre cisio n M o n o li th ic '' Inc. 1.0 SCOPE 1.1 Scope. This specification covers the detail requirements for a monolithic dual 8-bit digital-toanalog converter with on-chip latches for each DAC to allow easy microprocessor interface.

Contextual Info: T O S H IB A THLY6416G1 FG-80,-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.

PCIe cable pinout

Contextual Info: PI3PCIE2612-B High Bandwidth, 6-Differential Channel 1:2 DP/PCIe Gen2 Display Mux, BTX Pinout Features Description • 6 Differential Channel, 1 to 2 demux that will support 5.0Gbps PCIexpress Gen2 signals on one path, and DP 1.1 signals on the second path