OPTICAL DETECTORS 500 NM Search Results

edfa pump laser

Contextual Info: SD 048-11-21-000 Pump Laser Monitor Photodiode The SD 0480-11-21-000 Pump Laser Monitor Photodiode was designed to monitor the optical power of short wavelength 500 to 1000 nm semiconductor lasers, such as the 980 nm EDFA pump laser. These OEM detectors are supplied as bare die soldered to a ceramic block, which facilitates

A New Detector for IR LED Light

Abstract: Silicon Detector OSD5-5T GaAlAs detector IR photodiode 880 nm 850 nm LED RG830 Longwave laser ingaas LED IR photodiode 95w
Contextual Info: A NEW DETECTOR FOR IRLED LIGHT As reprinted from SENSORS Magazine, December 1996 Issue A New Detector for IR LED Light A new GaAIAs processing technique has led to a wavelength-specific detector for 880 nm light that requires no signal modulation or optical filtering to eliminate

HSDL-4400

Abstract: HSDL-4420 HSDL-54XX 9018E HSDL4420 HSDL-44XX HSDL-5400 HSDL-5420 54XX
Contextual Info: H High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44XX IR Emitter Series HSDL-54XX IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs

HSDL-4420#011

Contextual Info: High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs

9018E

Abstract: EN60825-1 HSDL-4400 HSDL4420 HSDL-4420 HSDL-44XX HSDL-5400 HSDL-5420 HSDL-54XX Hewlett-Packard LED transparent substrate 1996
Contextual Info: 1 H High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44XX IR Emitter Series HSDL-54XX IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs

HSDL4420

Abstract: HSDL-4400 HSDL-4420
Contextual Info: 1 High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs

InGaAs APD photodiode 1550

Abstract: InGaas PIN photodiode, 1550 inGaAs photodiode 1550 InGaAs apd photodiode InGaAs pin
Contextual Info: PDINBU 45 UM DETECTORS 1100nm to 1650 nm InGaAs PIN Photodiodes PDINBU045G00A-0-0-01 PD-LD offers InGaAs PIN photodiodes with a 45 micron diameter active area that are ideal for use in Channel Monitoring Applications. The detectors exhibit their intrinsically high optical responsivity

HSDL-44XX

Abstract: 44xx
Contextual Info: High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs

HSDL-5400

Abstract: HSDL5420 HSDL-5420 HSDL5400
Contextual Info: High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs

HSDL-5400

Abstract: EN60825-1 HSDL-4400 HSDL4420 HSDL-4420 HSDL-44XX HSDL-5420 diode blue stripe
Contextual Info: High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs

EPITAXX

Abstract: EPITAXX ETX 300 ETX500T ETX3000T5 InGaAs Epitaxx linear 3000T5 ETX2000T5 InGaAs 1550 photodiode transimpedance amplifier EPITAXX ETX 75 inGaAs photodiode 1550
Contextual Info: =ss ETX 5001V ETX 1000T ETX 2000T5, ETX 3000T5 ERl iAAA Large Area InGaAs Photodiodes Features • High responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical

ETX2000T5

Abstract: ETX3000T5 ETX500T EPITAXX ETX 300 InGaas PIN photodiode, 1550 sensitivity noise diode LARGE SURFACE AREA PHOTODIODE photodiode high responsivity high shunt resistance 1550 epitaxx InGaAs Epitaxx
Contextual Info: E TX 500T, ET X 100 0 T ERi iMAA ETX 2 0 0 0 T 5 , ET X 300 0 T5 m m « Large Area InGaAs Photodiodes Features • Hiqh responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical

BaySpec

Abstract: wdm Mux edfa optical gain 20 dB 2X512
Contextual Info: Enlightening Fiber Optic Networks IntelliGuardTM C and L-Band Optical Channel Performance Monitors Parameters Unit Specifications nm 1528 - 1570 C-Band and 1570 - 1605 (L-Band) GHz 160 50 pm dB ± 15 60 Channel Input Power Range Channel Power Accuracy Channel Power Repeatability

J16D

Abstract: J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM
Contextual Info: E G I 8c G JUDSON 3TE D • 30BGb05 000DE13 4 *JUD ^ T -V /-V / J IO Series Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.

SDL-4420

Contextual Info: Thp\ mHEM HEWLETT PACKARD High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package Technical Data Features • Subm iniature Flat Top and D om e Package Size - 2x2 iran • IR E m itter 875 nm TS AIGaAs Intensity -1 7 mW/sr Speed - 40 ns

Contextual Info: DATASHEET Photon Detection C30902 and C30921 Series High-speed solid state detectors for low light level applications Key Features • High quantum efficiency: 77% typical at 830 nm  C30902SH and C30921SH can be operated in Geiger mode  C30902EH/SH-2 version with

SAE230VS

Contextual Info: Detectors Silicon Avalanche Photodiode SAE-Series Red-Enhanced Description The SAE230VS and SAE500VS epitaxial avalanche photodiodes are general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity at 650 nm is ideally suited to

Contextual Info: Detectors Silicon Avalanche Photodiode SAE-Series NIR-Enhanced Description The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range. The responsivity is optimised for 900 nm for use

hte 2642

Abstract: HTE-2642 C30642E ESILICON PerkinElmer Optoelectronics AQAP-1 near IR photodiodes pin Photodiode 1550 nm C30619 C30641
Contextual Info: Description The PerkinElmer family of large-area InGaAs PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications Large-Area InGaAs Photodiodes C30619, C30641, C30642, C30665 EVERYTHING IN A including optical power meters, fiber optic test

PIN-5DI

Abstract: PIN-020A PIN-3CDI UDT Pin-040A PIN-10DI PIN-6DI PIN-13DI FIL-3C diodes 10di 13DI
Contextual Info: PHOTOCONDUCTIVE SERIES PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS • • • • • • The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such

bpx65rt

Abstract: centronic osd100 6 deep uv photodiode, GaP Centronic osd 15 AX65-RF X65EB blue enhanced photodiode array MD25 Silicon Photodetector Centronic osd 50 1064nm photodiode
Contextual Info: RESPO N SIVITY A/W Photodiode Response Curves 200 300 400 500 600 700 800 900 1000 1100 1200 W AVELENG TH(nm ) CEnmomc ] 2 Tel: 01689 842121 Fax: 01689 845117 Making the Right Choice (•■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■a

ON SEMICONDUCTOR 613

Abstract: top marking 293 1A466
Contextual Info: PRODUCT INFORMATION 1A466 Datacom, General Purpose O p t ic a l a n d E le c t r ic a l C h a r a c t e r is t ic s 500 /p=30mA Note 1 700 |j W 50 deg (3 d B e l) /c 200 MHz Peak Wavelength XP 640 650 660 II o nm II Bandwidth Full W idth H alf M axim um I

SF107

Contextual Info: Opto Products Semelab Opto-Electronic Components, Modules and Solutions OPTO CHIP DESIGN WAFER PROCESSING A Proven Record The Semelab Group has been a leading provider of high-end, innovative electronic solutions since 1974. A diverse, worldwide customer base benefits from our design innovation, our

gold detectors circuit

Abstract: PDF PIN PHOTO DIODE DESCRIPTION detector alcohol OP58TS The Optical Devices
Contextual Info: Spec. No. : ODT-W010-82 0 Issued Date : 2004.09.20 SPECIFICATION MODEL NAME : Photo Diode MODEL NO. : OP58TS Prepared by : Checked by : Approved by : ODTech Head office : 814, Youngam-ri, Bongdong-eup, Wanju-gun, Jeonbok-do, Korea Tel : 82-63-263-7626, Fax : 82-63-262-7624